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A Novel Photodetector Utilizing Semiconductor Nanowires

Research Project

Project/Area Number 16K14221
Research Category

Grant-in-Aid for Challenging Exploratory Research

Allocation TypeMulti-year Fund
Research Field Electronic materials/Electric materials
Research InstitutionHokkaido University

Principal Investigator

Junichi Motohisa  北海道大学, 情報科学研究科, 教授 (60212263)

Co-Investigator(Kenkyū-buntansha) 冨岡 克広  北海道大学, 情報科学研究科, 准教授 (60519411)
Project Period (FY) 2016-04-01 – 2018-03-31
Project Status Completed (Fiscal Year 2017)
Budget Amount *help
¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2017: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2016: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Keywords半導体ナノワイヤ / 光検出器 / フォトダイオード / 有機金属気相成長 / 選択成長 / シリコンフォトニクス / 有機金属気相選択成長 / 流量変調エピタキシー法 / アバランシェフォトダイオード
Outline of Final Research Achievements

We have developed novel phohtodetectors utilizing InGaAs nanowires (NWs) grown on Si substrates. InGaAs NWs with axial pn-junction was grown on p-type Si substrates partially covered with SiO2 mask by using selective-area metalorganic vapror phase epitaxy (SA-MOVPE). The controllability of the vertical InGaAs NWs, particularly of their In composition, was verified by detail investigation using SEM, XRD, and low-temperature photoluminescence (PL) measurements. Two-terminal devices fabricated using pin InGaAs NWs showed clear photoresponse at room temperature under photo irradiation of 635nm, and the sensitivity measured 0.13 A/W. The photoresponse at around 1.55 micron was also confirmed. Furthermore, the sensitivity of the device was improved by introducing higly-doped contact layers at the top and bottom of the NWs. Core-shell heterostructure was also introduced and photoresponse at 1.55 micron was improved by factor 20 due to the passivation effect of InP shell layers.

Report

(3 results)
  • 2017 Annual Research Report   Final Research Report ( PDF )
  • 2016 Research-status Report
  • Research Products

    (10 results)

All 2017 2016

All Journal Article (1 results) (of which Peer Reviewed: 1 results,  Open Access: 1 results) Presentation (9 results) (of which Int'l Joint Research: 5 results)

  • [Journal Article] Composition controllability of InGaAs nanowire arrays in selective area growth with controlled pitched on Si platform2017

    • Author(s)
      Kohei Chiba, Katsuhiro Tomioka, Akinobu Yoshida, and Junichi Motohisa
    • Journal Title

      AIP Advances

      Volume: 7 Issue: 12 Pages: 125304-125304

    • DOI

      10.1063/1.4993689

    • NAID

      120006380383

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed / Open Access
  • [Presentation] Integration of InGaAs nanowires on Si(111) for optical devices2017

    • Author(s)
      K. Chiba, K. Tomioka, A. Yoshida, J. Motohisa
    • Organizer
      The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Demonstration of InGaAs nanowire array photodiode on Si2017

    • Author(s)
      K. Chiba, A.Yoshida, K. Tomioka, J. Motohisa
    • Organizer
      30th International Microprocesses and Nanotechnology Conference (MNC 2017)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Vertical InGaAs nanowire photodiode array on Si2017

    • Author(s)
      K. Chiba, A. Yoshida, K. Tomioka, J. Motohisa
    • Organizer
      MRS fall meeting 2017
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Si基板上InGaAsナノワイヤアレイフォトダイオード2017

    • Author(s)
      千葉 康平、吉田 旭伸、冨岡 克広、本久 順一:
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] Si基板上InGaAsナノワイヤアレイフォトダイオードに関する研究2017

    • Author(s)
      [8].千葉 康平、吉田 旭伸、冨岡 克広、本久 順一
    • Organizer
      The 36th Electronic Materials Symposium (EMS 36)
    • Related Report
      2017 Annual Research Report
  • [Presentation] Heterogeneous Integration of InGaAs Nanowires on Si(111) for Si Photonics2016

    • Author(s)
      K. Chiba, K. Tomioka, F. Ishizaka, A. Yoshida, J. Motohisa
    • Organizer
      PRiME 2016, 230th Meeting of The Electrochemical Society (ECS 230)
    • Place of Presentation
      Honolulu
    • Year and Date
      2016-10-02
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research
  • [Presentation] Si基板上InGaAsナノワイヤの組成制御2016

    • Author(s)
      千葉 康平、冨岡 克広、石坂 文哉、吉田 旭伸、本久 順一
    • Organizer
      第77回 応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ(新潟県新潟市)
    • Year and Date
      2016-09-13
    • Related Report
      2016 Research-status Report
  • [Presentation] Study on Selective-Area Growth of InGaAs Nanowires for Optical Communication Band2016

    • Author(s)
      K. Chiba, K. Tomioka, J. Motohisa, F. Ishizaka, A. Yoshida, T. Fukui
    • Organizer
      The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
    • Place of Presentation
      Nagoya
    • Year and Date
      2016-08-07
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research
  • [Presentation] Selective-area MOVPE growth of InGaAs nanowires for optical communication band2016

    • Author(s)
      Kohei Chiba, Katsuhiro Tomioka, Fumiya Ishizaka, Akinobu Yoshida, Junichi Motohisa
    • Organizer
      The 35th Electronic Materials Symposium (EMS 35)
    • Place of Presentation
      Moriyama
    • Year and Date
      2016-07-06
    • Related Report
      2016 Research-status Report

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Published: 2016-04-21   Modified: 2019-03-29  

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