Development of single dopant circuit by deterministic doping and application to stochastic processing
| Project/Area Number |
16K14242
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Tohoku University |
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Principal Investigator |
Shinada Takahiro 東北大学, 国際集積エレクトロニクス研究開発センター, 教授 (30329099)
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| Co-Investigator(Kenkyū-buntansha) |
大矢 剛嗣 横浜国立大学, 大学院工学研究院, 准教授 (30432066)
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| Research Collaborator |
Asai Tetsuya
Tanii Takashi
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| Project Period (FY) |
2016-04-01 – 2019-03-31
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| Project Status |
Completed (Fiscal Year 2018)
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| Budget Amount *help |
¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2018: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2017: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2016: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
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| Keywords | 決定論的ドーピング / 単ドーパント回路 / 確率的情報処理システム |
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| Outline of Final Research Achievements |
In this research, we aimed to incerase the ion species in the deterministic doping method, develop a circuit in which a single dopant dominates the operation, and model processing in the brain with quantum effects. Then, by realizing brain-type quantum circuits that perform ultra-low-power, parallel computations, we aimed to establish a foundation for innovative information processing systems. Specifically, we established the single dopant quantum dot formation process by the deterministic doping method, and succeeded in forming a new quantum system consisting of germanium-vacancy complex, which is an achievement that enables room temperature operation. In addition, we have developed a single-dopant neural network circuit that operates using thermal noise and fluctuation for the first time, and built the basic technologies for exploring a new information processing device and circuit.
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| Academic Significance and Societal Importance of the Research Achievements |
本研究の成果は、ドーパントに頼らないデバイス開発が主流の中で、従来のドーパント依存トランジスタの極限形として単ドーパントが制御されたデバイスに再び光を当てた点と、制御された単ドーパントが作る量子準位の創造に学術的意義がある。今回、単一ドーパントに基づく新たな情報処理デバイス・回路が創出されたことで、小規模であっても自然・生物に学ぶ全く新しい情報処理システムの可能性が拓け、膨大な情報の中から、自ずと特徴を捉える学習型のコンピューティングの原理実証に一歩近づく成果である。加えて、情報処理システム基盤として、圧倒的に高い信頼性を有するCMOS テクノロジーの裾野を拡大させる社会的意義があると考える。
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Report
(4 results)
Research Products
(36 results)
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[Presentation] Atom Probe Study of Erbium and Oxygen Co‐Implanted Silicon2017
Author(s)
Y. Shimizu, Y. Tu , A. Abdelghafar, M.Yano, Y. Suzuki, T. Tanii, T. Shinada, E. Prati, M. Celebrano, M. Finazzi, L. Ghirardini, K. Inoue , and Y. Nagai
Organizer
Silicon Nanoelectronics Workshop 2017
Related Report
Int'l Joint Research
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[Presentation] Revisiting room‐temperature 1.54um photoluminescence of ErOx centers in silicon at extremely low concentration2017
Author(s)
E. Prati, M. Celebrano, L. Ghirardini, P. Biagioni, M. Finazzi, Y. Shimizu, Y. Tu, K. Inoue, Y. Nagai, T. Shinada, Y. Chiba, A. Abdelghafar, M. Yano, T. Tanii
Organizer
Silicon Nanoelectronics Workshop 2017
Related Report
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