Development of Ultra-High Performance Sb-Based Teraherts Transistors

• Project/Area Number: 16K06316
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Tokyo University of Science
• Principal Investigator: Fujishiro Hiroki 東京理科大学, 基礎工学部電子応用工学科, 教授 (60339132)
• Co-Investigator(Kenkyū-buntansha): 町田 龍人 東京理科大学, 基礎工学部電子応用工学科, 助教 (50806560) ; 藤川 紗千恵 東京電機大学, 工学部, 助教 (90550327)
• Project Period (FY): 2016-04-01 – 2019-03-31
• Project Status: Completed (Fiscal Year 2018)
• Budget Amount: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000); Fiscal Year 2018: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000); Fiscal Year 2017: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000); Fiscal Year 2016: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
• Keywords: テラヘルツ領域 / 高電子移動度トランジスタ / HEMT / InGaSb / 電子有効質量 / 格子歪 / 電子移動度 / 遮断周波数 / 極限性能トランジスタ / InSb / ラフネス散乱 / 量子補正モンテカルロシミュレーション / 電子デバイス・機器 / テラヘルツ/赤外材料・素子 / 低消費電力・高エネルギー密度 / 電子・電気材料

Outline of Final Research Achievements

We have fabricated the HEMT using the GaInSb quantum well QW channel, in which the electron effective mass me* has been chosen so as to get the larger electron density Ns and the higher electron mobility μe simultaneously under the roughness scattering.
The stepped buffer has allowed to increase Ns keeping μe high. Consequently the Ga0.22In0.78Sb QW has showed μe = 15,500 cm2/Vs and Ns = 2.05×1012 cm-2. The Ga0.22In0.78Sb HEMT has been fabricated. The maximum fT has been 214 GHz（Lg = 40 nm）, which has been the highest value ever reported for the GaInSb transistors.

Academic Significance and Societal Importance of the Research Achievements

テラヘルツ領域は未踏センシング、次世代通信、極限コンピューティングなどの帯域として工業・情報通信・医療・バイオ・農業・セキュリティなど様々な応用が見込まれている。本研究はテラヘルツ領域での共通の基盤技術の一つとして、テラヘルツ領域で動作するトランジスタの開発を目的とした。本研究で考案した歪ステップバッファは、Sb系QWの高いμeを維持しながらN sを増加できる画期的な方法であり、試作したHEMTで214 GHzを得た。この成果は様々なテラヘルツ応用の発展に貢献するものと考えられる。

