| Project/Area Number |
16K14252
|
|---|
| Research Category |
Grant-in-Aid for Challenging Exploratory Research
|
| Allocation Type | Multi-year Fund |
|---|
| Research Field |
Electron device/Electronic equipment
|
|---|
| Research Institution | University of Toyama |
|---|
Principal Investigator |
Koichi Maezawa 富山大学, 大学院理工学研究部(工学), 教授 (90301217)
|
|---|
| Research Collaborator |
MORI Masayuki
TOYA KOSHI
|
|---|
| Project Period (FY) |
2016-04-01 – 2019-03-31
|
| Project Status |
Completed (Fiscal Year 2018)
|
| Budget Amount *help |
¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2018: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2017: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2016: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
|
|---|
| Keywords | 共鳴トンネル素子 / 酸化物半導体 / 有効質量 / 逐次トンネル / マイクロ波集積回路 / 溶液プロセス / 共鳴トンネル / 非晶質 / マイクロ波 / ミリ波 |
|---|
| Outline of Final Research Achievements |
We investigated the possibility of the resonant tunneling diodes (RTDs) based on solution-processed oxide semiconductors. We first discussed the possibility of high frequency operation of such RTDs, and showed that the RTDs operating with sequential tunneling mechanism might operate at high frequencies in spite of the high scattering rate and low mobility. We fabricated the In203/Ga203/In203 and In203/HMDS/In203 nin diodes using spin-coat method to investigate the materials appropriate for the barrier layers of the RTDs. The current-voltage characteristics showed current-blocking at low voltages, which imply that both Ga203 and HMDS layers can work as a tunneling barrier.
|
| Academic Significance and Societal Importance of the Research Achievements |
本研究の目的は、移動度の小さい非晶質酸化物半導体を用いて高性能な共鳴トンネル素子(RTD)を作製し、マイクロ波/ミリ波エレクトロニクスの基礎を作ることにある。非晶質酸化物半導体は、散乱頻度が高いため、移動度が小さく、高周波トランジスタを作るのは難しい。しかし、有効質量は比較的小さく、量子効果の発現は可能である。特にRTDは、散乱頻度が高くても、逐次トンネルの効果により十分に高性能な素子が作製可能と考えられる。これを用いて無線通信が可能な高周波回路が形成できれば、IoT への応用など、その効果は大きい。
|
