Spin-functional materials and devices using narrow-gap ferromagnetic semiconductors
| Project/Area Number |
16K14224
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | The University of Tokyo |
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Principal Investigator |
Tanaka Masaaki 東京大学, 大学院工学系研究科(工学部), 教授 (30192636)
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| Research Collaborator |
Le Duc Anh 東京大学, 大学院工学系研究科, 助教
Nguyen Thanh Tu ホーチミン師範大学, 講師
Pham Nam Hai 東京工業大学, 工学院, 准教授
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| Project Period (FY) |
2016-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2017: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2016: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Keywords | スピン / 強磁性半導体 / 狭ギャップ / (In,Fe)As / (Ga,Fe)Sb / (In,Fe)Sb / キュリー温度 / スピントロニクス / 狭ギャップ半導体 / 電界効果トランジスタ / キャリア誘起強磁性 / 電界による磁性制御 / 狭バンドギャップ強磁性半導体 / スピンバンドエンジニアリング / スピンエサキダイオード / トンネル分光 / ヘテロ接合 / スピンエレクトロニクス / スピン機能デバイス |
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| Outline of Final Research Achievements |
We have successfully grown a new class of narrow-gap III-V based ferromagnetic semiconductors with zinc-blende crystal structures and their heterostructures. We have revealed their properties and functionalities, which can be applied to spintronics devices. Ferromagnetic semiconductors (FMS) are alloy semiconductors doped with magnetic atoms and have both the properties of semiconductors and ferromagnets, thus expected to be functional materials for next-generation electronics. We have created p-type (Ga,Fe)Sb and n-type (In,Fe)Sb whose Curie temperatures are higher than room temperature, and their quantum heterostructures. These new materials and heterostructures are shown to have unique and useful properties, which can be applied to future spintronics devices.
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Report
(3 results)
Research Products
(70 results)
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[Presentation] 放射光分光による鉄系強磁性半導体の強磁性発現機構解明2018
Author(s)
小林正起, L. D. Anh, P. N. Hai, 木内久雄, 丹羽秀治, 宮脇淳, 原田慈久, T. Schmitt, 藤森淳, V. N. Strocov, 尾嶋正治, 田中雅明
Organizer
ISSP-Workshop: SPring-8 BL07LSUの現状と次世代軟X線科学創成への戦略
Related Report
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[Presentation] Effect of Be Doping on the Electronic Structure of n-Type Ferromagnetic Semiconductor (In,Fe)As2018
Author(s)
Masaki Kobayashi, Hisao Kiuchi, Hideharu Niwa, Jun Miyawaki, Atsushi Fujimori, Le Duc Anh, Pham Nam Hai, Masaaki Tanaka, Masaharu Oshima, Yoshihisa Harada
Organizer
65th Spring Meeting of the Japan Society of Applied Physics
Related Report
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[Presentation] Magnetization process of the insulating ferromagnetic semiconductor (Al,Fe)Sb2018
Author(s)
Shoya Sakamoto, Le Duc Anh, Pham Nam Hai, Yukiharu Takeda, Masaki Kobayashi, Ryosho Nakane, Yuki K. Wakabayashi, Yosuke Nonaka, Keisuke Ikeda1, Zhendong Chi, Yuxuan Wan, Masahiro Suzuki, Yuji Saitoh, Hiroshi Yamagami, Masaaki Tanaka, Atsushi Fujimori
Organizer
65th Spring Meeting of the Japan Society of Applied Physics
Related Report
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[Presentation] n型強磁性半導体(In,Fe)Asの電子構造に対するBe添加効果2017
Author(s)
小林 正起, 木内 久雄, 丹羽 秀治, 宮脇 淳, 藤森 淳, Le Duc Anh, Pham Nam Hai, 田中 雅明, 尾嶋正治, 原田慈久
Organizer
2017年日本物理学会秋季大会
Related Report
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[Presentation] Josephson effect in Nb/(In,Fe)As/Nb junctions2016
Author(s)
T. Nakamura, Y. Iwasaki, L. D. Anh, Y. Hashimoto, S. Ohya, M. Tanaka, and S. Katsumoto
Organizer
9th International Conference on Physics and Applications of Spin-Related Phenomena in Solids
Place of Presentation
Kobe, Japan
Year and Date
2016-08-08
Related Report
Int'l Joint Research
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