Spin injection to nanodiamond films
Project/Area Number |
16K14391
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Research Category |
Grant-in-Aid for Challenging Exploratory Research
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Allocation Type | Multi-year Fund |
Research Field |
Inorganic materials/Physical properties
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Research Institution | Kyushu University |
Principal Investigator |
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Project Period (FY) |
2016-04-01 – 2019-03-31
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Project Status |
Completed (Fiscal Year 2018)
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Budget Amount *help |
¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2018: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2017: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2016: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
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Keywords | ナノダイヤモンド / スピンバルブ / スピン注入 / 局所配置 / 非局所配置 / スパッタリング / 同軸型アークプラズマ堆積法 / 電子線リソグラフィー / 鉄シリサイド / ダイヤモンド / 磁気抵抗効果 / リソグラフィー / スピン拡散長 / カーボン / カーボン材料 / ナノ材料 |
Outline of Final Research Achievements |
The spin diffusion length in nano diamond was investigated iun this work. After an Fe3Si layer is epitaxially grown on a Si (111) substrate by sputtering, an ultrananocrystalline diamond (UNCD) film is deposited by coaxial arc plasma deposition, and an Fe layer is deposited by sputtering on the top layer. For the resultant Fe/60 nm UNCD/Fe3Si structure, spin valve signals corresponding to parallel and antiparallel alignments between the ferromagnetic layers were observed at room temperature. We also realized the fabrication of a lateral-type spin valve device by lift-off method using electron beam lithography, and succeeded in observing spin valve signals in local arrangement.
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Academic Significance and Societal Importance of the Research Achievements |
原子番号が小さいほどスピン軌道相互作用は小さく,軽元素ほど長いスピン拡散長が期待され,カーボンから成るグラフェンやカーボンナノチューブが1 μm以上のスピン拡散長を期待されて活発に研究されているが,ダイヤモンド系材料に関する研究はまだ殆ど無かった.そこで,ナノダイヤモンド(NCD)半導体を中間層としたスピンバルブ素子を作製して,ナノダイヤモンド内のスピン拡散長を明らかにすることを目的として研究を行った.マスク法により縦型構造の,電子線リソグラフィーを用いて横型構造のスピンバルブ素子の作製を実現して,スピンバルブ信号の観測に成功した.ダイヤモンドのスピントロニクスへの展開の第一歩といえる.
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Report
(4 results)
Research Products
(33 results)
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[Presentation] Magnetoresistance effects in spin-valves comprising N-doped carbon interlayers2017
Author(s)
Kazuki Kudo, Satoshi Takeichi, Kazutoshi Nakashima, Ken-ichiro Sakai, Tsuyoshi Yoshitake
Organizer
11th International Symposium on Atomic Level Characterizations for New Materials and Devices ’17 (ALC17), December 3-8), 2017, Aqua Kauai Beach Resort, Kauai, Hawaii, USA
Related Report
Int'l Joint Research
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[Presentation] Structural evaluations of Fe/boron-doped carbon/Fe3Si spin-valve junctions2017
Author(s)
Kazuki Kudo, Satoshi Takeichi, Kazutoshi Nakashima, Ken-ichiro Sakai, Masahiko, Nishijima, Tsuyoshi Yoshitake
Organizer
11th International Symposium on Atomic Level Characterizations for New Materials and Devices ’17 (ALC17), December 3-8), 2017, Aqua Kauai Beach Resort, Kauai, Hawaii, USA
Related Report
Int'l Joint Research
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[Presentation] Magnetoresistance effects in Fe/B-doped carbon/Fe3Si trilayered spin valve junctions2017
Author(s)
Kazuki Kudo, Kazutoshi Nakashima, Satoshi Takeichi, Ken-ichiro Sakai, Masahiko Nishijima, and Tsuyoshi Yoshitake
Organizer
9th International School and Conference on Spintronics and Quantum Information Technology(Spin TECH IX), Jun. 4-8, 2017, Fukuoka International Congress Center, Fukuoka, Japan
Related Report
Int'l Joint Research
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[Presentation] Spin valves comprising nitrogen-doped carbon interlayers2016
Author(s)
Kazutoshi Nakashima, Kazuki Kudo, Satoshi Takeichi, Ken-ichiro Sakai, and Tsuyoshi Yoshitake
Organizer
The 18th Cross Straits Symposium on Energy and Environmental Science & Technology, Dec 4-6, 2016, Shanghai Jiao Tong University, China
Place of Presentation
Shanghai Jiao Tong University, China
Year and Date
2016-12-04
Related Report
Int'l Joint Research
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[Presentation] Fe/boron-doped Ultrananocrystalline Diamond/Fe Trilayered Spin Valve Junctions2016
Author(s)
Kazuki Kudo*, Satoshi Takeichi, Hirokazu Kishimoto, Ken-ichiro Sakai, Hiroyuki Deguchi, and Tsuyoshi Yoshitake
Organizer
Asia-Pacific Conference on Semiconducting Silicides and Related Materials Science and Technology Towards Sustainable Electronics ( APAC Silicide 2016)
Place of Presentation
Nishijin Plaza, Kyushu University, Fukuoka
Year and Date
2016-07-16
Related Report
Int'l Joint Research
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[Presentation] Spin Valve Junctions Comprising Fe-Si Materials2016
Author(s)
Tsuyoshi Yoshitake*, Kazutoshi Nakashima, Kazuki Kudo, Kazuya Ishibashi, Yuki Asai,Ken-ichiro Sakai, and Hiroyuki Deguchi
Organizer
Asia-Pacific Conference on Semiconducting Silicides and Related Materials Science and Technology Towards Sustainable Electronics ( APAC Silicide 2016)
Place of Presentation
Nishijin Plaza, Kyushu University, Fukuoka
Year and Date
2016-07-16
Related Report
Int'l Joint Research
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