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Proposal of improving energy conversion efficiency of solar cell by phonon confinement

Research Project

Project/Area Number 16K17511
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeMulti-year Fund
Research Field Crystal engineering
Research InstitutionChiba University

Principal Investigator

MA BEI  千葉大学, 大学院工学研究院, 助教 (90718420)

Research Collaborator Ishitani Yoshihiro  
Miyake Hideto  
Project Period (FY) 2016-04-01 – 2019-03-31
Project Status Completed (Fiscal Year 2018)
Budget Amount *help
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2018: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2017: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2016: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
Keywordsフォノン / 窒化物 / 半導体 / GaN / LOPC / ラマン / 励起子 / キャリア / ダイナミクス
Outline of Final Research Achievements

(1) Assuming an AlGaN-based quantum well structure and phonon localization as a parameter and comparing optical phonons with acoustic phonons, it has been found that the optical phonon has the most influence on the carrier extraction rate.
(2) electron concentration distribution in high density Si-doped GaN films
As a result of fitting analysis based on the infrared reflection spectrum, a changing in the electron concentration distribution in the depth direction was obtained for the sample with an electron concentration of 3E20 cm-3 estimated by Hall measurement. From the spectrum of Raman spectroscopy, it is considered that in the high electron concentration sample, the crystallinity deterioration due to doping, the formation of the acceptor level due to the occupation of the N position of Si, and the electron concentration reduction towards the surface due to the doping to the interstitial site.

Academic Significance and Societal Importance of the Research Achievements

量子井戸構造のフォノン・キャリア動的過程計算では、光学フォノンを制御することで、励起子発光の効率改善を示した。薄膜の測定結果では、電子濃度の空間的解析を行った。材料中の転位や不純物の空間濃度解析はそれらの制御、フォノンバンド構造制御等による空間的フォノン輸送制御に役に立つ。

Report

(4 results)
  • 2018 Annual Research Report   Final Research Report ( PDF )
  • 2017 Research-status Report
  • 2016 Research-status Report
  • Research Products

    (50 results)

All 2019 2018 2017 2016 Other

All Journal Article (7 results) (of which Int'l Joint Research: 1 results,  Peer Reviewed: 7 results,  Acknowledgement Compliant: 3 results) Presentation (42 results) (of which Int'l Joint Research: 16 results,  Invited: 5 results) Remarks (1 results)

  • [Journal Article] Enhanced photocurrent in InGaN/GaN MQWs solar cells by coupling plasmonic with piezo-phototronic effect2019

    • Author(s)
      3.Chunyan Jiang, Yan Chen, Jiangman Sun, Liang Jing, Mengmeng Liu, Ting Liu,Yan Pan, Xiong Pu, Bei Ma, Weiguo Hu, Zhong Lin Wang
    • Journal Title

      Nano Energy

      Volume: 57 Pages: 300-306

    • DOI

      10.1016/j.nanoen.2018.12.036

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Electric-dipole absorption resonating with longitudinal optical phonon-plasmon system and its effect on dispersion relations of interface phonon polariton modes in metal/semiconductor-stripe structure2017

    • Author(s)
      Hironori Sakamoto, Eito Takeuchi, Kouki Yoshida, Ken Morita, Bei Ma, and Yoshihiro Ishitani
    • Journal Title

      Journal of Physics D

      Volume: 51

    • Related Report
      2017 Research-status Report
    • Peer Reviewed
  • [Journal Article] Population decay and distribution of exciton states analyzed by rate equations based on theoretical phononic and electron-collisional rate coefficients2017

    • Author(s)
      Kensuke Oki, Bei Ma, and Yoshihiro Ishitani
    • Journal Title

      Physical Review B

      Volume: 96 Issue: 20

    • DOI

      10.1103/physrevb.96.205204

    • Related Report
      2017 Research-status Report
    • Peer Reviewed
  • [Journal Article] Raman study of the quantum interference of multiple discrete states and a continuum of states in the phonon energy region of semiconductors: examples of p-type Ga0.5In0.5P films2016

    • Author(s)
      Hironori Sakamoto, Bei Ma, Ken Morita and Yoshihiro Ishitani
    • Journal Title

      Journal of Physics D

      Volume: 49 Issue: 37 Pages: 375107-375107

    • DOI

      10.1088/0022-3727/49/37/375107

    • Related Report
      2016 Research-status Report
    • Peer Reviewed
  • [Journal Article] Theoretical investigation of non-thermal equilibrium exciton dynamics in GaN based on hydrogen plasma model2016

    • Author(s)
      Tomohiro Iwahori, Bei Ma, Ken Morita, and Yoshihiro Ishitani
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 55 Issue: 5S Pages: 05FM06-05FM06

    • DOI

      10.7567/jjap.55.05fm06

    • Related Report
      2016 Research-status Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Depth profile characterization technique of electron density in GaN films by infrared reflection spectra2016

    • Author(s)
      Takaaki Kamijoh, Bei Ma, Ken Morita, and Yoshihiro Ishitani
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 55 Issue: 5S Pages: 05FH02-05FH02

    • DOI

      10.7567/jjap.55.05fh02

    • Related Report
      2016 Research-status Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Excitation and de-excitation dynamics of excitons in a GaN film based on the analysis of radiation from high-order states2016

    • Author(s)
      Yoshihiro Ishitani, Kazuma Takeuchi, Naoyuki Oizumi, Hironori Sakamoto, Bei Ma, and Ken Morita, Hideto Miyake, and Kazumasa Hiramatsu
    • Journal Title

      Journal of Physics D

      Volume: 49 Issue: 24 Pages: 245102-245102

    • DOI

      10.1088/0022-3727/49/24/245102

    • Related Report
      2016 Research-status Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Presentation] GaNの深い準位の直接光励起による発光特性の考察2019

    • Author(s)
      菊地萌,上原大輔,馬ベイ, 森田健, 三宅秀人,石谷善博
    • Organizer
      第66回応用物理学会春季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] 高濃度SiドープGaNの深さ方向結晶性の赤外およびラマン分光評価2019

    • Author(s)
      湯明川,馬ベイ, 森田 健, 上野耕平, 小林篤,藤岡洋,石谷善博
    • Organizer
      第66回応用物理学会春季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] GaN,AlN,ZnOにおける励起子の非熱平衡解析2019

    • Author(s)
      大木健輔,野町健太郎,西川智秀,馬ベイ,森田健,石谷善博
    • Organizer
      第66回応用物理学会春季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] Interactions of phonon, electron, and photon in nitride semiconductors2018

    • Author(s)
      Yoshihiro Ishitani, Kensuke Oki, Naomichi Saito, Tsubasa Yamakawa, Daisuke Uehara, Shungo Okamoto, Moe Kikuchi, Keisuke Ebisawa, Bojin Lin, Bei Ma, and Ken Morita
    • Organizer
      Intensive Discussion on Growth of Nitride Semiconductors
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Statistics of excitonic energy states based on phonon-exciton-radiation model2018

    • Author(s)
      Yoshihiro Ishitani, Kensuke Oki, Tsubasa Yamakawa, Bojin Lin, Bei Ma, and Ken Morita
    • Organizer
      International Workshop on Nitride Semiconductors
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] 赤外分光法によるGaNの高電子密度層の空間分布評価2018

    • Author(s)
      湯明川, 馬ベイ, 森田健, 石谷善博
    • Organizer
      テラヘルツ科学の最先端V
    • Related Report
      2018 Annual Research Report
  • [Presentation] ラマン散乱マッピングによるInGaNの局所フォノン場評価2018

    • Author(s)
      齋藤直道, 瀧口佳祐, 馬ベイ, 森田健, 飯田大輔, 大川和宏, 石谷善博
    • Organizer
      第79回応用物理学会秋季学術講演会名古屋国際会議場
    • Related Report
      2018 Annual Research Report
  • [Presentation] ワイドギャップ半導体における励起子-フォノン系の非熱平衡解析2018

