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Development of innovative fabrication technology for silicon solar cells using a novel low-temperature doping method

Research Project

Project/Area Number 16K14400
Research Category

Grant-in-Aid for Challenging Exploratory Research

Allocation TypeMulti-year Fund
Research Field Composite materials/Surface and interface engineering
Research InstitutionJapan Advanced Institute of Science and Technology

Principal Investigator

Ohdaira Keisuke  北陸先端科学技術大学院大学, 先端科学技術研究科, 教授 (40396510)

Project Period (FY) 2016-04-01 – 2019-03-31
Project Status Completed (Fiscal Year 2018)
Budget Amount *help
¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2017: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2016: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Keywordsシリコン / ドーピング / 太陽電池 / ヘテロ接合 / シリコンヘテロ接合太陽電池 / 触媒分解 / パッシベーション / 半導体物性
Outline of Final Research Achievements

In this study, we aimed to establish a technology to fabricate silicon heterojunction solar cells by using “Cat-doping” to form a doped amorphous silicon layer by post doping to an intrinsic amorphous silicon layer. We attempted to clarify doping conditions by which an amorphous silicon/crystalline silicon interface does not deteriorate and the operation of silicon heterojunction solar cells containing Cat-doped a-Si layers showing high open-circuit voltage. We have demonstrated that n-type and p-type amorphous silicon layers can be formed by Cat-doping without deteriorating interface qualities by tuning the substrate temperature during Cat-doping. We have also succeeded in the operation of silicon heterojunction solar cells with p-type amorphous silicon formed by Cat-doping.

Academic Significance and Societal Importance of the Research Achievements

結晶シリコン太陽電池における究極の構造の一つといえる、裏面電極型シリコンヘテロ接合太陽電池の量産化において、裏面の非晶質シリコンの安価なパターニングが課題となっている。本研究において、事後のドーピングで形成した非晶質シリコン膜が太陽電池に利用できることが見出されたことから、非晶質シリコン膜に対しCatドーピングをハードマスクを通して行うことにより、事後のパターニング法として展開できる可能性を示した。

Report

(4 results)
  • 2018 Annual Research Report   Final Research Report ( PDF )
  • 2017 Research-status Report
  • 2016 Research-status Report
  • Research Products

    (12 results)

All 2019 2018 2017 2016

All Journal Article (2 results) (of which Peer Reviewed: 1 results) Presentation (10 results) (of which Int'l Joint Research: 3 results)

  • [Journal Article] Silicon Heterojunction Solar Cell with a p-type Amorphous Silicon Emitter Formed by Catalytic Impurity Doping2018

    • Author(s)
      Katsuya Akiyama and Keisuke Ohdaira
    • Journal Title

      Proceedings of 7th World Conference on Photovoltaic Energy Conversion (WCPEC)

      Volume: 7 Pages: 2097-2099

    • DOI

      10.1109/pvsc.2018.8547875

    • Related Report
      2018 Annual Research Report
  • [Journal Article] Catalytic phosphorus and boron doping to amorphous silicon films2017

    • Author(s)
      K. Ohdaira, J. Seto, and H. Matsumura
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 56 Issue: 8S2 Pages: 08MB06-08MB06

    • DOI

      10.7567/jjap.56.08mb06

    • Related Report
      2017 Research-status Report
    • Peer Reviewed
  • [Presentation] BのCatドーピングによるn型a-Siの導電率の変化2019

    • Author(s)
      鶴飼 太陽、 大平 圭介
    • Organizer
      第66回応用物理学会春季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] Silicon Heterojunction Solar Cell with a p-type Amorphous Silicon Emitter Formed by Catalytic Impurity Doping2018

    • Author(s)
      Katsuya Akiyama and Keisuke Ohdaira
    • Organizer
      7th World Conference on Photovoltaic Energy Conversion (WCPEC)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] B Catドーピングを用いたSiヘテロ接合太陽電池の作製2018

    • Author(s)
      秋山 勝哉、大平 圭介
    • Organizer
      日本学術振興会第175委員会 第15回「次世代の太陽光発電システム」シンポジウム
    • Related Report
      2018 Annual Research Report
  • [Presentation] B Cat-doped a-Si:H層をもつSiヘテロ接合太陽電池2018

    • Author(s)
      秋山 勝哉、大平 圭介
    • Organizer
      第65回応用物理学会春季学術講演会
    • Related Report
      2017 Research-status Report
  • [Presentation] B Cat-doping法によるa-Si/ITO界面の電気特性の変化2017

    • Author(s)
      秋山 勝哉、大平 圭介
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜, 神奈川県, 横浜市.
    • Year and Date
      2017-03-14
    • Related Report
      2016 Research-status Report
  • [Presentation] B Cat-dopingによるa-Si膜およびa-Si/ITO界面の電気特性の変化2017

    • Author(s)
      秋山 勝哉、大平 圭介
    • Organizer
      第14回Cat-CVD研究会
    • Related Report
      2017 Research-status Report
  • [Presentation] B Cat-doping法によるa-Si/ITO界面の電気特性の変化2017

    • Author(s)
      秋山 勝哉、大平 圭介
    • Organizer
      日本学術振興会第175委員会 第14回「次世代の太陽光発電システム」シンポジウム
    • Related Report
      2017 Research-status Report
  • [Presentation] B Cat-dopingによるa-Si膜およびa-Si/ITO界面の電気特性の変化2017

    • Author(s)
      秋山 勝哉、大平 圭介
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Related Report
      2017 Research-status Report
  • [Presentation] Change in the electrical characteristics of a-Si films and a-sS:H/ITO interfaces by boron Cat-doping2017

    • Author(s)
      K. Akiyama and K. Ohdaira
    • Organizer
      27th International Photovoltaic Science and Engineering Conference
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research
  • [Presentation] Catalytic phosphorus and boron doping to amorphous silicon films2016

    • Author(s)
      K. Ohdaira, J. Seto, and H. Matsumura
    • Organizer
      26th International Photovoltaic Science and Engineering Conference
    • Place of Presentation
      Marina Bay Sands, Singapore
    • Year and Date
      2016-10-24
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research

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Published: 2016-04-21   Modified: 2020-03-30  

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