| Project/Area Number |
16K14221
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Hokkaido University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
冨岡 克広 北海道大学, 情報科学研究科, 准教授 (60519411)
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| Project Period (FY) |
2016-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2017: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2016: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
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| Keywords | 半導体ナノワイヤ / 光検出器 / フォトダイオード / 有機金属気相成長 / 選択成長 / シリコンフォトニクス / 有機金属気相選択成長 / 流量変調エピタキシー法 / アバランシェフォトダイオード |
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| Outline of Final Research Achievements |
We have developed novel phohtodetectors utilizing InGaAs nanowires (NWs) grown on Si substrates. InGaAs NWs with axial pn-junction was grown on p-type Si substrates partially covered with SiO2 mask by using selective-area metalorganic vapror phase epitaxy (SA-MOVPE). The controllability of the vertical InGaAs NWs, particularly of their In composition, was verified by detail investigation using SEM, XRD, and low-temperature photoluminescence (PL) measurements. Two-terminal devices fabricated using pin InGaAs NWs showed clear photoresponse at room temperature under photo irradiation of 635nm, and the sensitivity measured 0.13 A/W. The photoresponse at around 1.55 micron was also confirmed. Furthermore, the sensitivity of the device was improved by introducing higly-doped contact layers at the top and bottom of the NWs. Core-shell heterostructure was also introduced and photoresponse at 1.55 micron was improved by factor 20 due to the passivation effect of InP shell layers.
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