    • Author(s)
      大木健輔, 馬ベイ, 森田 健, 石谷 善博
    • Organizer
      第2回フォノンエンジニアリング研究会
    • Related Report
      2018 Annual Research Report
  • [Presentation] フォノンプロセスを考慮した励起子ダイナミクス解析(PXRモデル)2018

    • Author(s)
      石谷 善博、大木 健輔、野町 健太郎、馬 ベイ、森田 健
    • Organizer
      2018年第65回応用物理学会春季学術講演会
    • Related Report
      2017 Research-status Report
  • [Presentation] GaN,AlN,ZnOにおける励起子の非熱平衡解析2018

    • Author(s)
      大木 健輔、野町 健太郎、西川 智秀、馬ベイ、森田 健、石谷 善博
    • Organizer
      2018年第65回応用物理学会春季学術講演会
    • Related Report
      2017 Research-status Report
  • [Presentation] GaAs/Auストライプ構造を用いたLOフォノン共鳴の赤外光輻射2018

    • Author(s)
      青木 伴晋、花田 昂樹、坂本 裕則、馬ベイ、森田 健、石谷 善博
    • Organizer
      2018年第65回応用物理学会春季学術講演会
    • Related Report
      2017 Research-status Report
  • [Presentation] 半導体/金属ストライプ構造における電気双極子形成に伴う誘電関数変化2018

    • Author(s)
      坂本 裕則、馬ベイ、森田 健、石谷 善博
    • Organizer
      2018年第65回応用物理学会春季学術講演会
    • Related Report
      2017 Research-status Report
  • [Presentation] ワイドギャップ半導体キャリア・フォノンダイナミクス2018

    • Author(s)
      石谷善博,大木健輔,野町健太郎,馬ベイ,森田健
    • Organizer
      第13回励起ナノプロセス研究会
    • Related Report
      2017 Research-status Report
  • [Presentation] GaNにおける定常状態励起子分子準位間遷移過程理論計算2017

    • Author(s)
      野町健太郎, 大木健輔, 馬ベイ, 森田健, 石谷善博
    • Organizer
      2017年第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-14
    • Related Report
      2016 Research-status Report
  • [Presentation] 磁場下赤外反射分光によるInN電子有効質量の解析2017

    • Author(s)
      松本大、馬ベイ、森田健、福井一俊、木村真一、飯塚拓也、石谷善博
    • Organizer
      2017年第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-14
    • Related Report
      2016 Research-status Report
  • [Presentation] GaNにおける励起子及び自由キャリアの密度とレート係数の理論計算2017

    • Author(s)
      大木 健輔, 野町健太郎, 馬ベイ, 森田健, 石谷善博
    • Organizer
      2017年第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-14
    • Related Report
      2016 Research-status Report
  • [Presentation] 金属/半導体複合構造におけるLOフォノン-プラズモン結合モード共鳴赤外光吸収とポラリトン損失2017

    • Author(s)
      竹内映人、坂本裕則、馬ベイ、森田健、石谷善博
    • Organizer
      2017年第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-14
    • Related Report
      2016 Research-status Report
  • [Presentation] AlN/金属ストライプ構造のラマン散乱スペクトルにおける A1-E1選択則の崩れに関する検討2017

    • Author(s)
      坂本裕則,馬ベイ, 森田健, 石谷善博
    • Organizer
      2017年第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-14
    • Related Report
      2016 Research-status Report
  • [Presentation] Phononic phenomenon in carrier dynamics and interaction with radiation in III-nitride materials2017

    • Author(s)
      Yoshihiro Ishitani, Bei Ma, Kensuke Okim Hironori Sakamoto, and Ken Morita
    • Organizer
      3rd Intensive Discussion on Growth of Nitride Semiconductors (IDGN-3)
    • Place of Presentation
      Tohoku university, Japan
    • Year and Date
      2017-01-16
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research / Invited
  • [Presentation] Theoretical calculation of rate coefficients, densities, and decay time of excitons and free carriers in GaN2017

