Low temperature oxidation of SiC using catalytic effects of functional oxides
| Project/Area Number |
16K14258
|
|---|
| Research Category |
Grant-in-Aid for Challenging Exploratory Research
|
| Allocation Type | Multi-year Fund |
|---|
| Research Field |
Electron device/Electronic equipment
|
|---|
| Research Institution | Kyushu University |
|---|
Principal Investigator |
Asano Tanemasa 九州大学, システム情報科学研究院, 教授 (50126306)
|
|---|
| Co-Investigator(Renkei-kenkyūsha) |
IKEDA Akihiro 九州大学, 大学院システム情報科学研究院, 助教 (60315124)
LI Xiaohong 北九州市立大学, 国際環境工学部, 教授 (30326459)
|
|---|
| Research Collaborator |
TAKAO Takayuki 九州大学, 大学院システム情報科学研究院, 技術職員
LI li 九州大学, 大学院システム情報科学府
|
|---|
| Project Period (FY) |
2016-04-01 – 2018-03-31
|
| Project Status |
Completed (Fiscal Year 2017)
|
| Budget Amount *help |
¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2017: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2016: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
|
|---|
| Keywords | silicon carbide / 4H SiC / oxidation / catalytic oxidation / functional oxide / atomic oxygen / perovskite oxide / 炭化シリコン / SiC / 熱酸化 / 触媒酸化 / ゲート酸化 / 酸化物触媒 / ペロブスカイト酸化物 |
|---|
| Outline of Final Research Achievements |
Implementation of electrical switching device which fully utilize material properties of silicon carbide (SiC) will significantly promote the development of compact, light-weight, and low-energy loss power controller for, for example, electric vehicles. To fabricate a high-performance SiC switch, development of low-temperature fabrication process is highly demanded. In this work, effect on oxidation of SiC surface of the use of functional oxide to produce radical oxygen was experimentally investigated. It has been found that the use of functional oxide can enhance the oxidation rate about 100 times at 800 degree-C. Besides, fundamental data for designing practical equipment were acquired.
|
Report
(3 results)
Research Products
(12 results)
