• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Single Photon Source and Qubits Based on Lanthanide Doped GaN

Research Project

Project/Area Number 16K17507
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeMulti-year Fund
Research Field Applied materials
Research InstitutionNational Institutes for Quantum and Radiological Science and Technology

Principal Investigator

Sato Shin-ichiro  国立研究開発法人量子科学技術研究開発機構, 高崎量子応用研究所 先端機能材料研究部, 主任研究員(定常) (40446414)

Research Collaborator WAKAHARA Akihiro  
OKADA Hiroshi  
DEKI Manato  
NAKAMURA Tohru  
Project Period (FY) 2016-04-01 – 2018-03-31
Project Status Completed (Fiscal Year 2017)
Budget Amount *help
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2017: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2016: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Keywords窒化ガリウム / ランタノイド / 単一光子源 / ランタノイド元素 / 単一光子発生 / 新機能材料 / 単一光子発生源 / 量子ビット
Outline of Final Research Achievements

Praseodymium (Pr) doped GaN has the potential to be "single photon source" which is used for basic technology of quantum telecommunication. In this study, high concentration Pr doping into a microscopic region (1um x 1um x 50nm) on GaN was realized by using photolithography, ion implantation, and high temperature annealing techniques. Also, photoluminescence from Pr ions in the microscopic region was successfully observed with high-contrast by a high precision confocal microscopy at room temperature. We conclude that by father improving nano-patterning technique, activation of Pr ions, and sensitivity of the confocal microscope, the single photon emission from single Pr ions could be observed and controlled at room temperature.

Report

(3 results)
  • 2017 Annual Research Report   Final Research Report ( PDF )
  • 2016 Research-status Report
  • Research Products

    (3 results)

All 2018 2017

All Presentation (3 results) (of which Int'l Joint Research: 1 results)

  • [Presentation] 窒化ガリウム半導体に高温イオン注入したプラセオジム(Pr)の発光観測2018

    • Author(s)
      佐藤真一郎、出来真斗、中村徹、大島武
    • Organizer
      第65回応用物理学会春季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] 窒化ガリウム中の単一希土類元素からの発光観測を目指したイオン注入法および熱処理条件の検討2017

    • Author(s)
      佐藤真一郎、岡田浩、出来真斗、若原昭浩、大島武
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] Optimization of Praseodymium (Pr) Implanted GaN for Single-Photon Emission2017

    • Author(s)
      Shin-ichiro Sato, Hiroshi Okada, Manato Deki, Akihiro Wakahara, Takeshi Ohshima
    • Organizer
      29th International Conference on Defects in Semiconductors
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research

URL: 

Published: 2016-04-21   Modified: 2019-03-29  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi