• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Hardening and new interpretation of a transition metal nitride having octahedrally coordinated silicon atoms

Research Project

Project/Area Number 16K14437
Research Category

Grant-in-Aid for Challenging Exploratory Research

Allocation TypeMulti-year Fund
Research Field Material processing/Microstructural control engineering
Research InstitutionNagaoka University of Technology

Principal Investigator

SUZUKI TSUNEO  長岡技術科学大学, 工学研究科, 准教授 (00313560)

Project Period (FY) 2016-04-01 – 2017-03-31
Project Status Completed (Fiscal Year 2016)
Budget Amount *help
¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2016: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Keywords硬質薄膜 / パルスレーザー堆積法 / 強制固溶 / ナノコンポジット / ケミカルシフト / 高圧相 / 窒化チタン / 固溶 / 材料加工・処理
Outline of Final Research Achievements

Ti-Si-N thin films have improved hardness and tribological properties comparing to those of TiN. Since the microstructure was not observed, XPS results were only evidences of the existence of amorphous SiNX. It was aimed to add Si in as solute atoms in TiN in this study. Thin films are prepared by epitaxially grown on single crystal MgO substrates by a pulse laser deposition method. The epitaxial growth of TiN and Ti-Si-N thin films on single crystal MgO substrates were prepared. There was a possiblity that the added Si was dissolved into the TiN lattice. The highest hardness of 56.9 GPa was observed. Chemical shift of Si was confirmed by X-rays photoelectron spectroscopy in the Ti-Si-N thin film. As a result, a peak of 102 eV due to Si-N-binding was obtained which had been considered to be a-SiNX. It was found that the interpretation of peak shift in Ti-Si-N may include the existence of Si atoms dissolved in TiN lattice along with the presence of a-SiNX.

Report

(2 results)
  • 2016 Annual Research Report   Final Research Report ( PDF )
  • Research Products

    (4 results)

All 2017 2016

All Journal Article (1 results) (of which Int'l Joint Research: 1 results,  Peer Reviewed: 1 results,  Open Access: 1 results,  Acknowledgement Compliant: 1 results) Presentation (3 results)

  • [Journal Article] Microstructure of Cr(N,O) thin films studied by high resolution transmission electron microscopy2017

    • Author(s)
      Kazuma Suzuki, Hisayuki Suematsu, Gordon Thorogood, Tsuneo Suzuki
    • Journal Title

      Thin Solid Films

      Volume: 625 Pages: 111-114

    • DOI

      10.1016/j.tsf.2017.01.062

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research / Acknowledgement Compliant
  • [Presentation] 水野遊星、中山忠親、末松久幸、鈴木常生2017

    • Author(s)
      パルスレーザー堆積法による(Cr,Ga)N薄膜の作製
    • Organizer
      日本金属学会春期講演大会
    • Place of Presentation
      首都大学東京
    • Year and Date
      2017-03-15
    • Related Report
      2016 Annual Research Report
  • [Presentation] 非平衡条件下でSiを高濃度に置換固溶させたTiN薄膜の実現2016

    • Author(s)
      石井義彦、池山卓、木下堪太、中山忠親、末松久幸、鈴木常生
    • Organizer
      日本金属学会秋期講演大会
    • Place of Presentation
      大阪大学
    • Year and Date
      2016-09-21
    • Related Report
      2016 Annual Research Report
  • [Presentation] 池山卓、石井義彦、木下堪太、中山忠親、末松久幸、鈴木常生2016

    • Author(s)
      不純物酸素の影響を極限まで排除した CrN 薄膜の電気伝導性
    • Organizer
      日本金属学会秋期講演大会
    • Place of Presentation
      大阪大学
    • Year and Date
      2016-09-21
    • Related Report
      2016 Annual Research Report

URL: 

Published: 2016-04-21   Modified: 2018-03-22  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi