Investigation of Ferroelectric Property Based on Nitride/Oxide Stack Structure and Its Application for Diamond FET

• Project/Area Number: 16K06330
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: National Institute for Materials Science
• Principal Investigator: Imura Masataka 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 主任研究員 (80465971)
• Research Collaborator: KOIDE Yasuo
• Project Period (FY): 2016-04-01 – 2019-03-31
• Project Status: Completed (Fiscal Year 2018)
• Budget Amount: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000); Fiscal Year 2018: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000); Fiscal Year 2017: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000); Fiscal Year 2016: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
• Keywords: 窒化物半導体 / ダイヤモンド / 電界効果トランジスタ / 強誘電体 / パワースイッチングデバイス / MOCVD法 / MPCVD法 / スパッタ堆積法 / 電子デバイス・電子機器 / 高周波パワーデバイス / 窒化アルミニウム / 酸化アルミニウム / 有機金属化合物気相成長法 / ノーマリオフ型 / 酸化物半導体

Outline of Final Research Achievements

Diamond is promising wide-gap semiconductor for the power devices operated under the hash environment owing to its excellent material property. In this study, the fabrication technique of nitride-based single layer and nitride/oxide stack layer structures on hydrogen-terminated diamond with surface hole conductive layer was explored as the first step. Next, the insulating and ferroelectric properties of these structures were investigated. Finally, these structures were adopted on diamond FET. As the results, the diamond FETs with on current (~-180 mA/mm) and breakdown voltage (~250 V) were successfully obtained.

Academic Significance and Societal Importance of the Research Achievements

パワースイッチングデバイス用に開発されていたダイヤモンドFETでは、大電流動作・高耐圧(低リーク電流)特性を得るために重要な高いキャパシタンス値と高いエネルギーギャップ値を同時に満たすデバイス構造を適応するのが困難であった。本研究で検討を行ったAlN及びAlN/Al2O3積層構造は、高いキャパシタンス値と高いエネルギーギャップ値を同時に得ることができ、これらの構造を用いたFETは、大電流動作・高耐圧特性を有す可能性が高いことが明らかとなった。また本研究対象であるダイヤモンドFETは、自動車・無線通信・宇宙開発等の幅広い分野で応用が可能であり、本研究はその礎を築くものに位置付けられる。

