Construction of process and design basis for the realization of a new ultra-low loss nitride heterostructure transistors
| Project/Area Number |
16K06298
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Nagoya Institute of Technology |
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Principal Investigator |
MAKOTO MIYOSHI 名古屋工業大学, 工学(系)研究科(研究院), 教授 (30635199)
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| Project Period (FY) |
2016-04-01 – 2019-03-31
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| Project Status |
Completed (Fiscal Year 2018)
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| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2018: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2017: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2016: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
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| Keywords | 窒化物半導体 / パワートランジスタ / 界面準位 / フォトルミネッセンス / AlGaN / トランジスタ / 界面準位密度 / ノーマリオフ / 電子デバイス・機器 / 電子・電気材料 / 結晶工学 / 半導体物性 |
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| Outline of Final Research Achievements |
Effects of semiconductor processing, such as dry etching and insulating film deposition, on material properties of MOCVD-grown AlGaN films were investigated by PL measurements. In addition, an AlGaN channel MIS diode was fabricated and its interface state was evaluated by CV measurements. There was no large contradiction in interface properties of the AlGaN channel MIS structure in comparison with conventional GaN-channel structures. It has been confirmed that the AlGaN-channel MIS transistor exhibits superior off-state characteristics than those of the conventional GaN-channel HFET.
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| Academic Significance and Societal Importance of the Research Achievements |
本研究では、将来の増え続ける電力需要に応える超低損失パワーデバイスの創成を目指し、応募者らが独自開発した新規窒化物ヘテロ構造による絶縁ゲートトランジスタ実現に向けた基盤研究を計画した。研究では、絶縁ゲート形成プロセスに係るフォトルミネッセンス特性や電気特性を調べることができ、結果として良好なデバイス特性を示す絶縁ゲートトランジスタの試作に成功した。ここで得られた成果は、将来の超低損失パワーデバイス実現に大きく寄与するものと考える。
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Report
(4 results)
Research Products
(22 results)
