Vapor phase synthesis of high pressure phase platinum group oxide
| Project/Area Number |
16K13958
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Inorganic chemistry
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| Research Institution | Tohoku University |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
OKA Daichi 東北大学, 大学院理学研究科, 助教 (20756514)
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| Research Collaborator |
FATIMA Zainab
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| Project Period (FY) |
2016-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2017: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2016: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
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| Keywords | エピタキシャル薄膜 / 二酸化ルテニウム / 格子歪 / ルチル構造 / 金属絶縁体転移 / 強相関電子系 / エピタキシャル / 磁性 |
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| Outline of Final Research Achievements |
Pulsed laser deposition method enabled to synthesize high pressure phase HP-PdF2 type RuO2 polycrystal film, while it was difficult to obtain its epitaxial thin film. On the other hand, the most stable rutile type RuO2 epitaxial thin films were synthesized on yttria stabilized zirconia and sapphire single crystal substrates. By introducing buffer layer for the thin film growth, extraordinarily high-strained thin films were obtained, and their resistivity was significantly changed. Accordingly, it will be possible to control physical properties of RuO2 and platinum group thin films by using the large lattice strain.
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Report
(3 results)
Research Products
(3 results)
