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Flexible and transparent circuits for stacked image sensor application

Research Project

Project/Area Number 16K06309
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Research Field Electron device/Electronic equipment
Research InstitutionKochi University of Technology

Principal Investigator

FURUTA MAMORU  高知工科大学, 環境理工学群, 教授 (20412439)

Project Period (FY) 2016-04-01 – 2019-03-31
Project Status Completed (Fiscal Year 2018)
Budget Amount *help
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2018: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2017: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2016: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Keywords酸化物半導体 / 薄膜トランジスタ / イメージセンサ / 低温プロセス / フレキシブルデバイス / 信頼性 / イメージセンサー / フレキシブル電子デバイス / 電子・電気材料 / ディスプレイ
Outline of Final Research Achievements

The aim of this research is to achieve transparent circuits on organic photosensitive materials whose temperature should be maintained below 150 ℃. Main two achievements of this research are 1) proposing an Ar+O2+H2 sputtering for oxide semiconductors to reduce defects through low-temperature annealing at around 150 ℃, 2) high-k alumina dielectric is formed at room temperature by an anodization of aluminum film.
By applying the results to the IGZO thin-film transistor, low-power and high performance thin-film transistors were successfully demonstrated at a maximum processing temperature of 150 ℃. The achievements will open new doors for transparent and flexible electronics applications.

Academic Significance and Societal Importance of the Research Achievements

研究成果の学術的意義は、酸化物半導体スパッタ成膜時の水素添加を提案し欠陥低減熱処理温度を低減可能であることを見いだしたことに加え、導入した水素が熱処理を通じてキャリア抑制効果をもたらすことをはじめて報告した点にある。これまでは酸化物半導体中の水素はドナーであると報告されてきたが、キャリアの起源である酸素欠損の抑制効果は材料物性制御の可能性を拡げる結果であると言える。
社会的意義としては、従来転写法や高価な高耐熱基板上で実現されてきたフレキシブルデバイスを透明かつ低コストプラスチック基板上に実現する路を拓いたことで、新たなフレキシブル透明回路の実現に寄与する結果であると言える。

Report

(4 results)
  • 2018 Annual Research Report   Final Research Report ( PDF )
  • 2017 Research-status Report
  • 2016 Research-status Report
  • Research Products

    (73 results)

All 2019 2018 2017 2016 Other

All Journal Article (26 results) (of which Int'l Joint Research: 8 results,  Peer Reviewed: 26 results,  Open Access: 10 results,  Acknowledgement Compliant: 1 results) Presentation (46 results) (of which Int'l Joint Research: 22 results,  Invited: 11 results) Remarks (1 results)

  • [Journal Article] High mobility sputtered InSb film by blue laser diode annealing2019

    • Author(s)
      Koswaththage C. J.、Higashizako T.、Okada T.、Sadoh T.、Furuta M.、Bae B. S.、Noguchi T.
    • Journal Title

      AIP Advances

      Volume: 9 Issue: 4

    • DOI

      10.1063/1.5087235

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Collaborative optimization of thermal budget annealing and active layer defect content enhancing electrical characteristics and bias stress stability in InGaZnO thin-film transistors2019

    • Author(s)
      Wang Dapeng、Zhao Wenjing、Furuta Mamoru
    • Journal Title

      Journal of Physics D: Applied Physics

      Volume: 52 Issue: 23 Pages: 235101-235101

    • DOI

      10.1088/1361-6463/ab10fc

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Heterojunction channel engineering to enhance performance and reliability of amorphous In?Ga?Zn?O thin-film transistors2019

    • Author(s)
      Furuta Mamoru、Koretomo Daichi、Magari Yusaku、Aman S G Mehadi、Higashi Ryunosuke、Hamada Syuhei
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 58 Issue: 9 Pages: 090604-090604

    • DOI

      10.7567/1347-4065/ab1f9f

    • NAID

      210000155922

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors2019

    • Author(s)
      Dapeng Wang and Mamoru Furuta
    • Journal Title

      Beilstein Journal of Nanotechnology

      Volume: 10 Pages: 1125-1130

    • DOI

      10.3762/bjnano.10.112

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research
  • [Journal Article] Improvement in bias-stress and long-term stabilities for in-Ga-Zn-O thin-film transistors using solution-process-compatible polymeric gate insulator2019

