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Investigation of the effect of hydrogen on gallium oxide growth by comparison of growth using completely non-hydrogen system and hydrogen system

Research Project

Project/Area Number 16K04944
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Research Field Crystal engineering
Research InstitutionSophia University (2018)
Tokyo University of Agriculture and Technology (2016-2017)

Principal Investigator

Togashi Rie  上智大学, 理工学部, 助教 (50444112)

Project Period (FY) 2016-04-01 – 2019-03-31
Project Status Completed (Fiscal Year 2018)
Budget Amount *help
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2018: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2017: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2016: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Keywords結晶工学 / 結晶成長 / エピタキシャル成長 / ハライド気相成長 / 熱力学解析 / 酸化ガリウム / ワイドギャップ半導体 / HVPE法 / β型酸化ガリウム / エピタキシャル
Outline of Final Research Achievements

β-type gallium oxide (β-Ga2O3) is promising as a low cost, high withstand voltage, low loss power device material. In previous work, high-speed and high-purity Ga2O3 growth has been achieved by means of a halide vapor phase epitaxy (HVPE) method using completely non-hydrogen system. On the other hand, in the present field, the existence of hydrogen which was considered to greatly affect the growth reactions in the vapor phase growth and the electrical properties of the grown layers has not been globally verified. Thus, in this work, the homoepitaxial growth of Ga2O3 layers by HVPE using the hydrogen system which was intentionally introduced hydrogen by using water (H2O) as a group VI source was investigated. Furthermore, the effects of hydrogen on growth and physical properties, mechanism elucidation were investigated by comparison with completely non-hydrogen system growth.

Academic Significance and Societal Importance of the Research Achievements

本研究では、熱力学解析結果に基づき、塩素ガスを高純度ガリウムと反応させることで一塩化ガリウムガスを選択的に生成し、VI族源かつ水素源として水を用いる世界で唯一の水素系Ga2O3成長反応装置を構築した。創出した水素導入Ga2O3成長層に加え、これまでに実現した完全非水素系Ga2O3成長結果と比較・検討することで、これまで報告されていないGa2O3成長における水素導入効果を解明することが可能となった。
実験と計算解析の両者の協調により、成長装置の構築、結晶の創出、評価、デバイス応用まで一貫して実施可能な本研究は申請者にしかできない独創的なものであり、学術的かつ社会的意義は非常に大きいと評価できる。

Report

(4 results)
  • 2018 Annual Research Report   Final Research Report ( PDF )
  • 2017 Research-status Report
  • 2016 Research-status Report
  • Research Products

    (14 results)

All 2018 2017 2016 Other

All Int'l Joint Research (3 results) Journal Article (3 results) (of which Int'l Joint Research: 3 results,  Peer Reviewed: 3 results,  Open Access: 2 results,  Acknowledgement Compliant: 2 results) Presentation (8 results) (of which Int'l Joint Research: 4 results)

  • [Int'l Joint Research] IFM, Linkoping University(スウェーデン)

    • Related Report
      2018 Annual Research Report
  • [Int'l Joint Research] IFM, Linkoping University(Sweden)

    • Related Report
      2017 Research-status Report
  • [Int'l Joint Research] IFM, Linkoping University(Sweden)

    • Related Report
      2016 Research-status Report
  • [Journal Article] Comparison of O2 and H2O as oxygen source for homoepitaxial growth of beta-Ga2O3 layers by halide vapor phase epitaxy2018

    • Author(s)
      Keita Konishi, Ken Goto, Rie Togashi, Hisashi Murakami, Masataka Higashiwaki, Akito Kuramata, Shigenobu Yamakoshi, Bo Monemar, Yoshinao Kumagai
    • Journal Title

      Journal of Crystal Growth

      Volume: 492 Pages: 39-44

    • DOI

      10.1016/j.jcrysgro.2018.04.009

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] High rate growth of In2O3 at 1000℃ by halide vapor phase epitaxy2016

    • Author(s)
      R. Togashi, S. Numata, M. Hayashida, T. Suga, K. Goto, A. Kuramata, S. Yamakoshi, P. Paskov, B. Monemar, and Y. Kumagai
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 55 Issue: 12 Pages: 1202B3-1202B3