Research Products

• [Journal Article] Surface and Bulk Electronic Structures of Unintentionally and Mg Doped In0.7Ga0.3N Epilayer by Hard X-ray Photoelectron Spectroscopy (2018)
  • Author(s): M. Imura, S. Tsuda, H. Takeda, T. Nagata, R. G. Banal, H. Yoshikawa, A. Yang, Y. Yamashita, K. Kobayashi, Y. Koide, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, and Y. Nanishi
  • Journal Title: J. Appl. Phys. Volume: 123 Issue: 9 Pages: 095701-1
  • DOI: 10.1063/1.5016574
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Annealing effects on hydrogenated diamond NOR logic circuits (2018)
  • Author(s): Jiangwei Liu, Hirotaka, Oosato, Meiyong Liao, Masataka Imura, Eiichiro Watanabe, Yasuo Koide
  • Journal Title: Applied Physics Letters Volume: 112 Issue: 15 Pages: 153501-153501
  • DOI: 10.1063/1.5022590
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] A density functional study of the effect of hydrogen on electronic properties and band discontinuity at anatase TiO2/diamond interface (2018)
  • Author(s): Kongping Wu, Meiyong Liao, Liwen Sang, Jiangwei Liu, Masataka Imura, Haitao Ye, Yasuo Koide
  • Journal Title: Journal of Applied Physics Volume: 123 Issue: 16 Pages: 161599-161599
  • DOI: 10.1063/1.5002176
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Effect of Boron Incorporation on Structural and Optical Properties of AlN Layers Grown by Metal-Organic Vapor Phase Epitaxy (2018)
  • Author(s): M. Imura, Y. Ota, R.G. Banal, M. Liao, Y. Nakayama, M. Takeguchi, and Y. Koide
  • Journal Title: Physica Status Solidi A Volume: 215 Issue: 21 Pages: 1800282-8
  • DOI: 10.1002/pssa.201800282
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Direct observation of inversion capacitance in p-type diamond MOS capacitors with an electron injection layer (2018)
  • Author(s): T. Matsumoto, H. Kato, T. Makino, M. Ogura, D. Takeuchi, S. Yamasaki, M. Imura, A. Ueda, T. Inokuma, and N. Tokuda
  • Journal Title: Japanese Journal of Applied Physics Volume: 57 Issue: 4S Pages: 04FR01-04FR01
  • DOI: 10.7567/jjap.57.04fr01
  • NAID: 210000149007
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Effect of Sputter Deposition Atmosphere of AlN on the Electrical Properties of Hydrogen-Terminated Diamond Field Effect Transistor with AlN/Al2O3 Stack Gate (2017)
  • Author(s): R.G. Banal, M. Imura, H. Ohata, M. Liao, J. Liu, and Y. Koide
  • Journal Title: Physica Status Solidi A Volume: 214 Issue: 11 Pages: 1700463-1700463
  • DOI: 10.1002/pssa.201700463
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Logic Circuits With Hydrogenated Diamond Field-Effect Transistors (2017)
  • Author(s): J. Liu, H. Ohsato, M. Liao, M. Imura, E. Watanabe, and Y. Koide
  • Journal Title: Ieee Electron Device Letters Volume: 38 Issue: 7 Pages: 922-925
  • DOI: 10.1109/led.2017.2702744
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Deposition of TiO 2/Al 2O 3bilayer on hydrogenated diamond for electronic devices: Capacitors, field-effect transistors, and logic inverters (2017)
  • Author(s): J.W. Liu, M.Y. Liao, M. Imura, R.G. Banal, and Y. Koide
  • Journal Title: Journal of Applied Physics Volume: 121 Issue: 22 Pages: 224502-11
  • DOI: 10.1063/1.4985066
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111) interface hole channel (2017)
  • Author(s): Masataka Imura, Ryan G. Banal, Meiyong Liao, Jiangwei Liu, Takashi Aizawa, Akihiro Tanaka, Hideo Iwai, Takaaki Mano, and Yasuo Koide
  • Journal Title: J. Appl. Phys. Volume: 121 Issue: 2 Pages: 025702-025702
  • DOI: 10.1063/1.4972979
