Fabrication of "Smart Window" using oxide semiconductors
Project/Area Number |
16K06274
|
Research Category |
Grant-in-Aid for Scientific Research (C)
|
Allocation Type | Multi-year Fund |
Section | 一般 |
Research Field |
Electronic materials/Electric materials
|
Research Institution | Tokyo University of Science |
Principal Investigator |
Sugiyama Mutsumi 東京理科大学, 理工学部電気電子情報工学科, 教授 (40385521)
|
Research Collaborator |
TANUMA Ryo
NAKAI Hiroshi
|
Project Period (FY) |
2016-04-01 – 2019-03-31
|
Project Status |
Completed (Fiscal Year 2018)
|
Budget Amount *help |
¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2018: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2017: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2016: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
|
Keywords | 酸化ニッケル / 酸化亜鉛 / トランジスタ / 透明太陽電池 / 二酸化炭素センサ / 電子・電気材料 / 太陽電池 / 環境材料 / 半導体物性 |
Outline of Final Research Achievements |
Fabrication of "Smart Window" using oxide semiconductors was carried out by conventional RF sputtering. Its power was supplied from "NiO/ZnO-related visible-light-transparent solar cells" for "transparent CO2 sensors" using a wide gap semiconductor. In addition, p-channel and n-channel transparent simple TFT were fabricated. Moreover, the fundamental transmittance and electrical properties of undoped and Li-doped NiO thin films deposited were evaluated. These results are the first step toward realizing the integrated self-powered devices such as Smart Window.
|
Academic Significance and Societal Importance of the Research Achievements |
これまでNiOを絶縁体や誘電体、光触媒などの材料として使用した報告例は多いが、半導体として研究し太陽電池に応用している例は国内外ともに非常に少なく、NiOを用いた太陽電池・エネルギーハーベストデバイスを作製すること自体が独創的であった。本課題が遂行されたことにより、(I) NiOなど高品質薄膜堆積技術の確立、(II) 高効率透明太陽電池・スマートウィンドウ作製プロセスなどへの応用の提案、 (III) エコで設置が容易な高機能性窓ガラスやビニルハウスなどのイノベーションの創出などの波及効果への期待、更に、(IV) 今後のNiO系材料の研究活性化・高効率化に向け一石を投じる事ができたと考える。
|
Report
(4 results)
Research Products
(24 results)
-
-
-
-
-
[Journal Article] Investigation of LaVO3 based compounds as a photovoltaic absorber2018
Author(s)
M. Jellite, J.-L. Rehspringer, M. A. Fazio, D. Muller, G. Schmerber, G. Ferblantier, S. Colis, A. Dinia, M. Sugiyama, A. Slaoui, A. Minj, D. Cavalcol, T. Fix
-
Journal Title
Solar Energy
Volume: 162
Pages: 1-7
DOI
Related Report
Peer Reviewed
-
-
-
-
-
-
-
-
-
-
-
-
[Presentation] Growth of Non-Polar GaN Thin Films on Glass Substrates by Conventional RF Sputtering Using a High Quality Polycrystalline GaN Target2017
Author(s)
M. Simanullang, N. Kawakami, W. Zehua, R. Tanuma, Y. Ohteki, T. Yoshida, and M. Sugiyama
Organizer
Materials Research Society, 2017 Fall Meeting, EM04: Wide- and Ultra-Wide-Bandgap Materials and Devices, Boston, MA, USA
Related Report
Int'l Joint Research
-
-
-
-
-
-
-