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High speed growth of high quality, ultra-thick gallium nitride crystal using newly developed source materials

Research Project

Project/Area Number 16K04945
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Research Field Crystal engineering
Research InstitutionTokyo University of Agriculture and Technology

Principal Investigator

Murakami Hisashi  東京農工大学, 工学(系)研究科(研究院), 准教授 (90401455)

Project Period (FY) 2016-04-01 – 2019-03-31
Project Status Completed (Fiscal Year 2018)
Budget Amount *help
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2018: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2017: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2016: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Keywords結晶成長 / 窒化物半導体 / エピタキシャル成長 / 窒化ガリウム / 半導体 / ワイドバンドギャップ / トリハライド気相成長法 / 気相成長 / 基板 / 化合物半導体 / 自立基板 / エピタキシャル / 結晶工学
Outline of Final Research Achievements

Study on high temperature and high speed growth of GaN using newly developed source materials of GaCl3 was performed. We have succeeded in the growth of GaN at over 1300 degree C which has never been reported previously, and grown crystal was high quality that could withstand practical use for devices. Growth rate of GaN by using GaCl3 (achieved in this study) was 2.5-3 times higher than that by conventional method of HVPE. Furthermore, crystalline quality of GaN grown with quite high speed was not degraded because the growth temperature was high. Therefore, technique using newly developed GaCl3 source materials explore the future manufacturing method of GaN bulk crystal.

Academic Significance and Societal Importance of the Research Achievements

本研究成果は、従来法に比べて3倍程度の成長速度を得つつ、結晶品質の優れたGaN単結晶を提供する手法を確立した点において、将来のGaN基板作製コストの低減のほか、その基板上に作製されるGaN系電力変換素子やレーザー等の性能向上にも貢献するものと考える。また、原料生成部の詳細な解析を行い見いだされた知見は、学術的に大きな指針を与え、他の結晶成長に対してもユニバーサルに適用可能なものとなったことから、学術的にも大きな意義をもっていると考える。

Report

(4 results)
  • 2018 Annual Research Report   Final Research Report ( PDF )
  • 2017 Research-status Report
  • 2016 Research-status Report
  • Research Products

    (59 results)

All 2019 2018 2017 2016

All Journal Article (16 results) (of which Int'l Joint Research: 5 results,  Peer Reviewed: 16 results,  Acknowledgement Compliant: 4 results,  Open Access: 1 results) Presentation (43 results) (of which Int'l Joint Research: 20 results,  Invited: 9 results)

  • [Journal Article] Vapor Phase Epitaxy of (133) and (211) CdTe on (211) Si Substrates Using Metallic Cd Source2019

    • Author(s)
      Kenji Iso, Yuya Gokudan, Masumi Shiraishi, Minae Nishikado, Hisashi Murakami, Akinori Koukitu
    • Journal Title

      Journal of Electronic Materials

      Volume: 48 Issue: 1 Pages: 454-459

    • DOI

      10.1007/s11664-018-6728-1

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Dependence of surface morphology at initial growth of CdTe on the II/VI on (211) Si substrates by vapor phase epitaxy using metallic Cd source2019

    • Author(s)
      Iso Kenji, Gokudan Yuya, Shiraishi Masumi, Nishikado Minae, Murakami Hisashi, Koukitu Akinori
    • Journal Title

      Journal of Crystal Growth

      Volume: 506 Pages: 185-189

    • DOI

      10.1016/j.jcrysgro.2018.10.038

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Influence of intermediate layers on thick InGaN growth using tri-halide vapor phase epitaxy2019

    • Author(s)
      Kentaro Ema, Rio Uei, Hisashi Murakami and Akinori Koukitu
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 印刷中

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] GaN growth via tri-halide vapor phase epitaxy using solid source of GaCl3: the investigation of the growth dependence on NH3 and additional Cl22019

    • Author(s)
      Nao Takekawa, Machi Takahashi, Mayuko Kobayashi, Ichiro Kanosue, Hiroyuki Uno, Kikurou Takemoto, and Hisashi Murakami
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 印刷中

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Growth temperatures and the excess chlorine effect of N-Polar GaN growth via tri-halide vapor phase epitaxy2018

    • Author(s)
      Nao Takekawa, Naoto Hayashida, Daisuke Ohzeki, Akira Yamaguchi, Hisashi Murakami, Yoshinao Kumagai, Koh Matsumoto, Akinori Koukitu
    • Journal Title