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Surface and Bulk Electronic Structures of Heavily Mg-doped InN Epilayer by Hard X-ray Photoelectron Spectroscopy (2017)
  • Author(s): M. Imura, S. Tsuda, T. Nagata, R. G. Banal, H. Yoshikawa, A. Yang, Y. Yamashita, K. Kobayashi, Y. Koide, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, and Y. Nanishi
  • Journal Title: J. Appl. Phys. Volume: 121 Issue: 9 Pages: 095703-095703
  • DOI: 10.1063/1.4977201
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Structural properties and transfer characteristics of sputter deposition AlN and atomic layer deposition Al2O3 bilayer gate materials for H-terminated diamond field effect transistors (2016)
  • Author(s): Ryan G. Banal, Masataka Imura, Jiangwei Liu, and Yasuo Koide,
  • Journal Title: J. Appl. Phys. Volume: 120 Issue: 11 Pages: 115307-115307
  • DOI: 10.1063/1.4962854
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] High-k ZrO2/Al2O3 bilayer on hydrogenated diamond: Band configuration, breakdown field, and electrical properties of field-effect transistors (2016)
  • Author(s): J. W. Liu, M. Y. Liao, M. Imura, and Y.Koide
  • Journal Title: J. Appl. Phys. Volume: 120 Issue: 12 Pages: 124504-124504
  • DOI: 10.1063/1.4962851
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Formation Mechanism and Elimination of Small‐Angle Formation Mechanism and Elimination of Small‐Angle Grain Boundary in AlN Grown on (0001) Sapphire Substrate (2016)
  • Author(s): R.G. Banal, M. Imura, Y. Koide
  • Journal Title: INTECH Volume: Chapter3 Pages: 43-58
  • DOI: 10.5772/66177
  • ISBN: 9789535128618, 9789535128625
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Nanometer-thin ALD-Al2O3 for the improvement of structural quality of AlN grown on sapphire substrate by MOVPE (2016)
  • Author(s): Ryan G. Banal, Masataka Imura,1, Daiju Tsuya, Hideo Iwai, and Yasuo Koide
  • Journal Title: Phys. Status Solidi A Volume: 217 Issue: 2 Pages: 1600727-1600727
  • DOI: 10.1002/pssa.201600727
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Presentation] メタルマスクを用いた(111)ダイヤモンド選択成長と水素終端ダイヤモンドFETへの応用 (2019)
  • Author(s): 井村将隆, 大里啓孝, 廖梅勇, 小出康夫
  • Organizer: 第66回応用物理学会春季学術講演会
• [Presentation] III-nitride/diamond heterojunction (2018)
  • Author(s): M. Imura, M. Y. Liao, and Y. Koide
  • Organizer: 4th JST Sakura Science Workshop
  • Int'l Joint Research
• [Presentation] Development of AlN/Diamond heterostructure formation and unique interface property (2018)
  • Author(s): M. Imura, M. Y. Liao, and Y. Koide
  • Organizer: European Materials Research Society (E-MRS) 2018 Fall Meeting
  • Int'l Joint Research / Invited
• [Presentation] Systematic investigation of surface and bulk electronic structures of unintentionally-doped InxGa1-xN (0≦x≦1) epilayers by hard X-ray photoelectron spectroscopy (2018)
  • Author(s): M. Imura, S. Tsuda, T. Nagata, R. G. Banal, H. Yoshikawa, Y. Anli, Y. Yamashita, K. Kobayashi, Y. Koide, T. Yamaguchi, M. Kaneko, T. Araki, and Y. Nanishi
  • Organizer: International Workshop on Nitride Semiconductors 2018 (IWN2018)
  • Int'l Joint Research
• [Presentation] 窒化アルミニウム成膜時のIn Situ測定 (2018)
  • Author(s): 井村将隆
  • Organizer: 第65回応用物理学会春季学術講演会ランチョンセミナー
• [Presentation] 硬X線光電子分光法を用いたInGaN系窒化物半導体の表面ーバルク電子状態評価 (2018)
  • Author(s): 井村将隆, 小出康夫, 荒木努, 名西やすし
  • Organizer: 第10回ナノ構造・エピタキシャル成長講演会
  • Invited
• [Presentation] InGaN系窒化物半導体の表面ーバルク電子状態評価 (2018)
  • Author(s): 井村将隆, 小出康夫, 荒木努, 名西やすし
  • Organizer: 第110回研究会・特別公開シンポジウム 「紫外発光デバイスの最前線と将来展望」
• [Presentation] 硬X線光電子分光法を用いたアンドープInxGa1-xN(0≦x≦1)の表面ーバルク電子状態評価 (2018)
  • Author(s): 井村将隆, 津田俊輔, 長田貴弘, 吉川英樹, 山下良之, 小林啓介, 小出康夫, 山口智広, 荒木努, 名西やすし
  • Organizer: 第37回電子材料シンポジウム
