| Project/Area Number |
16K14236
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Nihon University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
永田 知子 日本大学, 理工学部, 助教 (00733065)
岩田 展幸 日本大学, 理工学部, 准教授 (20328686)
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| Project Period (FY) |
2016-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2017: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2016: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | 単層カーボンナノチューブ / 自由電子レーザ / カイラリティ / 化学気相成長法 / 金属/半導体接合 / 自由電子レーザー / アルコール触媒気相成長 / 面内配向 / その場成長制御 / カイラル制御 / ナノ電子デバイス |
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| Outline of Final Research Achievements |
The purpose of this work is to establish a method for chirality and diameter control of semiconducting single walled carbon nanotubes (SWNTs) by irradiation and resonant absorption of ultra-short pulse laser, free electron laser (FEL) during CVD growth. As a result, a novel technique has been developed in order to prepare selectively semiconducting SWNTs with the uniform energy gap which is corresponding to the energy of irradiated FEL. Furthermore, we have tried to create nanoscale metal/semiconductor junctions (MSJ) as our wishes in a SWNT with its chirality changes by operating a FEL irradiation switch, and partially succeeded in preparation of MSJ in SWNTs.
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