      Journal of Crystal Growth

      Volume: 502 Pages: 7-13

    • DOI

      10.1016/j.jcrysgro.2018.08.024

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Direct Growth of CdTe on a (211) Si Substrate with Vapor Phase Epitaxy Using a Metallic Cd Source2017

    • Author(s)
      Iso Kenji、Gokudan Yuya、Shiraishi Masumi、Murakami Hisashi、Koukitu Akinori
    • Journal Title

      Journal of Electronic Materials

      Volume: 46 Issue: 10 Pages: 5884-5888

    • DOI

      10.1007/s11664-017-5584-8

    • Related Report
      2017 Research-status Report
    • Peer Reviewed
  • [Journal Article] Crystallization of semi-insulating HVPE-GaN with solid iron as a source of dopants2017

    • Author(s)
      Iwinska M.、Piotrzkowski R.、Litwin-Staszewska E.、Ivanov V. Yu.、Teisseyre H.、Amilusik M.、Lucznik B.、Fijalkowski M.、Sochacki T.、Takekawa N.、Murakami H.、Bockowski M.
    • Journal Title

      Journal of Crystal Growth

      Volume: 475 Pages: 121-126

    • DOI

      10.1016/j.jcrysgro.2017.06.007

    • Related Report
      2017 Research-status Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Crystal growth of HVPE-GaN doped with germanium2017

    • Author(s)
      Iwinska M.、Takekawa N.、Ivanov V.Yu.、Amilusik M.、Kruszewski P.、Piotrzkowski R.、Litwin-Staszewska E.、Lucznik B.、Fijalkowski M.、Sochacki T.、Teisseyre H.、Murakami H.、Bockowski M.
    • Journal Title

      Journal of Crystal Growth

      Volume: 480 Pages: 102-107

    • DOI

      10.1016/j.jcrysgro.2017.10.016

    • Related Report
      2017 Research-status Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Thick nonpolar m -plane and semipolar (10-1 -1) GaN on an ammonothermal seed by tri-halide vapor-phase epitaxy using GaCl32017

    • Author(s)
      Kenji Iso, Karen Mstsuda, Nao Takekawa, Kazuhiro Hikida, Naoto Hayashida, Hisashi Murakami and Akinori Koukit
    • Journal Title

      Journal of Crystal Growth

      Volume: 461 Pages: 25-29

    • DOI

      10.1016/j.jcrysgro.2017.01.005

    • Related Report
      2016 Research-status Report
    • Peer Reviewed
  • [Journal Article] Quasiequilibrium crystal shape and kinetic Wulff plot for GaN grown by trihalide vapor phase epitaxy using GaCl32017

    • Author(s)
      Kenji Iso, Karen Matsuda, Nao Takekawa, Hisashi Murakami ans Akinori Koukitu
    • Journal Title

      Phisica Status Solidi B

      Volume: 254 Issue: 8

    • DOI

      10.1002/pssb.201600679

    • Related Report
      2016 Research-status Report
    • Peer Reviewed / Open Access
  • [Journal Article] Investigation of NH3 input partial pressure for N-polarity InGaN growth on GaN substrates by tri-halide vapor phase epitaxy2016

    • Author(s)
      T. Hirasaki, T. Hasegawa, M. Meguro, Q. T. Thieu, H. Murakami, Y. Kumagai, B. Monemar, A. Koukitu
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 55 Issue: 5S Pages: 05FA01-05FA01

    • DOI

      10.7567/jjap.55.05fa01

    • Related Report
      2016 Research-status Report
    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] Formation mechanism of AlN whiskers on sapphire surfaces heat-treated in a mixed flow of H2 and N22016

    • Author(s)
      Kazuya Takada*, Kazushiro Nomura, Rie Togashi, Hisashi Murakami, Akinori Koukitu, and Yoshinao Kumagai
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 55 Issue: 5S Pages: 05FF01-05FF01

    • DOI

      10.7567/jjap.55.05ff01

    • Related Report
      2016 Research-status Report
    • Peer Reviewed
  • [Journal Article] Influence of high-temperature processing on the surface properties of bulk AlN substrates2016

    • Author(s)
      S. Tojo, R. Yamamoto, R. Tanaka, Q.-T. Thieu, R. Togashi, T. Nagashima, T. Kinoshita, R. Dalmau, R. Schlesser, H. Murakami, R. Collazo, A. Koukitu, B. Monemar, Z. Sitar, Y. Kumagai
    • Journal Title

      Journal of Crystal Growth

      Volume: 446 Pages: 33-38

    • DOI

      10.1016/j.jcrysgro.2016.04.030

    • Related Report
      2016 Research-status Report
    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] Tri-halide vapor phase epitaxy of thick GaN using gaseous GaCl3 precursor2016

    • Author(s)
      Hisashi Murakami*, Nao Takekawa, Anna Shiono, Quang Tu Thieu, Rie Togashi, Yoshinao Kumagai, Koh Matsumoto, Akinori Koukitu
    • Journal Title

      Journal of Crystal Growth

      Volume: 456 Pages: 140-144

    • DOI

      10.1016/j.jcrysgro.2016.08.029

    • Related Report
      2016 Research-status Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Growth of thick and high crystalline quality InGaN layers on GaN (000-1) substrate using tri-halide vapor phase epitaxy2016

    • Author(s)
      Takahide Hirasaki, Martin Eriksson, Quang Tu Thieu, Fredrik Karlsson, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, Per Olof Holtz, Akinori Koukitu
    • Journal Title

      Journal of Crystal Growth

      Volume: 456 Pages: 145-150

    • DOI

      10.1016/j.jcrysgro.2016.08.019

    • Related Report
      2016 Research-status Report
    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] LETTER Tri-halide vapor-phase epitaxy of GaN using GaCl3 on polar, semipolar, and nonpolar substrates2016

    • Author(s)
      Kenji Iso, Nao Takekawa, Karen Matsuda, Kazuhiro Hikida, Naoto Hayashida, Hisashi Murakami and Akinori Koukitu
    • Journal Title

      Applied Physics Express

      Volume: 9 Issue: 10 Pages: 105501-105501

    • DOI

      10.7567/apex.9.105501

    • Related Report
      2016 Research-status Report
    • Peer Reviewed
  • [Presentation] MOVPE-like Tri-Halide Vapor Phase Epitaxy of Thick GaN and AlGaN using GaCl3 and AlCl32018

    • Author(s)
      Mayuko Kobayashi, Nao Takekawa, Machi Takahashi, and Hisashi Murakami
    • Organizer
      19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] トリハライド気相成長法によるGaN高温高速厚膜成長2018

    • Author(s)
      村上尚,竹川直,熊谷義直,纐纈明伯
    • Organizer
      日本結晶成長学会ナノ構造・エピタキシャル成長分科会第10回ナノ構造・エピタキシャル成長講演会
    • Related Report
      2018 Annual Research Report
    • Invited
  • [Presentation] THVPE法を用いたGaNの高温・高速成長2018

    • Author(s)
      大関大輔,竹川直,山口晃,村上尚,熊谷義直,松本功,纐纈明伯
    • Organizer
      日本結晶成長学会ナノ構造・エピタキシャル成長分科会第10回ナノ構造・エピタキシャル成長講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] THVPE法によるアモノサーマル製バルクシード上のGaNホモエピタキシャル成長2018

    • Author(s)
      大瀧将磨, 磯憲司, 村上尚, 纐纈明伯
    • Organizer
      日本結晶成長学会ナノ構造・エピタキシャル成長分科会第10回ナノ構造・エピタキシャル成長講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] THVPE法による窒化ガリウムの高速ホモエピタキシャル成長2018

    • Author(s)
      河本直哉,竹川直,大関大輔,大瀧将磨,山口晃,村上尚,熊谷義直,松本功,纐纈明伯
    • Organizer
      日本結晶成長学会ナノ構造・エピタキシャル成長分科会第10回ナノ構造・エピタキシャル成長講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] Excess Chlorine and Growth Temperature Effects of N-Polar GaN Growth via Tri-halide Vapor Phase Epitaxy and its Theoretical Study2018

    • Author(s)
      N. Takekawa, D. Oozeki, A. Yamaguchi, H. Murakami, Y. Kumagai, K. Matumoto, A. Koukitu
    • Organizer
      7th International Symposium on Growth of III-Nitrides (ISGN-7)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Progress in halide vapor phase epitaxy of Ga2O32018

    • Author(s)
      H. Murakami, K. Konishi, K. Goto, Q.-T. Thieu, K. Sasaki, A. Kuramata, S. Yamakoshi, M. Higashiwaki, Y. Kumagai
    • Organizer
      European Materials Research Society 2018 Fall Meeting
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] THVPE法を用いたN極性GaNの高温成長2018