    • Author(s)
      Kwak Sol-Mi、Kim Hyeong-Rae、Jang Hye-Won、Yang Ji-Hee、Mamoru Furuta、Yoon Sung-Min
    • Journal Title

      Organic Electronics

      Volume: 71 Pages: 7-13

    • DOI

      10.1016/j.orgel.2019.04.040

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Memristive characteristic of an amorphous Ga-Sn-O thin-film device2019

    • Author(s)
      Sugisaki Sumio、Matsuda Tokiyoshi、Uenuma Mutsunori、Nabatame Toshihide、Nakashima Yasuhiko、Imai Takahito、Magari Yusaku、Koretomo Daichi、Furuta Mamoru、Kimura Mutsumi
    • Journal Title

      Scientific Reports

      Volume: 9 Issue: 1 Pages: 2757-2757

    • DOI

      10.1038/s41598-019-39549-9

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Influence of a SiO2 passivation on electrical properties and reliability of In-W-Zn-O thin-film transistor2018

    • Author(s)
      Koretomo Daichi、Hashimoto Yuta、Hamada Shuhei、Miyanaga Miki、Furuta Mamoru
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 58 Issue: 1 Pages: 018003-018003

    • DOI

      10.7567/1347-4065/aae895

    • NAID

      210000135181

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses2018

    • Author(s)
      Wang Dapeng、Furuta Mamoru
    • Journal Title

      Beilstein Journal of Nanotechnology

      Volume: 9 Pages: 2573-2580

    • DOI

      10.3762/bjnano.9.239

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research
  • [Journal Article] Low-temperature (150 °C) activation of Ar+O2+H2-sputtered In-Ga-Zn-O for thin-film transistors2018

    • Author(s)
      Aman S. G. Mehadi、Magari Yusaku、Shimpo Kenta、Hirota Yuya、Makino Hisao、Koretomo Daichi、Furuta Mamoru
    • Journal Title

      Applied Physics Express

      Volume: 11 Issue: 8 Pages: 081101-081101

    • DOI

      10.7567/apex.11.081101

    • NAID

      210000136299

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Influence of Deposition Temperature and Source Gas in PE-CVD for SiO2 Passivation on Performance and Reliability of In?Ga?Zn?O Thin-Film Transistors2018

    • Author(s)
      Aman S. G. Mehadi、Koretomo Daichi、Magari Yusaku、Furuta Mamoru
    • Journal Title

      IEEE Transactions on Electron Devices

      Volume: 65 Issue: 8 Pages: 3257-3263

    • DOI

      10.1109/ted.2018.2841978

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Correlation between passivation film density and reliability of In-Ga-Zn-O thin-film transistors2018

    • Author(s)
      Aman S. G. Mehadi、Furuta Mamoru
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 57 Issue: 8 Pages: 088001-088001

    • DOI

      10.7567/jjap.57.088001

    • NAID

      210000149428

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses2018

    • Author(s)
      Wang Dapeng、Zhao Wenjing、Li Hua、Furuta Mamoru
    • Journal Title

      Materials

      Volume: 11 Issue: 4 Pages: 559-559

    • DOI

      10.3390/ma11040559

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research
  • [Journal Article] Carrier Generation Mechanism and Origin of Subgap States in Ar- and He-Plasma-Treated In?Ga?Zn?O Thin Films2017

    • Author(s)
      Magari Yusaku、Makino Hisao、Furuta Mamoru
    • Journal Title

      ECS Journal of Solid State Science and Technology

      Volume: 6 Issue: 8 Pages: Q101-Q107

    • DOI

      10.1149/2.0031709jss

    • Related Report
      2017 Research-status Report
    • Peer Reviewed / Open Access
  • [Journal Article] (Invited) Low-Temperature Processed InGaZnO MES-FET for Flexible Device Applications2017

