| Project/Area Number |
16K14222
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tohoku University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
小島 一信 東北大学, 多元物質科学研究所, 准教授 (30534250)
原 和彦 静岡大学, 電子工学研究所, 教授 (80202266)
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| Project Period (FY) |
2016-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2017: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2016: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Keywords | 半導体物性 / 励起子 / 光電子銃 / 窒化ボロン / フェムト秒電子銃 / BN / フェムト秒レーザ / フェムト秒集束電子線 |
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| Outline of Final Research Achievements |
To cope with the water shortage problem and to downsize a variety of photo-excitation sources, there has been a strong demand to realize low-cost solid-state deep-ultraviolet (DUV) light emitters. Since hexagonal boron nitride (h-BN) exhibits DUV lights at approximately 215-240 nm and is predicted to show strong excitonic effects in its optical spectra, h-BN is one of the promising semiconductors of DUV and UV light emitters. In this research project, radiative and nonradiative recombination dynamics of excitons of h-BN microcrystals (MCs) and epilayers in the DUV wavelength region were investigated by using our unique spatio-time-resolved cathodoluminescence (STRCL) equipment. The h-BN samples exhibited distinct DUV luminescence peaks although the spectral features indicated an indirect bandgap nature of h-BN. The result indicates a strong interaction between the indirect excitons and phonons due to the excitonic effect.
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