    • Author(s)
      Kensuke Oki, Kentaro Nomachi, Bei Ma, Ken Morita, and Yoshihiro Ishitani
    • Organizer
      12th International Conference on Nitride Semiconductors (ICNS-12)
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research
  • [Presentation] Interface phonon polariton propagation and LO phonon-resonant absorption of infrared lightin AlN/metal-composites2017

    • Author(s)
      H. Sakamoto Hironori Sakamoto, Bei Ma, Ken Morita and Yoshihiro Ishitani
    • Organizer
      ICNS 12 - 12th International Conference on Nitride Semiconducto
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research
  • [Presentation] Simulation of transient carrier-exciton-phonon energy transport in GaN2017

    • Author(s)
      Bei Ma and Yoshihiro Ishitani
    • Organizer
      ICNS 12 - 12th International Conference on Nitride Semiconductors
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research
  • [Presentation] Photonic function based on longitudinal optical phonon modes of semiconductors: infrared absorption control of composite materials and destructive quantum interferences2017

    • Author(s)
      Y. Ishitani, H. Sakamoto, B. Ma, and K. Morita
    • Organizer
      EMN Optoelectronics
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research / Invited
  • [Presentation] Dielectric interaction of infrared light and electron-phonon coupling system in metal/semiconductor composites2017

    • Author(s)
      E. Takeuchi, H. Sakamoto, B. Ma, K. Morita, and Y. Ishitani
    • Organizer
      Compound Semiconductor Week
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research
  • [Presentation] C exciton and A exciton dynamic of m-plane GaN film2017

    • Author(s)
      Bei Ma, Tsubasa Yamakawa, and Yoshihiro Ishitani
    • Organizer
      The 11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017)
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research
  • [Presentation] フォノンによるGaN励起子ダイナミクス過程への影響2017

    • Author(s)
      馬ベイ, 石谷善博
    • Organizer
      第9 回ナノ構造・エピタキシャル成長講演会 招待講演
    • Related Report
      2017 Research-status Report
    • Invited
  • [Presentation] AlN/金属ストライプ構造における表面、界面ポラリトンモード観測2017

    • Author(s)
      坂本裕則,馬ベイ, 森田健, 石谷善博
    • Organizer
      第9 回ナノ構造・エピタキシャル成長講演会
    • Related Report
      2017 Research-status Report
  • [Presentation] Introduction of biexciton processes into exciton dynamics simulation for GaN based on the phononic-excitonic-radiative model2017

    • Author(s)
      Kentaro Nomachi, Ma Bei, Ken Morita, and Yoshihiro Ishitani
    • Organizer
      International Workshop on UV materials and devices (IWUMD) 2017
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research
  • [Presentation] Phonon Engineering of Semiconductors in THz frequency region2016

    • Author(s)
      Yoshihiro Ishitani, Hironori Sakamoto, Eito Takeuchi, Bei Ma, and Ken Morita
    • Organizer
      International Conference on Science and Engineering
    • Place of Presentation
      Yangon Myanmar
    • Year and Date
      2016-12-10
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research
  • [Presentation] Electronic transition dynamics of deep levels in a p-GaN film analysed by time resolved PL measurements using two excitation laser beams2016

    • Author(s)
      Hla Myo Tun, Ryo Shouji, Bei Ma, Ken Morita, Kenji Shiojima
    • Organizer
      International Conference on Science and Engineering
    • Place of Presentation
      Yangon Myanmar
    • Year and Date
      2016-12-10
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research
  • [Presentation] Simulation of carrier-exciton-phonon dynamics in GaN in non-equilibrium state2016

    • Author(s)
      Bei Ma and Yoshihiro Ishitani
    • Organizer
      Nitride Semiconductors (IWN 2016)
    • Place of Presentation
      Hilton Orlando Lake Buena Vista, Orlando, Florida
    • Year and Date
      2016-10-02
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research
  • [Presentation] Exciton dynamics and stability of GaN in non-thermal equilibrium state by the analysis taking into account the higher-order exciton states2016

