| Budget Amount *help |
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2018: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2017: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2016: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
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| Outline of Final Research Achievements |
The aim of this research is to achieve transparent circuits on organic photosensitive materials whose temperature should be maintained below 150 ℃. Main two achievements of this research are 1) proposing an Ar+O2+H2 sputtering for oxide semiconductors to reduce defects through low-temperature annealing at around 150 ℃, 2) high-k alumina dielectric is formed at room temperature by an anodization of aluminum film.
By applying the results to the IGZO thin-film transistor, low-power and high performance thin-film transistors were successfully demonstrated at a maximum processing temperature of 150 ℃. The achievements will open new doors for transparent and flexible electronics applications.
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