| Budget Amount *help |
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2018: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2017: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2016: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
|
|---|
| Outline of Final Research Achievements |
Study on high temperature and high speed growth of GaN using newly developed source materials of GaCl3 was performed. We have succeeded in the growth of GaN at over 1300 degree C which has never been reported previously, and grown crystal was high quality that could withstand practical use for devices. Growth rate of GaN by using GaCl3 (achieved in this study) was 2.5-3 times higher than that by conventional method of HVPE. Furthermore, crystalline quality of GaN grown with quite high speed was not degraded because the growth temperature was high. Therefore, technique using newly developed GaCl3 source materials explore the future manufacturing method of GaN bulk crystal.
|