Research Products

• [Journal Article] ミリ波・テラヘルツ波帯無線通信用電子デバイスの研究開発 (2018)
  • Author(s): 渡邊 一世,山下 良美,遠藤 聡,原 紳介,笠松 章史, 吉田 智洋,井上 和孝,中田 健,眞壁 勇夫,磯野 恭佑,岡 直希,原田 義彬,竹内 淳,町田 龍人,藤代 博記
  • Journal Title: 電気学会電子デバイス研究会技術報告 Volume: EDD-18
• [Journal Article] アンチモン系トランジスタの開発 (2017)
  • Author(s): 藤代 博記、磯野 恭佑、高橋 択斗、原田 義彬、岡 直希、竹内 淳、藤澤 由衣、藤川 紗千恵、町田 龍人、渡邊 一世、山下 良美、遠藤 聡、原 紳介、笠松 章史
  • Journal Title: 電子情報通信学会技術研究報告 Volume: 117 Pages: 33-36
• [Journal Article] Comparative study on noise characteristics of As and Sb-based high electron mobility transistors (2017)
  • Author(s): T.Takahashi, S.Hatsushiba, S.Fujikawa, H.I.Fujishiro
  • Journal Title: Physica Status Solidi A-Applications and Materials Science Volume: 214 Issue: 3 Pages: 1600599-1600599
  • DOI: 10.1002/pssa.201600599
  • Peer Reviewed / Open Access / Acknowledgement Compliant
• [Presentation] Improved Electron Transport Properties of Ga1-xInxSb Quantum Well Channel Using Strained-Al0.40In0.60Sb/Al1-yInySb Stepped Buffer (2019)
  • Author(s): M. Hiraoka, Y. Endoh, K. Osawa, N. Kishimoto, T. Hayashi, R. Machida, A. Endoh, and H. I. Fujishiro
  • Organizer: Compound Semiconductor Week 2019 (CSW2019) (16th International Symposium on Compound Simiconductor (ISCS2019) & 31th International Conference on Indium Phosphide and Related Materials (IPRM 2019))
  • Int'l Joint Research
• [Presentation] Effects of Channel Scaling on Electron Transport Properties of Sb-based HEMTs (2019)
  • Author(s): N. Kishimoto, Y. Endoh, T. Hayashi, M. Hiraoka, R. Machida, A. Endoh, and H. I. Fujishiro
  • Organizer: Compound Semiconductor Week 2019 (CSW2019) (16th International Symposium on Compound Simiconductor (ISCS2019) & 31th International Conference on Indium Phosphide and Related Materials (IPRM 2019))
  • Int'l Joint Research
• [Presentation] GaInSbチャネルHEMT構造のゲート・チャネル間距離パラメータが電気的特性に与える影響 (2019)
  • Author(s): 岸本 尚之, 遠藤 勇輝, 林 拓也, 平岡 瑞穂, 町田 龍人, 遠藤 聡, 藤代 博記
  • Organizer: 第66回応用物理学会春季学術講演会
• [Presentation] Electron Transport Properties of Novel Ga1-xInxSb Quantum Well Structures with Strained Al0.4In0.6Sb/Al0.3In0.7Sb Stepped Buffer (2018)
  • Author(s): K. Osawa, M. Hiraoka, T. Kishi, Y. Endoh, J. Takeuchi, R. Machida and H. I. Fujishiro
  • Organizer: Compound Semiconductor Week 2018 (CSW2018) (15th International Symposium on Compound Simiconductor (ISCS2018) & 30th International Conference on Indium Phosphide and Related Materials (IPRM 2018))
  • Int'l Joint Research
• [Presentation] Comprehensive Study on GaxIn1-xSb High Electron Mobility Transistors Considering Interface Roughness Scattering (2018)
  • Author(s): T. Suzuki, Y. Fujisawa, S. Kawamura, K. Kumasaka, R. Machida, and H. I. Fujishiro
  • Organizer: Compound Semiconductor Week 2018 (CSW2018) (15th International Symposium on Compound Simiconductor (ISCS2018) & 30th International Conference on Indium Phosphide and Related Materials (IPRM 2018))
  • Int'l Joint Research
• [Presentation] ミリ波・テラヘルツ波帯無線通信用電子デバイスの研究開発 (2018)
  • Author(s): 渡邊 一世,山下 良美,遠藤 聡,原 紳介,笠松 章史, 吉田 智洋,井上 和孝,中田 健,眞壁 勇夫,磯野 恭佑,岡 直希,原田 義彬,竹内 淳,町田 龍人,藤代 博記
  • Organizer: 電気学会 電子デバイス研究会
  • Invited
• [Presentation] アンチモン系トランジスタの開発 (2017)
  • Author(s): 藤代 博記、磯野 恭佑、高橋 択斗、原田 義彬、岡 直希、竹内 淳、藤澤 由衣、藤川 紗千恵、町田 龍人、渡邊 一世、山下 良美、遠藤 聡、原 紳介、笠松 章史
  • Organizer: 電子デバイス研究会-ミリ波・テラヘルツ波デバイス・システム-
  • Invited
• [Presentation] LT-AlSb成長がInSb HEMT構造の電気的特性に与える影響 (2017)
  • Author(s): 遠藤 勇輝, 原田 義彬, 竹内 淳, 岩木 拓也, 町田 龍人, 藤代 博記
  • Organizer: 第78回応用物理学会秋季学術講演会
• [Presentation] InSb-based HEMTs fabricated by using two-step-recessed gate procedure (2017)
  • Author(s): N. Oka, K. Isono, Y. Harada, J. Takeuchi, T. Iwaki, Y. Endoh, I. Watanabe, Y. Yamashita, A. Endoh, S. Hara, R. Machida, A. Kasamatsu and H. I. Fujishiro
  • Organizer: 12th Topical Workshop on Heterostructure Microelectronics (TWHM2017)
  • Int'l Joint Research
