Development for High-Performance Tunnel Transistors with Direct-Transition-Type GeSn
| Project/Area Number |
16K14234
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kyushu University |
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Principal Investigator |
SADOH Taizoh 九州大学, システム情報科学研究院, 准教授 (20274491)
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| Project Period (FY) |
2016-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Fiscal Year 2017: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2016: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
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| Keywords | トランジスタ / 結晶成長 |
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| Outline of Final Research Achievements |
Improvement of operation speed and functionality of large-scale integrated circuits has been achieved by scaling of silicon transistors. However, leakage current of transistors under off-state is increased by scaling, which makes difficult to further improve the performance of the large-scale integrated circuits. To suppress the leakage current of transistors under off-state, a novel device structure, which turn on/off the drain current by the quantum mechanics tunneling effect, should be developed. In the present study, techniques for growth of direct-transition-type GeSn crystals on insulator and doping have been developed to realize the tunnel transistors.
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Report
(3 results)
Research Products
(9 results)
