| Project/Area Number |
16K14233
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Osaka University |
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Principal Investigator |
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| Project Period (FY) |
2016-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2017: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2016: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Keywords | 希土類添加半導体 / 太陽電池 / 波長変換 |
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| Outline of Final Research Achievements |
For wavelength conversion for Si solar cells, we have investigated the epitaxial growth and the optical properties of Tm,Yb-codoped ZnO thin films by sputtering-assisted metalorganic chemical vapor deposition. The characteristic light emission due to the intra-4f shell transitions of Tm3+ and Yb+ ions in the ZnO host is observed at 4K by using photoluminescence (PL) characterization. The time-resolved PL measurements on the Tm and Yb emission reveals that the carrier decay time of each ion can vary by changing the concentration of both Tm and Yb ions, which depends on a mixing ratio of Tm2O3 and Yb2O3 in a sputtering target. The energy transfer from Tm to Yb ions occurs in the sample with the high mixing ratio, and the reversed energy transfer process occurs with the lower mixing ratio. These results indicate that the concentration, and thus the carrier dynamics of Tm and Yb ions in the host, can be controlled by altering the mixing ratio of the sputter target and the frequency power.
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