| Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2018: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2017: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2016: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
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| Outline of Final Research Achievements |
There are many absorption lines of gases such as carbon oxide, carbon dioxide and hydrocarbon gasses corresponding to the molecular vibration in the mid-infrared range from 2 to 5 μm in wavelength. Therefore optical gas sensing is possible using mid infrared lasers and detectors. We investigated the growth condition of InAs/GaSb type II superlattice using metalorganic vapor phase epitaxy. We tested the x-ray diffraction of various fabricated samples and determined the time constant of residual gasses in reactor. Also, we optimized growth condition of InAs buffer on GaAs substrate and realized flat virtual InAs substrate. Clear photoluminescence peak in 3 micron rage was observed on GaAs substrate, successfully.
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