Study on n type doping of gallium oxide wide bandgap semiconductors

• Project/Area Number: 16K06268
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Saga University
• Principal Investigator: GUO QIXIN 佐賀大学, シンクロトロン光応用研究センター, 教授 (60243995)
• Project Period (FY): 2016-04-01 – 2019-03-31
• Project Status: Completed (Fiscal Year 2018)
• Budget Amount: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000); Fiscal Year 2018: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000); Fiscal Year 2017: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000); Fiscal Year 2016: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
• Keywords: 化合物半導体 / 電気特性 / ワイドギャップ / 電子・電気材料

Outline of Final Research Achievements

We have investigated the growth and properties of wide gap gallium oxide films which are attracting attention for power devices and deep ultraviolet solid light sources.The Si doped gallium oxide films were grown by pulsed laser deposition. We found that the carrier density of the films determined by Hall and Kelvin force microscopy measurements can be controlled by changing Si compositions in the gallium oxide targets. The results pave a way to develop gallium oxide based electronic devices.

Academic Significance and Societal Importance of the Research Achievements

パルスレーザー堆積法を用いて新規ワイドギャップ半導体である酸化ガリウム膜の電気伝導度の制御に成功し、ドーピング機構の解明に関する知見が得られたことは学術的に大きな意義がある。これにより、酸化ガリウムを用いた超低損失のパワーデバイスの研究が進み、各種電源、家電、ハイブリッド車、電気自動車、電車、変電所など、あらゆる電気・電子装置に搭載されているパワーデバイスの電力利用効率が飛躍的に向上することが可能であるので、社会的な意義は極めて大きいと思われる。

Research Products

• [Journal Article] Structural and Electrical Properties of Ga 2 O 3 Films Deposited under Different Atmospheres by Pulsed Laser Deposition (2018)
  • Author(s): Zhang, F., Li, H., Guo, Q.
  • Journal Title: Journal of Electronic Materials Volume: 47 Issue: 11 Pages: 6635-6640
  • DOI: 10.1007/s11664-018-6545-6
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Evolution of optical properties and band structure from amorphous to crystalline Ga2O3 films (2018)
  • Author(s): Fabi Zhanｇ, Haiou Li, Yi-Tao Cui, Guo-Ling Li, and Qixin Guo
  • Journal Title: AIP Advances Volume: ８ Issue: 4
  • DOI: 10.1063/1.5021867
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Ultraviolet detectors based on (GaIn)2O3 films (2017)
  • Author(s): Fabi Zhang, Haiou Li, Makoto Arita, and Qixin Guo
  • Journal Title: Optical Materials Express Volume: 7 Issue: 10 Pages: 3769-3779
  • DOI: 10.1364/ome.7.003769
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Toward controlling the carrier density of Si doped Ga2O3 films by pulsed laser deposition (2017)
  • Author(s): Fabi Zhang , Makoto Arita , Xu Wang , Zhengwei Chen , Katsuhiko Saito , Tooru Tanaka , Mitsuhiro Nishio , Teruaki Motooka , Qixin Guo*
  • Journal Title: Applied Physics Letters Volume: 109
  • Peer Reviewed / Acknowledgement Compliant
• [Presentation] Characteristics of gallium oxide based wide bandgap semiconductors (2018)
  • Author(s): Qixin GUO
  • Organizer: 7th International Symposium on Transparent Conductive Materials
  • Int'l Joint Research / Invited
• [Presentation] Characteristics of gallium oxide based semiconductors (2018)
  • Author(s): Qixin GUO
  • Organizer: The 7th Global Conference on Materials Science and Engineering
  • Int'l Joint Research / Invited
• [Presentation] Growth and characterization of gallium oxide based wide bandgap semiconductors (2018)
  • Author(s): Qixin GUO
  • Organizer: International Conference on Physics of Light-Matter Coupling in Nanostructures
  • Int'l Joint Research / Invited
• [Presentation] 2.Characteristics of gallium oxide based wide bandgap semiconductors (2017)
  • Author(s): Qixin GUO
  • Organizer: TACT2017 International Thin Film Conference
  • Int'l Joint Research / Invited
• [Presentation] 3.Epitaxial growth of gallium oxide based wide bandgap semiconductors (2017)
  • Author(s): Qixin GUO
  • Organizer: Collaborative Conference on Materials Research (CCMR) 2017
  • Int'l Joint Research / Invited
• [Presentation] 1.Characteristics of gallium oxide films grown by oxygen plasma assisted pulsed laser deposition (2017)
  • Author(s): C. Hu, K. Saito, T. Tanaka, and Q. Guo
  • Organizer: International Workshop on UV Materials and Devices (IWUMD 2017)
  • Int'l Joint Research
• [Presentation] Growth and characterization of (AlGa)2O3 films (2016)
  • Author(s): Qixin GUO
  • Organizer: The International Workshop on UV Materials and Devices (IWUMD-2016)
  • Place of Presentation: Beijing
  • Int'l Joint Research / Invited
• [Presentation] Crystal growth of gallium oxide based wide bandgap semiconductors (2016)
  • Author(s): Qixin GUO
  • Organizer: International conference on applied crystallography
  • Place of Presentation: Houston
  • Int'l Joint Research
• [Remarks] 佐賀大学シンクロトロン光応用研究センター
  • URL: http://www.slc.saga-u.ac.jp/