Room temperature bonding of diamond to Si for power device application and clarification of bonding mechanism

• Project/Area Number: 16K13676
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Crystal engineering
• Research Institution: Osaka City University
• Principal Investigator: Shigekawa Naoteru 大阪市立大学, 大学院工学研究科, 教授 (60583698)
• Co-Investigator(Kenkyū-buntansha): 嘉数 誠 佐賀大学, 工学(系)研究科(研究院), 教授 (50393731)
• Research Collaborator: LIANG Jianbo
• Project Period (FY): 2016-04-01 – 2018-03-31
• Project Status: Completed (Fiscal Year 2017)
• Budget Amount: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000); Fiscal Year 2017: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000); Fiscal Year 2016: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
• Keywords: 単結晶ダイヤモンド / 直接接合 / シリコン / 界面 / アモルファス層 / ダイヤモンド単結晶 / 表面活性化接合 / 接合界面 / 応力分布 / ラマン分光顕微鏡 / 常温接合 / EELS / XPS / ダイヤモンド / 固相・固相界面 / パワーデバイス

Outline of Final Research Achievements

We demonstrated that the diamond/Si interfaces fabricated by direct bonding show thermal tolerance against 1000 deg. Celcius. The obtained results are the first step for clarifying mechanisms for fabricating solid/solid interfaces at intermediate layer between diamond and Si. The results also imply that diamond layer can be epitaxially grown and device can be fabricated on diamond bonded on Si substrate. We also succeeded in direct bonding of polycrystalline diamond and Al, which means that junctions made of semiconductor/diamond/metal can be made.

Academic Significance and Societal Importance of the Research Achievements

1000℃という接合界面の極めて高い耐熱性は、シリコン基板上に接合されたダイヤモンド結晶上のダイヤモンド結晶成長、更にはダイヤモンド素子を作製可能であること、ダイヤモンドを熱拡散層とする「半導体素子／ダイヤモンド／金属ヒートシンク」というパワーエレクトロニクスモジュール実現の可能性を示しており、ダイヤモンドの応用開拓の観点から極めて高い価値を有する。

Research Products

• [Int'l Joint Research] ブリストル大学(英国)
• [Journal Article] Bonding of Dissimilar Semiconductor Materials for Energy-Harvesting and Energy-Saving Devices (2017)
  • Author(s): 重川直輝
  • Journal Title: Journal of the Vacuum Society of Japan Volume: 60 Issue: 11 Pages: 421-427
  • DOI: 10.3131/jvsj2.60.421
  • NAID: 130006252384
  • ISSN: 1882-2398, 1882-4749
  • Peer Reviewed / Open Access
• [Journal Article] Realization of direct bonding of single crystal diamond and Si substrates (2017)
  • Author(s): Jianbo Liang, Satoshi Masuya, Makoto Kasu, and Naoteru Shigekawa
  • Journal Title: APPLIED PHYSICS LETTERS Volume: 110 Issue: 11 Pages: 111603-111603
  • DOI: 10.1063/1.4978666
  • NAID: 120006453318
  • Peer Reviewed / Acknowledgement Compliant
• [Presentation] Room-temperature direct bonding of diamond to aluminum (2018)
  • Author(s): Jianbo Liang, Shoji Yamajo, Martin Kuball, and Naoteru Shigekawa
  • Organizer: 12th international New Diamond and Nano Carbons Conference
  • Int'l Joint Research
• [Presentation] Room temperature direct bonding of single crystal diamond and Si substrates for the combination of diamond devices with Si LSI (2017)
  • Author(s): Jianbo Liang, Satoshi Masuya, Makoto Kasu, Manikant Singh, Michael J. Uren, Martin Kuball, and Naoteru Shigekawa
  • Organizer: 12th Topical Workshop on Heterostructure Microelectronics
  • Int'l Joint Research
• [Presentation] Si基板と接合した単結晶ダイヤモンドの残留応力評価 (2017)
  • Author(s): Jianbo Liang, Satoshi Masuya, Yan Zhou, Filip Gucmann, Manikant Singh, James Poweroy, Martin Kuball, Makoto Kasu, and Naoteru Shigekawa
  • Organizer: 第７８回応用物理学会秋季学術講演会
• [Presentation] ダイヤモンド単結晶とSi単結晶基板の常温接合 (2016)
  • Author(s): 梁 剣波、桝谷 聡士、嘉数 誠、重川 直輝
  • Organizer: 2016年 第77回応用物理学会秋季学術講演会
  • Place of Presentation: 朱鷺メッセ（新潟県新潟市）
  • Year and Date: 2016-09-13
• [Book] 異種材料の接着・接合技術と マルチマテリアル化 (2017)
  • Author(s): 重川直輝（分担執筆）
  • Total Pages: 8
  • Publisher: 技術情報協会
  • ISBN: 9784861046827