| Project/Area Number |
16K13674
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Crystal engineering
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| Research Institution | Nagoya University |
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Principal Investigator |
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| Research Collaborator |
KUSUNOKI Michiko
TERASAWA Tomo-o
MATSUDA Keita
FUKUI Mai
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| Project Period (FY) |
2016-04-01 – 2018-03-31
|
| Project Status |
Completed (Fiscal Year 2017)
|
| Budget Amount *help |
¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2017: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2016: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
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| Keywords | 2次元物質 / 新規二次元物質 / 表面・界面物性 |
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| Outline of Final Research Achievements |
In this study, growth of two-dimensional aluminum carbide was demonstrated. As a result of the first-principles calculation, two-dimensional aluminum carbide (AlCene) was a semiconductor with a indirect gap of about 2.18 eV. On the other hand, highly crystalline and extremely thin aluminum carbide was successfully grown on the SiC (000-1) substrate by the pulsed laser deposition technique. At the interface, the carbon atoms of the topmost SiC surface and the aluminum atoms of the aluminum carbide made bonds, which was revealed by high-resolution transmission electron microscope observations.
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