| Project/Area Number |
16K05967
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Multi-year Fund |
|---|
| Section | 一般 |
|---|
| Research Field |
Materials/Mechanics of materials
|
|---|
| Research Institution | The University of Tokyo |
|---|
Principal Investigator |
Izumi Satoshi 東京大学, 大学院工学系研究科(工学部), 教授 (30322069)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
波田野 明日可 東京大学, 大学院工学系研究科(工学部), 講師 (20707202)
|
|---|
| Project Period (FY) |
2016-04-01 – 2019-03-31
|
| Project Status |
Completed (Fiscal Year 2018)
|
| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2018: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2017: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2016: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
|
|---|
| Keywords | 分子動力学 / 4H-SiC / 転位 / ナノマイクロ材料力学 |
|---|
| Outline of Final Research Achievements |
4H-SiC has gained attention as a material for advanced power devices. In this paper, we investigate the surface effect on the screw-type BPD (basal plane dislocation)-TED (threading edge dislocation) conversion using reaction pathway analysis. It is found that the constriction of a partial dislocation pair easily occurs in the vicinity of the surface and that the constriction in the Si-face substrate is easier than that in the C-face one. Also, we find that the cross slip of a perfect screw BPD easily occurs in the vicinity of the surface and that the cross slip in the Si-face is easier than that in the C-face. In addition, we reveal that the rate-limiting step of the cross slip is the glide to shuffle-glide mix transition. We also perform molecular dynamics simulations of a perfect screw BPD-TED conversion in an off-cut substrate and confirm that spontaneous conversion occurs even at low temperature(500K).
|
| Academic Significance and Societal Importance of the Research Achievements |
本研究は、応用物理学会で二回の受賞（第65回応用物理学会 春季学術講演会 講演奨励賞、第78回応用物理学会 秋季学術講演会 PosterAward」）を受けており、学術・産業界において非常にインパクトの高い研究である。それらの成果はJapanese Journal of Applied Physicsに掲載されている。 また、SIPプロジェクト「次世代パワーエレクトロニクス」のメンバの中でも情報収集され、企業や研究所のメンバと議論を行った。今後、SiCパワーデバイスの品質改善に応用されていく予定である。
|