• [Presentation] Mgドーピングによる高In組成InGaNの表面-バルク電子状態変化 (2018)
  • Author(s): 井村将隆, 津田俊輔, 長田貴弘, 山下良之, 吉川英樹, 小林啓介, 小出康夫, 山口智広, 金子昌充, 上松尚, 荒木努, 名西やすし
  • Organizer: 第65回応用物理学会春季学術講演会
• [Presentation] Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111) interface hole channel (2017)
  • Author(s): M. Imura, R. G. Ryan, M. Liao, J. Liu, T. Aizawa, A. Tanaka, H. Iwai, T. Mano, Y. Koide
  • Organizer: The 11th Conference on New Diamond and Nano Carbons (NDNC2017)
  • Int'l Joint Research
• [Presentation] Surface and Bulk Electronic Structures of Heavily Mg-doped InN Epilayer by Hard X-ray Photoelectron Spectroscopy (2017)
  • Author(s): M. Imura, S. Tsuda, T. Nagata, A. L. Yang, Y. Yamashita, H. Yoshikawa,Y. Koide, K. Kobayashi, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, and Y. Nanishi
  • Organizer: 12th International Conference on Nitride Semiconductors (ICNS12)
  • Int'l Joint Research
• [Presentation] Microstructure of Boron-doped AlN Epitaxial Layer Grown by Metal-Organic Vapor Phase Epitaxy (2017)
  • Author(s): M. Imura, Y. Ota, R. G. Banal, and Y. Koide
  • Organizer: 29th International Conference on Defects in Semiconductors (ICDS2017)
  • Int'l Joint Research
• [Presentation] Improvement on electrical properties of H-terminated diamond FETs using sputter deposition AlN/ atomic layer deposition Al2O3 stack gate structure (2017)
  • Author(s): M. Imura, R. G. Banal, J. Liu, M. Liao, and Y. Koide
  • Organizer: 28th International Conference on Diamond and Carbon Materials (ICDCM2017)
  • Int'l Joint Research
• [Presentation] Microstructure of In0.20Ga0.80N nanowires on Si (111) substrate evaluated by aberration-corrected scanning transmission electron microscopy (2017)
  • Author(s): M. Imura, R. G. Banal, Y. Koide, Y. Nakayama, M. Takeguchi, S. Mizutani, T. Tabata, S. Nakagawa, Y. Honda, M. Yamaguchi, and H. Amano
  • Organizer: The 11th International Symposium on Semiconductor Light Emitting Devices (ISSLED2017)
  • Int'l Joint Research
• [Presentation] Microstructure and electrical property of AlN/Diamond(111) heterojunction (2017)
  • Author(s): M. Imura, M. Liao, and Y. Koide
  • Organizer: OIST Diamond WS2017
  • Int'l Joint Research
• [Presentation] III-nitride/diamond hybrid systems (2017)
  • Author(s): M. Imura, M. Liao, and Y. Koide
  • Organizer: 3N-Lab Workshop Tsukuba-Grenoble for Diamond and GaN
  • Int'l Joint Research
• [Presentation] Vacuum-Ultra-Violet Diamond-based Photodetector for high-power excimer lamp (2017)
  • Author(s): M. Imura, M. Liao, and Y. Koide
  • Organizer: International Workshop on UV Materials and Devices 2017 (IWUMD2017)
  • Int'l Joint Research
• [Presentation] Microstructure and Hole Accumulation Mechanism of AlN/Diamond(111) Het erojunctions Prepared by MOVPE (2016)
  • Author(s): M. Imura, R. G. Banal, M. Y. Liao, J. W. Liu, Y. Koide, T. Matsumoto, N. Shibata, Y. Ikuhara
  • Organizer: International Conference on Diamond and Carbon Materials 2016 (ICDCM2016)
  • Place of Presentation: Le Corum, Montpellier, France
  • Year and Date: 2016-09-04
  • Int'l Joint Research
• [Presentation] Structural Property of Boron-doped AlN grown by Metal-Organic Vapor Phase Epitaxy (2016)
  • Author(s): M. Imura, Y. Ota, R. G. Banal, Y. Koide
  • Organizer: International workshop on UV materials and devices (IWUMD-2016)
  • Place of Presentation: Peking University, Beijing, China
  • Year and Date: 2016-07-27
  • Int'l Joint Research / Invited
• [Presentation] MOVPE法により成長させたボロンドープAlNの構造評価 (2016)
  • Author(s): 井村将隆, 太田優一, R. G. Banal, 小出康夫
  • Organizer: 第35回電子材料シンポジウム
  • Place of Presentation: ラフォーレ琵琶湖
  • Year and Date: 2016-07-06