| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2018: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2017: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2016: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
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| Outline of Final Research Achievements |
The magnetic anisotropy (MA) and electric-field control of MA energy of 4d transition-metal thin-film were investigated by using first-principles calculations. The MA is an important property for storage applications such as magnetic random access memories (MRAM). For the free-standing monolayer, we found that only a Ru monolayer become perpendicular MA applicable of MRAM. For a Ru monolayer on MgO substrate, both MA energy and its rate of change against electric-field are about 3 times as large as those for an Fe monolayer on MgO substrate. These results have provided a guideline for material search in the theoretical design of ferromagnetic thin-films for high density and low power consumption.
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