    • Author(s)
      Furuta Mamoru、Magari Yusaku、Hashimoto Shinsuke、Hamada Kenichiro
    • Journal Title

      ECS Transactions

      Volume: 79 Issue: 1 Pages: 43-48

    • DOI

      10.1149/07901.0043ecst

    • Related Report
      2017 Research-status Report
    • Peer Reviewed
  • [Journal Article] Rare-metal-free high-performance Ga-Sn-O thin film transisitor2017

    • Author(s)
      Tokiyoshi Matsuda, Kenta Umeda, Yuta Kato, Daiki Nishimoto, Mamoru Furuta, and Mutsumi Kimura,
    • Journal Title

      Scientific Reports

      Volume: 7 Issue: 1 Pages: 44326-44326

    • DOI

      10.1038/srep44326

    • Related Report
      2017 Research-status Report
    • Peer Reviewed / Open Access / Acknowledgement Compliant
  • [Journal Article] Zinc tin oxide metal semiconductor field effect transistors and their improvement under negative bias (illumination) temperature stress2017

    • Author(s)
      G. T. Dang, T. Kawaharamura, M. Furuta, and M. W. Allen
    • Journal Title

      Appl. Phys. Lett.

      Volume: 110 Issue: 7 Pages: 073502-073502

    • DOI

      10.1063/1.4976196

    • Related Report
      2017 Research-status Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Influence of Interface Traps on the Electrical Properties of Oxide Thin-Film Transistors with Different Channel Thicknesses2017

    • Author(s)
      Jiang Jing Xin、Wang Da Peng、Matsuda Tokiyoshi、Kimura Mutsumi、Liu Sheng Yang、Furuta Mamoru
    • Journal Title

      Journal of Nano Research

      Volume: 46 Pages: 93-99

    • DOI

      10.4028/www.scientific.net/jnanor.46.93

    • Related Report
      2017 Research-status Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Image Sensor with Organic Photoconductive Films by Stacking Red/Green and Blue Components2016

    • Author(s)
      T. Takagi, H. Seo,T. Sakai, H. Ohtake, M. Furuta
    • Journal Title

      Electronic Imaging, Image Sensors and Imaging Systems 2016

      Volume: 4 Issue: 12 Pages: 1-4

    • DOI

      10.2352/issn.2470-1173.2016.12.imse-264

    • Related Report
      2016 Research-status Report
    • Peer Reviewed
  • [Journal Article] High-Performance Top-Gate and Self-Aligned InGaZnO Thin-Film Transistor Using Coatable Organic Insulators Fabricated at 150 °C2016

    • Author(s)
      Tatsuya Toda, Gengo Tatsuoka, Yusaku Magari, and Mamoru Furuta
    • Journal Title

      IEEE Electron Device Letters

      Volume: 37 Issue: 8 Pages: 1006-1009

    • DOI

      10.1109/led.2016.2582319

    • Related Report
      2016 Research-status Report
    • Peer Reviewed
  • [Journal Article] Investigation of Carrier Generation Mechanism in Fluorine-Doped n+-InGaZnO for Self-Aligned Thin-Film Transistors2016

    • Author(s)
      Dapeng Wang, Jingxin Jiang, and Mamoru Furuta
    • Journal Title

      Journal of Display Technology

      Volume: 12 Issue: 3 Pages: 258-262

    • DOI

      10.1109/jdt.2015.2472981

    • Related Report
      2016 Research-status Report
    • Peer Reviewed
  • [Journal Article] Anomalous Increase in Field-Effect Mobility in InGaZnO Thin-Film Transistors Caused by Dry-Etching Damage Through Etch-Stop Layer2016

    • Author(s)
      Daichi Koretomo, Tatsuya Toda, Tokiyoshi Matsuda, Mutsumi Kimura, and Mamoru Furuta
    • Journal Title

      IEEE Transaction on Electron Devices

      Volume: 63 Issue: 7 Pages: 2785-2789

    • DOI

      10.1109/ted.2016.2568280

    • Related Report
      2016 Research-status Report
    • Peer Reviewed
  • [Journal Article] Suppression of Negative Gate Bias and Illumination Stress Degradation by Fluorine-Passivated In-Ga-Zn-O Thin-Film Transistors2016

