| Budget Amount *help |
¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2017: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2016: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
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| Outline of Final Research Achievements |
We have developed high-pressure anisotropic plasma CVD method using H-assisted plasma CVD reactor. We have employed H2+Ar diluted toluene as ingredient gas. The total gas pressure was kept at 5 Torr which is much higher than the conventional pressure condition. Using the high pressure capacitively coupled plasmas, we realized to deposit hydrogenated amorphous carbon films with high film density of 1.8 g/cc at high deposition rate of 81 nm/min. In addition, we also achieved anisotropic deposition at high deposition rate of 3 times faster than the conventional deposition rate. These results shows above mentioned plasma extend the process parameter windows in plasma CVD processes.
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