    • Author(s)
      大関 大輔、竹川 直、河本 直哉、山口 晃、村上 尚、熊谷 義直、松本 功、纐纈 明伯
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] Recent progress in tri-halide vapor phase epitaxy of GaN-related materials2018

    • Author(s)
      Hisashi Murakami, Nao Takekawa, Kentaro Ema, Yoshinao Kumagai, and Akinori Koukitu
    • Organizer
      International Workshop on Nitride Semiconductors 2018
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] High temperature growth of N-polar GaN by THVPE2018

    • Author(s)
      Daisuke Oozeki, Nao Takekawa, Naoya Kawamoto, Akira Yamaguchi, Hisashi Murakami, Yoshinao Kumagai, Kou Matsumoto, and Akinori Koukitu
    • Organizer
      International Workshop on Nitride Semiconductors 2018
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] GaN growth on the three-dimensional-shaped SCAAT bulk seed by tri-halide vapor phase epitaxy using GaCl32018

    • Author(s)
      Kenji Iso, Daisuke Oozeki, Syoma Ohtaki, Hisashi Murakami, and Akinori Koukitu
    • Organizer
      International Workshop on Nitride Semiconductors 2018
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Influence of intermediate layers on thick InGaN growth using THVPE2018

    • Author(s)
      Kentaro Ema, Rio Uei, Hisashi Murakami, and Akinori Koukitu
    • Organizer
      International Workshop on Nitride Semiconductors 2018
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] The effect of NH3 partial pressure on GaN growth via Tri-halide vapor phase epitaxy using solid source GaCl32018

    • Author(s)
      Nao Takekawa, Mayuko Kobayashi, Machi Takahashi, and Hisashi Murakami
    • Organizer
      International Workshop on Nitride Semiconductors 2018
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] トリハライド気相成長法による格子緩和したInGaN厚膜成長2018

    • Author(s)
      植井 里緒、川邊 充希、江間 研太郎、村上 尚、熊谷 義直、纐纈 明伯
    • Organizer
      第66回応用物理学会春季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] Heteroepitaxial growth of ε-Ga2O3 thin films on c-plane sapphire and GaN templates by HVPE2018

    • Author(s)
      Mayuko Sato, Nao Takekawa, Keita Konishi, Hisashi Murakami and Yoshinao Kumagai
    • Organizer
      International Conference on Light Emitting Devices and their Applications 2018
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research
  • [Presentation] MOVPE-like Tri-Halide Vapor Phase Epitaxy of Thick GaN and AlGaN using GaCl3 and AlCl32018

    • Author(s)
      Mayuko Kobayashi, Nao Takekawa, Machi Takahashi, Hisashi Murakami
    • Organizer
      19th International Conference on MetalOrganic Vapor Phase Spitaxy
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research
  • [Presentation] High temperature growth of thick InGaN layer with the indium solid composition of 10% using tri-halide vapor phase epitaxy2017

    • Author(s)
      Naoya Matsumoto, Misaki Meguro, Kentaro Ema, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
    • Organizer
      International Conference on Light Emitting Devices and their Applications 2017
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research
  • [Presentation] Tri-Halide Vapor Phase Epitaxy of Thick InGaN and AlGaN Ternary Alloys2017

    • Author(s)
      Hisashi Murakami, Kentaro Ema, Naoya Matsumoto, Machi Takahashi, Rio Uei, Yoshinao Kumagai, and Akinori Koukitu
    • Organizer
      10th Internationational Workshop on Bulk Nitride Semiconductors
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research / Invited
  • [Presentation] THVPE of GaN -current topics-2017

    • Author(s)
      Akinori Koukitu, Nao Takekawa, Hisashi Murakami, Yoshinao Kumagai, Akira Yamaguchi, Koh Matsumoto
    • Organizer
      10th Internationational Workshop on Bulk Nitride Semiconductors
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research / Invited
  • [Presentation] High temperature growth of GaN by THVPE method2017

    • Author(s)
      N. Takekawa, N. Hayashida, D. Ohzeki, A. Yamaguchi, H. Murakami, Y. Kumagai, K. Matsumoto, A. Koukitu
    • Organizer
      International Workshop on UV Materials and Devices 2017
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research
  • [Presentation] 固体三塩化物原料を用いたGaNおよび AlGaNのトリハライド気相成長2017

    • Author(s)
      髙橋万智、小林真悠子、村上尚、纐纈 明伯
    • Organizer
      2017年度結晶工学未来塾
    • Related Report
      2017 Research-status Report
  • [Presentation] THVPE法を用いた無極性m面(10-10)および半極性面(10-1-1)上GaN厚膜成長2017

