Effects of residual stress on the properties of relaxer ferroelectric thin films prepared by CSD method on Si
| Project/Area Number |
16H07400
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| Research Category |
Grant-in-Aid for Research Activity Start-up
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| Allocation Type | Single-year Grants |
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| Research Field |
Inorganic materials/Physical properties
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| Research Institution | Numazu National College of Technology |
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Principal Investigator |
Arai Takashi 沼津工業高等専門学校, 物質工学科, 助教 (80781244)
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| Project Period (FY) |
2016-08-26 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2017: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2016: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
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| Keywords | PMN-PT / 薄膜 / 溶液合成 / 応力制御 / 誘電体 / 強誘電体膜 / 機能性セラミックス |
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| Outline of Final Research Achievements |
LaNiO3(LNO) with 200 nm thickness was deposited on a Si substrate as orientation control and electrode layer, and (La,Sr)CoO3(LSCO) with various thickness was introduced on the structure as a residual stress control layer. As a result, as increasing the number of laminated layers of LSCO from 0 to 8, both the remnant polarization value and the saturated polarization value of the PMN-PT thin films were enhanced. on the other hand, there were no changes in ferroelectric properties of PMN-PT thin films when the number of LSCO stacks was 8 and 10 layers. These results mean that, it was found that a polarization value of a PMN-PT thin film does not increase any more when a compressive stress value exceeds a certain limit, or a compressive stress above a certain value is not applied to the PMN-PT thin film.
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Report
(3 results)
Research Products
(4 results)