    • Author(s)
      Mamoru Furuta, Jingxin Jiang, Mai Phi Hung, Tatsuya Toda, Dapeng Wang and Gengo Tatsuoka
    • Journal Title

      ECS Journal of Solid State aScience and Technology

      Volume: 5 Issue: 3 Pages: Q88-Q91

    • DOI

      10.1149/2.0131603jss

    • Related Report
      2016 Research-status Report
    • Peer Reviewed / Open Access
  • [Journal Article] Low-Temperature Processed Metal-Semiconductor Field-Effect Transistor with In-Ga-Zn-O/AgOx Schottky Gate2016

    • Author(s)
      Yusaku Magari, Shinsuke Hashimoto, Kenichiro Hamada and Mamoru Furuta
    • Journal Title

      ECS Transactions

      Volume: 75 Issue: 10 Pages: 139-144

    • DOI

      10.1149/07510.0139ecst

    • Related Report
      2016 Research-status Report
    • Peer Reviewed
  • [Journal Article] Low-Temperature Processed and Self-Aligned InGaZnO Thin-Film Transistor with an Organic Gate Insulator for Flexible Device Applications2016

    • Author(s)
      Mamoru Furuta, Tatsuya Toda, Gengo Tatsuoka and Yusaku Magari
    • Journal Title

      ECS Transactions

      Volume: 75 Issue: 10 Pages: 117-122

    • DOI

      10.1149/07510.0117ecst

    • Related Report
      2016 Research-status Report
    • Peer Reviewed
  • [Journal Article] Silver Oxide Schottky Contacts and Metal Semiconductor Field-Effect Transistors on SnO2 thin films2016

    • Author(s)
      Giang T. Dang, Takayuki Uchida, Toshiyuki Kawaharamura, Mamoru Furuta, Adam R. Hyndman, Rodrigo Martinez, Shizuo Fujita, Roger J. Reeves, Martin W. Allen
    • Journal Title

      Applied Physics Express

      Volume: 9 Issue: 4 Pages: 041101-041101

    • DOI

      10.7567/apex.9.041101

    • NAID

      210000137840

    • Related Report
      2016 Research-status Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Self-heating induced instability of oxide thin film transistors under dynamic stress2016

    • Author(s)
      Kahori Kise, Mami N. Fujii, Satoshi Urakawa, Haruka Yamazaki, Emi Kawashima, Shigekazu Tomai, Koki Yano, Dapeng Wang, Mamoru Furuta, Yasuaki Ishikawa, and Yukiharu Uraoka
    • Journal Title

      Applied Physics Letters

      Volume: 108 Issue: 2 Pages: 023501-023501

    • DOI

      10.1063/1.4939861

    • Related Report
      2016 Research-status Report
    • Peer Reviewed / Open Access
  • [Presentation] ヘテロ接合チャネルによるInGaZnO薄膜トランジスタの高移動度・高信頼性化2019

    • Author(s)
      古田 守
    • Organizer
      応用物理学会春季学術講演会
    • Related Report
      2018 Annual Research Report
    • Invited
  • [Presentation] デバイスシミュレーションによるIn-Ga-Zn-O/AgxO接合型ショットキーダイオードの特性解析2019

    • Author(s)
      濵田 賢一朗
    • Organizer
      応用物理学会春季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] Ar+O2+H2スパッタIInGaZnOx によるSchottkyダイオード特性向上2019

    • Author(s)
      曲 勇作
    • Organizer
      応用物理学会春季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] Effect of channel thickness on electrical performance of IGZO thin film transistor with heterogeneous channel2019

    • Author(s)
      濱田 秀平
    • Organizer
      15th International Thin-Film Transistor conference (ITC2019)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Low-temperature Processed InGaZnOx TFT with an Organic Gate Insulator2018

    • Author(s)
      Mamoru Furuta
    • Organizer
      5th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE 2018)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] ヘテロ接合チャネルIGZO TFTの特性・信頼性2018

