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Investigation on physical properties of Nb compounds with low valence states by using reductive epitaxy

Research Project

Project/Area Number 16K05737
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Research Field Functional solid state chemistry
Research InstitutionTohoku University

Principal Investigator

Oka Daichi  東北大学, 理学研究科, 助教 (20756514)

Research Collaborator Fukuda Shintaro  
Tokunaga Ryosuke  
Project Period (FY) 2016-04-01 – 2019-03-31
Project Status Completed (Fiscal Year 2018)
Budget Amount *help
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2018: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2017: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2016: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Keywordsニオブ / 酸化物 / 酸窒化物 / エピタキシャル薄膜 / 電気輸送特性 / バンドエンジニアリング / 電気伝導性 / 局在 / フェルミ液体 / バナジウム / 磁気抵抗 / 酸化物エレクトロニクス / 還元性エピタキシー / 4d電子系 / パルスレーザー堆積法 / トポケミカルプロセス
Outline of Final Research Achievements

Niobium compounds show varieties of physical properties depending on valence state. However, control of metastable oxidation state is difficult. In this study, we investigated physical properties of high-quality thin films of niobium oxides and relatives of which valence states were accurately controlled via epitaxy technique using single crystal substrates as templates. Oxides with single conducting electron per niobium ion showed high electrical conductivity comparable to those of metals as well as visible light absorption. Electrical conductivity depended not only valence state but also crystal structure, and was enhanced by suppression of distortion. By doping nitrogen which works as electron acceptor, the oxides gradually transited to insulators in which electrons are localized and showed stronger visible light absorption.

Academic Significance and Societal Importance of the Research Achievements

近年、ニオブ酸化物やニオブ酸窒化物などの材料は光触媒や光電極として優れた特性を示す光学材料として注目を集めている。本研究ではこれまで合成上の難しさから系統的な調査が乏しかったイオン価数や結晶構造の変化に注目し、電気特性および光学特性を決定づける要因を明らかにした。ニオブの柔軟な価数に応じて電気伝導性は金属的電動から絶縁体的な状態まで大きく変化する一方、可視光吸収係数は特定の組成において高くなることが分かった。これは、単純な金属材料や半導体材料とは異なり、電子間相互作用が顕著なためである。本研究で得られた知見は、高性能なニオブベースの光学材料を設計するための指針になると期待される。

Report

(4 results)
  • 2018 Annual Research Report   Final Research Report ( PDF )
  • 2017 Research-status Report
  • 2016 Research-status Report
  • Research Products

    (5 results)

All 2019 2018 2017

All Journal Article (2 results) (of which Peer Reviewed: 2 results) Presentation (3 results) (of which Int'l Joint Research: 1 results)

  • [Journal Article] Anion-substitution induced non-rigid variation of band structure in SrNbO3-xNx (0 - x - 1) epitaxial thin films2018

    • Author(s)
      Daichi Oka, Yasushi Hirose, Shoichiro Nakao, Masanori Kaneko, Tomoteru Fukumura, Koichi Yamashita, Tetsuya Hasegawa
    • Journal Title

      ACS Appl. Mater. Interfaces

      Volume: 10 Issue: 41 Pages: 35008-35015

    • DOI

      10.1021/acsami.8b08577

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Crystal engineering for novel functionalities with oxide thin film epitaxy2017

    • Author(s)
      Daichi Oka and Tomoteru Fukumura
    • Journal Title

      CrystEngComm

      Volume: 19 Issue: 16 Pages: 2144-2162

    • DOI

      10.1039/c7ce00322f

    • Related Report
      2016 Research-status Report
    • Peer Reviewed
  • [Presentation] ペロブスカイト型BaNbO3エピタキシャル薄膜の合成と電気伝導性2019

    • Author(s)
      徳永 凌祐,岡 大地,福田 慎太郎, 福村 知昭
    • Organizer
      第66回 応用物理学会 春季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] Ruddlesden-Popper型Srn+1VnO3n+1(001)(n = 1, 2)エピタキシャル薄膜の次元性制御による金属絶縁体転移2018

    • Author(s)
      福田 慎太郎、岡 大地、福村 知昭
    • Organizer
      第65回応用物理学会春季学術講演会
    • Related Report
      2017 Research-status Report
  • [Presentation] Growth and Magnetic Properties of Ruddlesden-Popper Series Srn+1VnO3n+1 Epitaxial Thin Films2017

    • Author(s)
      Shintaro Fukuda, Daichi Oka, and Tomoteru Fukumura
    • Organizer
      2017 International Conference on Solid State Devices and Materials
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research

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Published: 2016-04-21   Modified: 2020-03-30  

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