    • Author(s)
      大関大輔、磯憲司、松田華蓮、竹川直、引田和弘、林田直人、村上尚、纐纈明伯
    • Organizer
      2017年度結晶工学未来塾
    • Related Report
      2017 Research-status Report
  • [Presentation] THVPE法を用いたGaNの高温高速成長2017

    • Author(s)
      林田直人、竹川直、大関大輔、山口晃、村上尚、熊谷義直、松本功、纐纈明伯
    • Organizer
      2017年度結晶工学未来塾
    • Related Report
      2017 Research-status Report
  • [Presentation] 金属Cd原料を用いたVPE法によるSi基板上へのCdTe成長と評価2017

    • Author(s)
      極檀優也、磯憲司、2、白石万壽実、村上尚、纐纈明伯
    • Organizer
      2017年度結晶工学未来塾
    • Related Report
      2017 Research-status Report
  • [Presentation] 高品質InGaN厚膜成長を目指した中間層導入の検討2017

    • Author(s)
      植井里緒, 江間研太郎, 松本尚也, 村上尚, 熊谷義直, 纐纈明伯
    • Organizer
      第9回ナノ構造・エピタキシャル成長講演会
    • Related Report
      2017 Research-status Report
  • [Presentation] トリハライド気相成長法によるInGaN系光デバイス作製に向けた膜厚制御性の検討2017

    • Author(s)
      江間研太郎、松本尚也、植井里緒、村上尚、熊谷義直、纐纈明伯
    • Organizer
      第9回ナノ構造・エピタキシャル成長講演会
    • Related Report
      2017 Research-status Report
  • [Presentation] 金属Cd原料を用いた気相成長法によるCdTe膜成長とその評価2017

    • Author(s)
      白石 万壽実, 磯 憲司, 極檀 優也, 村上 尚, 纐纈 明伯
    • Organizer
      日本学術振興会第162委員会100回記念公開シンポジウム
    • Related Report
      2017 Research-status Report
  • [Presentation] HVPE growth of the group III nitrides2017

    • Author(s)
      A. Koukitu, Y. Kumagai, H. Murakami
    • Organizer
      36th Electronic Material Symposium (EMS36)
    • Related Report
      2017 Research-status Report
    • Invited
  • [Presentation] Thick GaN and AlGaN Growth by Solid-Source Tri-Halide Vapor Phase Epitaxy2017

    • Author(s)
      Hisashi Murakami, Machi Takahashi, Akinori Koukitu
    • Organizer
      36th Electronic Material Symposium (EMS36)
    • Related Report
      2017 Research-status Report
  • [Presentation] Thick InGaN layer with the indium solid composition over 10% using tri-halide vapor phase epitaxy2017

    • Author(s)
      H. Murakami, K. Ema, N. Matsumoto, M. Meguro, H. Murakami, Y. Kumagai, and A. Koukitu
    • Organizer
      11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017)
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research
  • [Presentation] トリハライド気相成長法によるGaN高温厚膜成長2017

    • Author(s)
      村上 尚,竹川 直,熊谷 義直,山口 晃,松本 功,纐纈明伯
    • Organizer
      第46回結晶成長国内会議(JCCG-46)
    • Related Report
      2017 Research-status Report
    • Invited
  • [Presentation] トリハライド気相成長法を用いた N 極性窒化ガリウムの高温成長2016

    • Author(s)
      竹川 直、引田 和弘、松田 華蓮、林田 直人、村上 尚、熊谷 義直、纐纈 明伯
    • Organizer
      第8回窒化物半導体結晶成長講演会
    • Place of Presentation
      京都大学, 京都府
    • Related Report
      2016 Research-status Report
  • [Presentation] トリハライド気相成長法による GaN 成長の基板面方位依存性2016

    • Author(s)
      松田 華蓮、磯 憲司、竹川 直、引田 和宏、林田 直人、村上 尚、纐纈 明伯
    • Organizer
      第8回窒化物半導体結晶成長講演会
    • Place of Presentation
      京都大学, 京都府
    • Related Report
      2016 Research-status Report
  • [Presentation] High Temperature Growth of Thick InGaN Layers using Tri-Halide Vapor Phase Epitaxy2016