    • Author(s)
      古田 守
    • Organizer
      第2回酸化物半導体討論会
    • Related Report
      2018 Annual Research Report
    • Invited
  • [Presentation] Low-temperature activation of Ar+O2+H2 sputtered InGaZnOx film followed by thermal annealing2018

    • Author(s)
      Mamoru Furuta
    • Organizer
      4th E-MRS & MRS-J Bilateral Symposium 2018 (7th International Symposium on Transparent on Conductive Materials (TCM2018))
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Low-temperature activation method for InGaZnOx thin-film transistors2018

    • Author(s)
      Mamoru Furuta
    • Organizer
      ECS and SMEQ Joint International Meeting
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Ar+O2+H2スパッタによるInGaZnO薄膜トランジスタの低温形成2018

    • Author(s)
      古田 守
    • Organizer
      第79回応用物理学会秋季学術講演会シンポジウム
    • Related Report
      2018 Annual Research Report
  • [Presentation] フレキシブルデバイスに向けた酸化物薄膜トランジスタの低温プロセス2018

    • Author(s)
      古田 守
    • Organizer
      第79回応用物理学会秋季学術講演会シンポジウム
    • Related Report
      2018 Annual Research Report
    • Invited
  • [Presentation] Mobility enhancement of InGaZnOx thin-film transistor by hetero-channel with a different composition2018

    • Author(s)
      Mamoru Furuta
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM2018)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 酸化物半導体InGaZnOx薄膜トランジスタの特性制御2018

    • Author(s)
      古田 守
    • Organizer
      シリコン材料・デバイス研究会(SDM)
    • Related Report
      2018 Annual Research Report
    • Invited
  • [Presentation] Device simulation study on carrier transport in hetero-junction channel In-Ga-Zn-O thin film transistor2018

    • Author(s)
      是友 大地
    • Organizer
      7th International Symposium on Transparent Conductive Materials (TCM2018)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] XPS analysis of silver-oxide films deposited by reactive sputtering2018

    • Author(s)
      曲 勇作
    • Organizer
      7th International Symposium Transparent Conductive Materials (TCM2018)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Activation and Defect Reduction of Hydrogenated InGaZnOx Thin Film Transistor at Low Temperature (150 °C)2018

    • Author(s)
      S G Mehadi Aman
    • Organizer
      Solid State Devices and Materials (SSDM2019)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Ar+O2+H2スパッタInGaZnOx によるSchottkyダイオード特性向上2018

    • Author(s)
      曲 勇作
    • Organizer
      応用物理学会学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] Analysis of carrier transport in high-mobility InGaZnOx-hetero-channel thin-film transistor2018

    • Author(s)
      是友 大地
    • Organizer
      The 18th International Meeting on Information Display (IMID2018)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] InGaZnOスパッタ成膜時における水素がサブギャップ準位および電気特性に与える影響2018

    • Author(s)
      神寳 健太
    • Organizer
      第13回応用物理学会中国四国支部講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] Effect of Deposition Temperature and Source Gas Chemistry in PE-CVD SiO2 Passivation on InGaZnO TFTs2018

    • Author(s)
      S G Mehadi Aman
    • Organizer
      THE 25th INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] InGaZnOxヘテロチャネルによる薄膜トランジスタ2018

    • Author(s)
      東 龍之介
    • Organizer
      シリコン材料・デバイス研究会(SDM)
    • Related Report
      2018 Annual Research Report
  • [Presentation] InGaZnOX/AgOx酸化物ヘテロSchottky界面の起源とフレキシブルデバイス応用2018

    • Author(s)
      曲 勇作
    • Organizer
      シリコン材料・デバイス研究会(SDM)
    • Related Report
      2018 Annual Research Report
  • [Presentation] InGaZnOxヘテロチャネルによる薄膜トランジスタの高性能・高信頼性化2018

    • Author(s)
      東 龍之介
    • Organizer
      応用物理学会学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] In-W-Zn-Oチャネルによる薄膜トランジスタの高移動度化とその信頼性2018

