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Development of crystal-grain enlarging process for ultra-fine Cu wiring by strain-energy driving

Research Project

Project/Area Number 16K06793
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Research Field Material processing/Microstructural control engineering
Research InstitutionIbaraki University

Principal Investigator

SASAJIMA Yasushi  茨城大学, 理工学研究科(工学野), 教授 (80187137)

Research Collaborator ONUKI Jin  
Project Period (FY) 2016-04-01 – 2019-03-31
Project Status Completed (Fiscal Year 2018)
Budget Amount *help
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2018: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2017: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2016: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Keywords超微細銅配線 / 粒径粗大化 / 不純物効果 / フェーズフィールド法 / 計算機実験 / 超微細Cu配線 / 粒径増大 / 不純物低減 / 外部応力印加 / 不純物のピン止め効果 / シミュレーション / 結晶粒成長 / 材料組織制御 / 電子・電気材料
Outline of Final Research Achievements

It is essential to enlarge Cu-polycrystal grains uniformly for high-reliable ultra-fine Cu wiring. In the present study, we performed computer experiments by the phase field method to examine the pinning effect and performed actual experiment to access the impurity reducing process. In addition, it is computed whether the further enlargement of Cu grain can be expected when the external process is applied to the system.
The computer experiment of grain growth found the prohibition of crystal grains by the impurity pinning effect. The results showed good accordance with the observation by electron microscopy. The actual experiment by reducing impurities produced Cu wiring with large and uniform Cu grains and reduced the resistivity of the wire drastically. In addition, our computer experiment showed that it can be expected to enlarge the grain radius further by applying external stress to the wire under annealing.

Academic Significance and Societal Importance of the Research Achievements

不純物低減によって粒成長の阻害要因を取り除くことで、極細配線中の銅多結晶粒を一様に粗大化でき、配線抵抗を著しく低減することに成功した。これにより、銅配線の飛躍的な信頼性向上の実現の道を開いた。今後のLSI産業への応用展開が期待できる。

Report

(4 results)
  • 2018 Annual Research Report   Final Research Report ( PDF )
  • 2017 Research-status Report
  • 2016 Research-status Report
  • Research Products

    (6 results)

All 2019 2018 2017

All Journal Article (2 results) Presentation (4 results) (of which Int'l Joint Research: 3 results,  Invited: 1 results)

  • [Journal Article] Effects of Electroplating at Lower Leveler and Suppressor Contents on the Formation of Very Low Resistivity Narrow Cu Interconnects2019

    • Author(s)
      Miyamoto Ryo、Tamahashi Kunihiro、Inami Takashi、Sasajima Yasushi、Onuki Jin
    • Journal Title

      Journal of The Electrochemical Society

      Volume: 166 Issue: 4 Pages: D137-D143

    • DOI

      10.1149/2.0991904jes

    • Related Report
      2018 Annual Research Report
  • [Journal Article] Nano-Structure-Controlled Very Low Resistivity Cu Wires Formed by High Purity and Optimized Additives2018

    • Author(s)
      Onuki Jin、Tamahashi Kunihiro、Inami Takashi、Nagano Takatoshi、Sasajima Yasushi、Ikeda Shuji
    • Journal Title

      IEEE Journal of the Electron Devices Society

      Volume: 6 Pages: 506-511

    • DOI

      10.1109/jeds.2018.2808494

    • Related Report
      2018 Annual Research Report 2017 Research-status Report
  • [Presentation] Grain Coarsening Mechanism of Cu Confined in Ultra-fine Wire2018

    • Author(s)
      Yasushi Sasajima , Takatoshi Nagano and Jin Onuki
    • Organizer
      WCSM-2018 (BIT’s 4th Annual World Congress of SmartMaterials -2018)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Grain Coarsening Mechanism of Cu Confined in Ultra-fine Wire2018

    • Author(s)
      Y. Sasajima, T. Nagano, J. Onuki
    • Organizer
      BIT's 4th Annual World Congress of Smart Materials-2018(WCSM2018)
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research
  • [Presentation] Nano-Structure-Controlled Very Low Resistivity Cu Wires Formed by High Purity and Optimized Additives2017

    • Author(s)
      J. Onuki, K. Tamahashi, T. Inami, T. Nagano, Y. Sasajima, S. Ikeda
    • Organizer
      2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM)
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research / Invited
  • [Presentation] 銅極細配線における粒成長を阻害する不純物効果のフェーズフィールドシミュレーション2017

    • Author(s)
      篠嶋 妥,大貫 仁
    • Organizer
      日本金属学会2017年春期講演大会
    • Place of Presentation
      首都大学東京
    • Related Report
      2016 Research-status Report

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Published: 2016-04-21   Modified: 2020-03-30  

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