    • DOI

      10.7567/jjap.55.1202b3

    • Related Report
      2016 Research-status Report
    • Peer Reviewed / Open Access / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] Thermal and chemical stabilities of group-III sesquioxides in a flow of either N2 or H22016

    • Author(s)
      R. Togashi, Y. Kisanuki, K. Goto, H. Murakami, A. Kuramata, S. Yamakoshi, B. Monemar, A. Koukitu, and Y. Kumagai
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 55 Issue: 12 Pages: 1202BE-1202BE

    • DOI

      10.7567/jjap.55.1202be

    • NAID

      210000147274

    • Related Report
      2016 Research-status Report
    • Peer Reviewed / Open Access / Int'l Joint Research / Acknowledgement Compliant
  • [Presentation] Temperature dependence of In2O3 growth on (0001) sapphire by HVPE2017

    • Author(s)
      Takayuki Suga, Shiyu Numata, Rie Togashi, Hisashi Murakami, Bo Monemar, and Yoshinao Kumagai
    • Organizer
      International Conference on Light-Emitting Devices and Their Industrial Applications '17 (LEDIA '17)
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research
  • [Presentation] 異なる酸素源を用いた酸化ガリウムハライド気相成長の比較2017

    • Author(s)
      小西敬太,後藤健,富樫理恵,村上尚,東脇正高,倉又朗人,山腰茂伸,Bo Monemar,熊谷義直
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Related Report
      2017 Research-status Report
  • [Presentation] ハライド気相成長法によるIn2O3成長の温度依存性2017

    • Author(s)
      中畑秀利,須賀隆之,小西敬太,富樫理恵,村上尚,Plamen P. Paskov,Bo Monemar,熊谷義直
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Related Report
      2017 Research-status Report
  • [Presentation] HVPE法を用いたIn2O3成長における成長速度の影響2017

    • Author(s)
      須賀隆之,中畑秀利,小西敬太,富樫理恵,村上尚,Plamen P. Paskov,Bo Monemar,熊谷義直
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Related Report
      2017 Research-status Report
  • [Presentation] Influence of Growth Rate on Halide Vapor Phase Epitaxy of c-In2O3 on c-Plane Sapphire Substrates2017

    • Author(s)
      T. Suga, H. Nakahata, K. Konishi, R. Togashi, H. Murakami, P. P. Paskov, B. Monemar, and Y. Kumagai
    • Organizer
      2nd International Workshop on Ga2O3 and Related Materials (IWGO 2017)
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research
  • [Presentation] Halide Vapor Phase Epitaxy of β-Ga2O3 Homoepitaxial Layers Using O2 and H2O as Oxygen Sources2017

    • Author(s)
      K. Konishi, K. Goto, R. Togashi, H. Murakami, M. Higashiwaki, A. Kuramata, S. Yamakoshi, B. Monemar, and Y. Kumagai
    • Organizer
      2nd International Workshop on Ga2O3 and Related Materials (IWGO 2017)
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research
  • [Presentation] c面sapphire基板上c-In2O3のHVPE成長における成長速度の影響2017

    • Author(s)
      長井研太,須賀隆之,中畑秀利,小西敬太,富樫理恵,村上尚,Plamen P. Paskov,Bo Monemar,熊谷義直
    • Organizer
      応用物理学会結晶工学分科会第6回結晶工学未来塾
    • Related Report
      2017 Research-status Report
  • [Presentation] Growth of In2O3 by Halide Vapor Phase Epitaxy2016

    • Author(s)
      Shiyu. Numata, Rie Togashi, Ken Goto, Hisashi Murakami, Akito Kuramata, Shigenobu Yamakoshi, and Yoshinao Kumagai
    • Organizer
      The 4th International Conference on Light-Emitting Devices and Their Industrial Applications ’16 (LEDIA ’16)
    • Place of Presentation
      Pacifico Yokohama, Japan
    • Year and Date
      2016-05-19
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research

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Published: 2016-04-21   Modified: 2020-03-30  

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