    • Author(s)
      是友 大地
    • Organizer
      応用物理学会学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] InGaZnO/AgOX酸化物ヘテロ界面によるショットキー特性評価2018

    • Author(s)
      曲 勇作
    • Organizer
      応用物理学会学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] 酸化物薄膜トランジスタの光バイスストレス下における信頼性劣化メカニズム2017

    • Author(s)
      古田 守
    • Organizer
      日本学術振興会 半導体界面制御技術第154委員会 第104回研究会
    • Related Report
      2017 Research-status Report
    • Invited
  • [Presentation] Low-temperature Processed InGaZnO MES-FET for Flexible Device Applications2017

    • Author(s)
      Mamoru Furuta, S. Hashimoto, K. Hamada, and Y. Magari
    • Organizer
      International conference on ULSI and TFT
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research / Invited
  • [Presentation] Effect of deposition temperature of InGaZnOx channel on electrical properties and reliability of thin-film transistors2017

    • Author(s)
      Mamoru Furuta, H. Tanaka, and R. Higashi
    • Organizer
      The 17th International Meeting on Information Displays (IMID2017)
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research
  • [Presentation] Enhancement of Reliability for In?Ga?Zn?O Thin-Film-Transistors by TEOS-based SiO2 Passivation2017

    • Author(s)
      S G Mehadi Aman, 是友大地, 田中宏怜, 古田守
    • Organizer
      The 17th International Meeting on Information Displays (IMID2017)
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research
  • [Presentation] InGaZnO/AgOx Metal-Semiconductor Field Effect Transistor for Flexible Device Applications2017

    • Author(s)
      M. Furuta, S. Hashimoto, Y. Magari, K. Hamada, G. T. Dang, and M. W. Allen
    • Organizer
      Eurodisplay2017
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research
  • [Presentation] Reliability and DC performance of InGaZnO Thin-Film Transistors with TEOS-based SiO2 Stack Passivation2017

    • Author(s)
      S G Mehadi Aman, 是友大地, 田中宏怜, 古田守
    • Organizer
      Eurodisplay2017
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research
  • [Presentation] XPS Analysis of Carrier Generation Mechanism in He- and Ar-Plasma-Treated InGaZnO2017

    • Author(s)
      曲勇作, 牧野久雄, 古田守
    • Organizer
      29th International Conference on Defects in Semiconductor
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research
  • [Presentation] 高移動度組成InGaZnO薄膜トランジスタの特性制御2017

    • Author(s)
      東龍之介, 田中宏怜, 古田守, 髙橋誠一郎, 八島勇
    • Organizer
      応用物理学会 中国四国支部 合同学術講演会
    • Related Report
      2017 Research-status Report
  • [Presentation] AgOX/InGaZnOショットキー接合形成に向けた反応性スパッタ法によるAgOXの形成と物性評価2017

    • Author(s)
      橋本慎輔, 曲勇作, 濵田賢一朗, 古田守
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Related Report
      2017 Research-status Report
  • [Presentation] HeおよびArプラズマによるInGaZnOx導電層形成メカニズムと自己整合型トランジスタ応用2017

    • Author(s)
      曲勇作, 牧野久雄, 古田守
    • Organizer
      第14回薄膜材料デバイス研究会
    • Related Report
      2017 Research-status Report
  • [Presentation] In-Ga-Zn-O成膜温度が薄膜トランジスタ特性および信頼性に及ぼす影響2017

    • Author(s)
      田中宏怜, 東龍之介, 古田守
    • Organizer
      第14回薄膜材料デバイス研究会
    • Related Report
      2017 Research-status Report
  • [Presentation] InGaZnO/AgOX酸化物ヘテロ界面によるショットキー特性評価2017

    • Author(s)
      曲勇作, 橋本慎輔, 濵田賢一朗, 古田守
    • Organizer
      第65回応用物理学会春季学術講演会
    • Related Report
      2017 Research-status Report
  • [Presentation] InWZnOチャネルによる薄膜トランジスタの高移動度化とその信頼性2017

