| Budget Amount *help |
¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2017: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2016: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Outline of Final Research Achievements |
I succesfully fabricated planer-type side gate transistors using VO2 nanowire channels and succeed in control of proton density in the VO2 channels through gating voltage. In detail, It is found that proton diffusion was quite higher than that of conventional thermal activation type-hopping, which is 1000 hold higher. This discovary is probably due to csystal transformation from VO2 to HVO2 having high density proton, whcih is new discavary. This result is better than expected one and it will be expected to establish new energy applications in the future.
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