• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Development for High-Performance Tunnel Transistors with Direct-Transition-Type GeSn

Research Project

Project/Area Number 16K14234
Research Category

Grant-in-Aid for Challenging Exploratory Research

Allocation TypeMulti-year Fund
Research Field Electronic materials/Electric materials
Research InstitutionKyushu University

Principal Investigator

SADOH Taizoh  九州大学, システム情報科学研究院, 准教授 (20274491)

Project Period (FY) 2016-04-01 – 2018-03-31
Project Status Completed (Fiscal Year 2017)
Budget Amount *help
¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Fiscal Year 2017: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2016: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Keywordsトランジスタ / 結晶成長
Outline of Final Research Achievements

Improvement of operation speed and functionality of large-scale integrated circuits has been achieved by scaling of silicon transistors. However, leakage current of transistors under off-state is increased by scaling, which makes difficult to further improve the performance of the large-scale integrated circuits. To suppress the leakage current of transistors under off-state, a novel device structure, which turn on/off the drain current by the quantum mechanics tunneling effect, should be developed. In the present study, techniques for growth of direct-transition-type GeSn crystals on insulator and doping have been developed to realize the tunnel transistors.

Report

(3 results)
  • 2017 Annual Research Report   Final Research Report ( PDF )
  • 2016 Research-status Report
  • Research Products

    (9 results)

All 2017 2016

All Journal Article (3 results) (of which Peer Reviewed: 3 results) Presentation (6 results) (of which Int'l Joint Research: 6 results)

  • [Journal Article] Novel growth techniques of group-IV based semiconductors on insulator for next-generation electronics2017

    • Author(s)
      Masanobu Miyao and Taizoh Sadoh
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 56 Issue: 5S1 Pages: 05DA06-05DA06

    • DOI

      10.7567/jjap.56.05da06

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Large single-crystal Ge-on-insulator by thermally-assisted (~400 °C) Si-seeded-pulse-laser annealing2017

    • Author(s)
      Sadoh T.、Kurosawa M.、Heya A.、Matsuo N.、Miyao M.
    • Journal Title

      Materials Science in Semiconductor Processing

      Volume: 70 Pages: 8-11

    • DOI

      10.1016/j.mssp.2016.10.033

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Low-Temperature Formation of Sn-Doped Ge on Insulating Substrates by Metal-Induced Crystallization2016

    • Author(s)
      T. Sakai, R. Matsumura, T. Sadoh, and M. Miyao
    • Journal Title

      ECS Transactions

      Volume: 75 Issue: 10 Pages: 105-108

    • DOI

      10.1149/07510.0105ecst

    • Related Report
      2016 Research-status Report
    • Peer Reviewed
  • [Presentation] Formation of n-Type Ge on Insulator by Low-Temperature Sb-Induced Layer Exchange Crystallization2017

    • Author(s)
      H. Gao, R. Aoki, M. Sasaki, M. Miyao, and T. Sadoh
    • Organizer
      International Workshop on Junction Technology
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Low-Temperature Formation of n-Type Ge/Insulator by Sb-Induced Layer Exchange Crystallization2017

    • Author(s)
      H. Gao, R. Aoki, M. Sasaki, M. Miyao, and T. Sadoh
    • Organizer
      International Workshop on Active-Matrix Flatpanel Displays and Devices
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Low-Temperature Sb-Induced Layer Exchange Crystallization for Slef-Limiting Formation of n-Type Ge/Insulator2017

    • Author(s)
      H. Gao, R. Aoki, M. Miyao, and T. Sadoh
    • Organizer
      International Conference on Solid-State Devices and Materials
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Low-Temperature Formation of n-Type Ge on Insulator by Sb-Induced Layer Exchange Crystallization2017

    • Author(s)
      Hongmiao Gao, Masanobu Miyao, and Taizoh Sadoh
    • Organizer
      International WorkShop on New Group IV Semiconductor Nanoelectronics
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 21.Cooling Rate Dependent High Substitutional Sn Concentration (>10%) in GeSn Crystals on Insulator by Pulsed Laser-Annealing2016

    • Author(s)
      K. Moto, R. Matsumura, T. Sadoh, H. Ikenoue, and M. Miyao
    • Organizer
      Pacific Rim Meeting on Electrochemical and Solid-State Science, PRiME 2016& 230th ECS Meeting
    • Place of Presentation
      Honolulu
    • Year and Date
      2016-10-02
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research
  • [Presentation] 18.Thermally-Stable High Sn Concentration (~9%) GeSn on Insulator by Ultra-Low Temperature (~180°C) Solid-Phase Crystallization Triggered by Laser-Anneal Seeding2016

    • Author(s)
      R. Matsumura, K. Moto, Y. Kai, T. Sadoh, H. Ikenoue, and M. Miyao
    • Organizer
      International Conference on Solid State Devices and Materials 2016
    • Place of Presentation
      Tsukuba
    • Year and Date
      2016-09-26
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research

URL: 

Published: 2016-04-21   Modified: 2019-03-29  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi