Crystallization of Silicon Thin Films by Microwave Rapid Heating

• Project/Area Number: 16K06255
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Tokyo University of Agriculture and Technology
• Principal Investigator: Hasumi Masahiko 東京農工大学, 工学(系)研究科(研究院), 助教 (60261153)
• Research Collaborator: Sameshima Toshiyuki
• Project Period (FY): 2016-04-01 – 2019-03-31
• Project Status: Completed (Fiscal Year 2018)
• Budget Amount: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000); Fiscal Year 2018: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000); Fiscal Year 2017: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000); Fiscal Year 2016: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
• Keywords: マイクロ波加熱 / シリコン / 結晶化 / 活性化 / ソーラーセル / マイクロ波 / 加熱炉 / アモルファスシリコン / 熱拡散ドーピング / 電子デバイス・機器 / ナノ材料 / 太陽電池 / 半導体物性

Outline of Final Research Achievements

We have developed a microwave rapid heating system with a carbon heating tube (CHT). 2.45 GHz microwave at 200 W was introduced to a metal cavity, in which the CHT made by quartz tube filled with carbon powders and Ar gas was set at the central position. The CHT heating at 1200oC realized a crystallization of 50-nm-thick amorphous silicon thin films. High crystalline volume ratios ranging from 0.89 to 0.94 was obtained.

Academic Significance and Societal Importance of the Research Achievements

今回の研究成果は、カーボン・ヒーティング・チューブを用いたマイクロ波急速加熱装置のさまざまな応用の可能性を示している。本研究で開発したカーボン・ヒーティング・チューブは、無電極の発熱ランプであり、電気的な配線を必要としないため、耐久性に優れている。また、配線を通じた熱の逃げが発生しないため、従来にない省エネルギー性の高い加熱装置を実現することができる。さらに、従来のランプやヒーターに用いられる高価なレアメタルを必要とせず、安価な装置製造を可能とする。

Research Products

• [Journal Article] Carbon Heating Tube Used for Rapid Heating System (2019)
  • Author(s): Sameshima Toshiyuki、Miyazaki Tomoyoshi、Kobayashi Go、Arima Takuji、Kikuchi Toshitaka、Uehara Takuma、Sugawara Takashi、Hasumi Masahiko、Serizawa Izumi
  • Journal Title: IEEE Access Volume: 7 Pages: 23798-23805
  • DOI: 10.1109/access.2019.2897981
  • Peer Reviewed / Open Access
• [Journal Article] Activation Behavior of Polycrystalline Silicon Films by Phosphorus Ion Implantation at 200oC (2017)
  • Author(s): T. Sugawara, N. Tanaka, S. Kimura, M. Hasumi, T. Nagao, Y. Inouchi, T. Sameshima
  • Journal Title: Proc. Workshop on Active Matrix Flatpanel Display and Devices Volume: - Pages: 270-271
  • Peer Reviewed
• [Journal Article] Crystallization and activation of silicon by microwave rapid annealing (2016)
  • Author(s): S. Kimura, K. Ota, M. Hasumi, A. Suzuki, M. Ushijima, and T. Sameshima
  • Journal Title: Appl. Phys. A Volume: 122 Issue: 7
  • DOI: 10.1007/s00339-016-0220-7
  • Peer Reviewed / Open Access
• [Journal Article] Crystallization of Silicon Thin Films By Microwave-Induced Rapid Heating (2016)
  • Author(s): S. Kimura, K. Ota, M. Hasumi, A. Suzuki, M. Ushijima, and T. Sameshima
  • Journal Title: Proc. in PhotoVoltaic Technical Conference Volume: - Pages: 2118-2118
  • Peer Reviewed
• [Presentation] Fabrication of crystalline silicon solar cells by rapid heating with carbon heating tube (2019)
  • Author(s): Toshitaka Kikuchi, Takashi Sugawara, Takuma Uehara, Tomoyoshi Miyazaki, Go Kobayashi, Masahiko Hasumi, Takuji Arima, Toshiyuki Sameshima
  • Organizer: 第66回応用物理学会春季学術講演会
• [Presentation] Heating equipment with carbon heating used to activate silicon and fabricate its solar cells (2018)
  • Author(s): Toshitaka Kikuchi, Takashi Sugawara, Takuma Uehara, Tomoyoshi Miyazaki, Go Kobayashi, Masahiko Hasumi, Toshiyuki Sameshima
  • Organizer: 第79回応用物理学会秋季学術講演会
• [Presentation] Carbon Heating Tube Used for Rapid Heating System for Semiconductor Annealing (2018)
  • Author(s): T. Miyazaki, G. Kobayashi, T. Sugawara, T. Kikuchi, M. Hasumi, and T. Sameshima
  • Organizer: THE 25TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES
  • Int'l Joint Research
• [Presentation] Heat treatment in liquid water at 80oC used to improve the interface characteristic of metal-oxide-semiconductor capacitor (2018)
  • Author(s): Yoshito Hirokawa、Masahiko Hasumi、Toshiyuki Sameshima、Tomohisa Mizuno
  • Organizer: 第65回応用物理学会春季学術講演会
• [Presentation] PN接合におけるバイアス電圧印加による光誘起少数キャリアライフタイムの挙動 (2017)
  • Author(s): 太田康介, 鮫島俊之, 蓮見真彦, 水野智久
  • Organizer: 第14回薄膜材料デバイス研究会
• [Presentation] Activation Behavior of Polycrystalline Silicon Films by Phosphorus Ion Implantation at 200oC (2017)
  • Author(s): T. Sugawara, N. Tanaka, S. Kimura, M. Hasumi, T. Nagao, Y. Inouchi, T. Sameshima
  • Organizer: The 24th International Workshop on Active-Matrix Flatpanel Displays and Devices
  • Int'l Joint Research
• [Presentation] PN接合におけるバイアス電圧印加による光誘起少数キャリアライフタイムの挙動 (2016)
  • Author(s): 太田康介, 蓮見真彦, 鮫島俊之
  • Organizer: 第13回薄膜材料デバイス研究会
  • Place of Presentation: 龍谷大学響都ホール（京都府京都市）
  • Year and Date: 2016-10-22
• [Presentation] Microwave Rapid Heating Used for Diffusing Impurities in Silicon (2016)
  • Author(s): K. Ota, S. Kimura, M. Hasumi, A. Suzuki, M. Ushijima, T. Sameshima
  • Organizer: The Twenty-Third International Workshop on Active-Matrix Flatpanel Displays and Devices
  • Place of Presentation: Avanti Kyoto Hall, Kyoto, Japan
  • Year and Date: 2016-07-07
  • Int'l Joint Research
• [Presentation] Crystallization of Silicon Thin Films By Microwave-Induced Rapid Heating (2016)
  • Author(s): S. Kimura, K. Ota, M. Hasumi, A. Suzuki, M. Ushijima, and T. Sameshima
  • Organizer: The Electrochemical Society 229th meeting
  • Place of Presentation: San Diego, USA
  • Year and Date: 2016-06-01
  • Int'l Joint Research