Preparation of composite comprising single crystals from eutectic melt for SiC epitaxial substrates
| Project/Area Number |
16K14089
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Inorganic industrial materials
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| Research Institution | Tohoku University |
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Principal Investigator |
Katsui Hirokazu 東北大学, 金属材料研究所, 特任准教授 (70610202)
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| Research Collaborator |
GOTO Takashi 東北大学, 金属材料研究所, 教授 (60125549)
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| Project Period (FY) |
2016-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2017: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2016: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Keywords | 共晶 / 炭化ケイ素 / ホウ化物 / 高温 / 溶融凝固 / 一方向凝固 / 非酸化物 / 自己組織化 / 導電性 / 導電性基板 / エピタキシャル / 導電性エピタキシャル基板 / 単結晶 |
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| Outline of Final Research Achievements |
This study aimed to explore substrates, having high-temperature stability and electrical conductivity, for SiC epitaxial growth by developing melt solidification of eutectics comprising SiC and transition metal diborides. We melted and solidified composites of SiC-CrB2 and SiC-VB2 by an arc-melting method and investigated effects of nominal compositions on the resultant microstructure and crystal orientation relationships in the eutectic composites. In SiC-CrB2, the eutectic composition was 22.5 mol% of SiC, in which the minute eutectic structure consisting of fine SiC grains several hundreds of nanometers dispersed in CrB2 matrix formed. The SiC-VB2 eutectic composite at the eutectic composition of 45 mol% SiC exhibited single-crystalline-like unidirectionally solidified microstructure with the crystal orientation relationship of SiC(111)//VB2(1-210) and SiC[0-11]//VB2[0001].
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Report
(3 results)
Research Products
(15 results)