• [Presentation] Electron Transport Properties of InSb/Ga0.35In0.65Sb Composite Channel Structure (2017)
  • Author(s): S. Fujikawa, T. Iwaki, Y. Harada, J.Takeuchi, Y.Endoh, I. Watanabe, Y. Yamashita, A. Endoh, S. Hara, and A. Kasamatsu, H. I. Fujishiro
  • Organizer: Compound Semiconductor Week 2017 (CSW2017) (14th International Symposium on Compound Simiconductor (ISCS2017) & 29th International Conference on Indium Phosphide and Related Materials (IPRM 2017))
  • Int'l Joint Research
• [Presentation] Monte Carlo Study on Electron Transport Properties of GaxIn1-xSb HEMT Structures Considering Roughness Scattering (2017)
  • Author(s): Y. Fujisawa, T. Takahashi, S. Kawamura, S. Fujikawa, and H.I. Fujishiro
  • Organizer: Compound Semiconductor Week 2017 (CSW2017) (14th International Symposium on Compound Simiconductor (ISCS2017) & 29th International Conference on Indium Phosphide and Related Materials (IPRM 2017))
  • Int'l Joint Research
• [Presentation] Research and development of InP, GaN and InSb-based HEMTs and MMICs for terahertz-wave wireless communications (2016)
  • Author(s): I. Watanabe, Y. Yamashita, A. Endoh, S. Hara, A. Kasamatsu, I. Hosako,H. Hamada, T. Kosugi, M. Yaita, A. E. Moutaouakil, H. Matsuzaki, O. Kagami,T. Takahashi, Y. Kawano, Y. Nakasha, N. Hara,D. Tsuji, K. Isono, S. Fujikawa, and H. I. Fujishiro
  • Organizer: 2016 IEEE Compound Semiconductor IC Symposium
  • Place of Presentation: Doubletree by Hilton, Austin, TX, USA
  • Year and Date: 2016-10-23
  • Int'l Joint Research / Invited
• [Presentation] InSb-based HEMTwith Over 300 GHz-fT using Al0.25In0.75Sb/Al0.15In0.85Sb stepped buffer layer for strain reduction (2016)
  • Author(s): S. Fujikawa, K. Isono, Y. Harada, I. Watanabe, Y. Yamashita, A. Endoh, S. Hara, A. Kasamatsu, and H. I. Fujishiro
  • Organizer: 19th International Conference on Molecular Beam Epitaxy (MBE2016)
  • Place of Presentation: Montpellier, France
  • Year and Date: 2016-09-04
  • Int'l Joint Research
• [Presentation] Electron Transport Properties of InSb/GaInSb Composite Channel (2016)
  • Author(s): S. Fujikawa, J. Takeuchi, Y. Harada, and H. I. Fujishiro
  • Organizer: 19th International Conference on Molecular Beam Epitaxy (MBE2016),
  • Place of Presentation: Montpellier, France
  • Year and Date: 2016-09-04
  • Int'l Joint Research
• [Presentation] Electron transport properties of novel InSb/GaInSb composite channel high electron mobility transistor structures (2016)
  • Author(s): J. Takeuchi, S. Fujikawa, Y. Harada and H. I. Fujishiro
  • Organizer: 35rd Electronic Materials Symposium (EMS35)
  • Place of Presentation: Laforet Biwako, Shiga
  • Year and Date: 2016-07-06
  • Int'l Joint Research
• [Presentation] InSb HEMT with over 300 GHz-fT using stepped buffer layer for strain reduction (2016)
  • Author(s): S. Fujikawa, K. Isono, Y. Harada, I. Watanabe, Y. Yamashita, A. Endoh, S. Hara, A. Kasamatsu, and H. I. Fujishiro
  • Organizer: 35rd Electronic Materials Symposium (EMS35)
  • Place of Presentation: Laforet Biwako, Shiga
  • Year and Date: 2016-07-06
  • Int'l Joint Research
• [Presentation] Comparative Study on Noise Characteristics of As and Sb-based HEMTs (2016)
  • Author(s): Takuto Takahashi, Shota Hatsushiba, Sachie Fujikawa, Hiroki I. Fujishiro
  • Organizer: International Conference on Indium Phosphide and Related Materials (IPRM) 2016
  • Place of Presentation: Toyama, Japan
  • Year and Date: 2016-06-26
  • Int'l Joint Research
• [Presentation] InSb-based HEMT with Over 300 GHz-fT using Evaporated SiOx Film (2016)
  • Author(s): K. Isono, D. Tsuji, T. Taketsuru, S. Fujikawa, I. Watanabe Y. Yamashita, A. Endoh, S. Hara, A. Kasamatsu, and H. I. Fujishiro
  • Organizer: International Conference on Indium Phosphide and Related Materials (IPRM) 2016
  • Place of Presentation: Toyama, Japan
  • Year and Date: 2016-06-26
  • Int'l Joint Research