    • Author(s)
      M. Meguro, T. Hirasaki, T. Hasegawa, Q. T.Thieu, H. Murakami, Y. Kumagai, B. Monemar, A. Koukitu
    • Organizer
      International Conference on LEDs and their Industrial Applications ’16 (LEDIA'16)
    • Place of Presentation
      Pacifico Yokohama, Kanagawa, Japan
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research
  • [Presentation] High temperature growth of thick InGaN ternary alloy by tri-halide vapor phase epitaxy2016

    • Author(s)
      N. Matsumoto, M. Meguro, K. Ema, Q.-T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, A. Koukitu
    • Organizer
      35th Electronic Materials Symposium (EMS-35)
    • Place of Presentation
      ラフォーレ琵琶湖、滋賀県
    • Related Report
      2016 Research-status Report
  • [Presentation] High-Speed Growth of Thick InGaN Ternary Alloy by Tri-Halide Vapor Phase Epitaxy2016

    • Author(s)
      H. Murakami, T. Hirasaki, M. Meguro, Q.-T. Thieu, R. Togashi, Y. Kumagai, B. Monemar, A. Koukitu
    • Organizer
      18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
    • Place of Presentation
      Nagoya Congress Center, Nagoya, Japan
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research / Invited
  • [Presentation] Quasi-Equilibrium Crystal Shape and Kinetic Wulff Plot for GaN Grown by Tri-Halide Vapor Phase Epitaxy Using GaCl32016

    • Author(s)
      Kenji Iso, Karen Matsuda, Nao Takekawa, Kazuhiro Hikida, Naoto Hayashida, Hisashi Murakami, and Akinori Koukitu
    • Organizer
      International Workshop on Nitride Semiconductors (IWN2016)
    • Place of Presentation
      Hilton Orlando Lake Buena Vista, Orlando, Florida, USA
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research
  • [Presentation] Dependence of GaN Growth on the Substrates with Various Surface Orientations by Tri-Halide Vapor Phase Epitaxy Using GaCl32016

    • Author(s)
      Kenji Iso, Karen Matsuda, Nao Takekawa, Kazuhiro Hikida, Naoto Hayashida, Hisashi Murakami, and Akinori Koukitu
    • Organizer
      International Workshop on Nitride Semiconductors (IWN2016)
    • Place of Presentation
      Hilton Orlando Lake Buena Vista, Orlando, Florida, USA
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research
  • [Presentation] Recent Progress in Tri-Halide Vapor Phase Epitaxy of Thick GaN and InGaN2016

    • Author(s)
      Hisashi Murakami, Nao Takekawa, Takahide Hirasaki, Yoshinao Kumagai, Kou Matsumoto, Akinori Koukitu
    • Organizer
      International Workshop on Nitride Semiconductors (IWN2016)
    • Place of Presentation
      Hilton Orlando Lake Buena Vista, Orlando, Florida, USA
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research / Invited
  • [Presentation] トリハライド気相成長法によるInGaN厚膜の高温成長2016

    • Author(s)
      江間研太郎、目黒美佐稀、松本尚也、村上尚、熊谷義直、纐纈明伯
    • Organizer
      応用物理学会第5回結晶工学未来塾
    • Place of Presentation
      東京農工大学、東京都
    • Related Report
      2016 Research-status Report
  • [Presentation] トリハライド気相成長法を用いたN極性窒化ガリウムの高温成長2016

    • Author(s)
      引田和宏,竹川直, 松田華蓮, 林田直人, 村上尚,熊谷義直,纐纈明伯
    • Organizer
      応用物理学会第5回結晶工学未来塾
    • Place of Presentation
      東京農工大学、東京都
    • Related Report
      2016 Research-status Report
  • [Presentation] 無極性、半極性面バルクGaN基板上へのTHVPE成長2016

    • Author(s)
      松田華蓮、磯憲司、竹川直、引田和宏、林田直人、村上尚、纐纈明伯
    • Organizer
      応用物理学会第5回結晶工学未来塾
    • Place of Presentation
      東京農工大学、東京都
    • Related Report
      2016 Research-status Report
  • [Presentation] トリハライド気相成長法を用いた擬平衡結晶面とウルフ図作成2016

    • Author(s)
      磯憲司、松田華蓮、竹川直、引田和宏、林田直人、村上尚、纐纈明伯
    • Organizer
      応用物理学会第5回結晶工学未来塾
    • Place of Presentation
      東京農工大学、東京都
    • Related Report
      2016 Research-status Report

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Published: 2016-04-21   Modified: 2020-03-30  

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