    • Author(s)
      是友大地, 橋本優太, 濱田秀平, 宮永美紀, 古田守
    • Organizer
      第65回応用物理学会春季学術講演会
    • Related Report
      2017 Research-status Report
  • [Presentation] InGaZnOxヘテロチャネルによる薄膜トランジスタの高移動度・高信頼性化2017

    • Author(s)
      東龍之介, 田中宏怜, 是友大地, 古田守, 髙橋誠一郎, 八島勇
    • Organizer
      第65回応用物理学会春季学術講演会
    • Related Report
      2017 Research-status Report
  • [Presentation] Low-temperature (150℃) Processed Self-aligned InGaZnO Hybrid Thin-film Transistor with an Organic Gate Insulator2016

    • Author(s)
      M. Furuta, Y. Krieg, G. Tatsuoka, S G Mehadi Aman, Y. Hirota, and N. Fruehauf
    • Organizer
      International Display Workshops (IDW2016)
    • Place of Presentation
      Fukuoka, Japan
    • Year and Date
      2016-12-08
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research
  • [Presentation] 高移動度・高信頼性酸化物半導体In-W-Zn-Oの薄膜トランジスタ応用2016

    • Author(s)
      橋本優太、是友大地、綿谷研一、宮永美紀、粟田 英章、古田守
    • Organizer
      薄膜材料デバイス研究会
    • Place of Presentation
      京都、日本
    • Year and Date
      2016-10-21
    • Related Report
      2016 Research-status Report
  • [Presentation] Influence of Carrier Concentration at Front- and Back-channel on Transfer Characteristics of Bottom-Gate IGZO Thin-Film Transistors2016

    • Author(s)
      D. Koretomo, T. Toda, T. Matsuda, M. Kimura, and M. Furuta
    • Organizer
      Electrochemical Society(ECS PRiME2016)
    • Place of Presentation
      Hawaii, USA
    • Year and Date
      2016-10-05
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research
  • [Presentation] Low-Temperature Processed Metal-Semiconductor Field-Effect Transistor with In-Ga-Zn-O/AgOx Schottky Gate2016

    • Author(s)
      Y. Magari, S. Hashimoto, K. Hamada, and M. Furuta
    • Organizer
      Electrochemical Society(ECS PRiME2016)
    • Place of Presentation
      Hawaii, USA
    • Year and Date
      2016-10-05
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research
  • [Presentation] Low-temperature Processed and Self-aligned InGaZnOx TFT with an Organic Gate Insulator for Flexible Devices2016

    • Author(s)
      M. Furuta, T. Toda, G. Tatsuoka, and Y. Magari
    • Organizer
      Electrochemical Society(ECS PRiME2016)
    • Place of Presentation
      Hawaii, USA
    • Year and Date
      2016-10-04
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research / Invited
  • [Presentation] Low-Temperature (150℃) Processed Self-Aligned InGaZnO/Organic Hybrid Thin-Film Transistor for Flexible Devices2016

    • Author(s)
      G. Tatsuoka, T. Toda, Y. Magari, and M. Furuta
    • Organizer
      International Meeting on Information Display (IMID2016)
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2016-08-25
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research
  • [Presentation] High-mobility oxide thin-film transistors with an In-W-Zn-O channel2016

    • Author(s)
      M. Furuta, D. Koretomo, Y. Hashimoto, K. Watatani, M. Miyanaga, and H. Awata
    • Organizer
      International Meeting on Information Display (IMID2016)
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2016-08-24
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research / Invited
  • [Presentation] デバイスシミュレーションによるIn-Ga-Zn-O薄膜トランジスタのキャリア輸送メカニズムの解析2016

    • Author(s)
      是友大地、戸田達也、松田時宜、木村睦、古田守
    • Organizer
      シリコンデバイス研究会
    • Place of Presentation
      沖縄、日本
    • Year and Date
      2016-04-08
    • Related Report
      2016 Research-status Report
  • [Remarks] 酸化物半導体による透明エレクトロニクスに関する研究紹介

    • URL

      http://www.env.kochi-tech.ac.jp/m-furuta/research01.html

    • Related Report
      2018 Annual Research Report

URL: 

Published: 2016-04-21   Modified: 2021-01-27  

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