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Structural material joining utilizing stress migration

Research Project

Project/Area Number 16K14406
Research Category

Grant-in-Aid for Challenging Exploratory Research

Allocation TypeMulti-year Fund
Research Field Composite materials/Surface and interface engineering
Research InstitutionOsaka University

Principal Investigator

Suganuma Katsuaki  大阪大学, 産業科学研究所, 教授 (10154444)

Project Period (FY) 2016-04-01 – 2018-03-31
Project Status Completed (Fiscal Year 2017)
Budget Amount *help
¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2017: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2016: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
KeywordsAg膜 / 接合 / ストレスマイグレーション / 拡散 / ヒロック / 強度 / 固相接合 / 銀 / 材料加工・処理 / 構造・機能材料
Outline of Final Research Achievements

A silver (Ag) sputtered film was formed to a thickness of 1 μm on silica (SiO 2) which is a low expansion material and heated at 250℃. to 400℃. for 60 minutes to evaluate the state of formation of Ag hillocks and the bonding between SiO 2 Joining was carried out. In order to clarify the possibility of application to a large area, it was conducted at the following: the SiO 2 block was a 20 mm square bonding surface, the Ti bonding layer was formed under the Ag film, the bonding pressure was 0.4 MPa, the bonding atmosphere was atmospheric pressure. Three-point bending test piece of 3 mm square with 3 mm square was cut out from the bonded body and the dependence of the cutting position of the bonding strength was evaluated in connection with the hillock formation state.

Report

(3 results)
  • 2017 Annual Research Report   Final Research Report ( PDF )
  • 2016 Research-status Report
  • Research Products

    (3 results)

All 2018 2016

All Presentation (3 results) (of which Int'l Joint Research: 3 results,  Invited: 1 results)

  • [Presentation] Large area die-attachment by silver stress migration bonding for power device applications2018

    • Author(s)
      S Noh, C. Chen, H. Zhang, K. Suganuma
    • Organizer
      29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (2018年10月発表予定)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Sinter Joining and Wiring without Pressure Assist for GaN Power Device Interconnection2018

    • Author(s)
      Katsuaki Suganuma
    • Organizer
      TMS 2018 147th Annual Meeting & Exhibition Phoenix, US 2018/3/12-15
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Interconnection Technology for WBG Power Devices2016

    • Author(s)
      K.Suganuma
    • Organizer
      15th International Symposium on Microelectronics and Packaging
    • Place of Presentation
      Seoul
    • Year and Date
      2016-10-26
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research / Invited

URL: 

Published: 2016-04-21   Modified: 2019-03-29  

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