    • Author(s)
      Yoshihiro Ishitani, K. Takeuchi, T. Iwahori, K. Oki, K. Nomachi, B. Ma, K. Morita, H. Miyake, and K. Hiramatsu
    • Organizer
      International Workshop on Nitride Seiconductors 2016 (IWN2016)
    • Place of Presentation
      Orland, U.S.A.
    • Year and Date
      2016-10-02
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research
  • [Presentation] p 型Ga0.5In0.5P における高濃度p型ドープ試料におけるフォノン系電磁誘起透明化のスペクトル計算2016

    • Author(s)
      坂本裕則,馬ベイ, 森田健, 石谷善博
    • Organizer
      2016年第78回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ
    • Year and Date
      2016-09-13
    • Related Report
      2016 Research-status Report
  • [Presentation] 半導体/金属複合構造におけるLOフォノン-プラズモン結合モードでの赤外光吸収2016

    • Author(s)
      竹内映人,馬ベイ, 森田健, 石谷善博
    • Organizer
      2016年第78回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ
    • Year and Date
      2016-09-13
    • Related Report
      2016 Research-status Report
  • [Presentation] GaNにおける励起子・励起子分子準位間遷移過程の理論計算2016

    • Author(s)
      野町健太郎,岩堀友洋, 大木健輔, 馬ベイ, 森田健, 石谷善博
    • Organizer
      2016年第78回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ
    • Year and Date
      2016-09-13
    • Related Report
      2016 Research-status Report
  • [Presentation] フォノンの吸放出による電子・励起子系エネルギーの励起過程2016

    • Author(s)
      馬ベイ,三宅秀人,平松和政,石谷善博
    • Organizer
      2016年第78回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ
    • Year and Date
      2016-09-13
    • Related Report
      2016 Research-status Report
  • [Presentation] Introducing of Biexciton Processes into Exciton Dynamics Simulation for GaN Based on Collisional Phononic and Radiative Model2016

    • Author(s)
      Kentaro Nomachi, Tomohiro Iwahori, Kensuke Oki, Bei Ma, Ken Morita, and Yoshihiro Ishitani
    • Organizer
      CSW2016
    • Place of Presentation
      Toyama, Japan
    • Year and Date
      2016-06-25
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research
  • [Presentation] Quantum interference of three LO modes in p-type Ga0.5In0.5P: Contribution of a trigonal phonon mode2016

    • Author(s)
      Hironori Sakamoto, Bei Ma, Ken Morita, Yoshihiro Ishitani
    • Organizer
      ISCS2016
    • Place of Presentation
      Toyama, Japan
    • Year and Date
      2016-06-25
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research
  • [Presentation] GaNにおける定常状態励起子分子準位間遷移過程理論計算2016

    • Author(s)
      野町健太郎,岩堀友洋, 大木健輔, 馬ベイ, 森田健, 石谷善博
    • Organizer
      第8回窒化物半導体結晶成長講演会
    • Place of Presentation
      京都大学
    • Year and Date
      2016-05-09
    • Related Report
      2016 Research-status Report
  • [Presentation] 非熱平衡状態におけるGaN励起子ダイナミクスの実験解析及び数値計算2016

    • Author(s)
      馬ベイ,竹内和真,三宅秀人,平松和政,石谷善博
    • Organizer
      第8回窒化物半導体結晶成長講演会
    • Place of Presentation
      京都大学
    • Year and Date
      2016-05-09
    • Related Report
      2016 Research-status Report
  • [Presentation] ラマン散乱スペクトルにおけるファノ干渉を用いた窒化物半導体の正孔濃度評価モデルの検討2016

    • Author(s)
      坂本裕則、馬ベイ, 森田健, 石谷善博
    • Organizer
      第8回窒化物半導体結晶成長講演会
    • Place of Presentation
      京都大学
    • Year and Date
      2016-05-09
    • Related Report
      2016 Research-status Report
  • [Presentation] p-Ga0.5In0.5Pにおける複数種LOフォノン系量子干渉効果および、フォノン系電磁誘起透明化のスペクトル計算2016

    • Author(s)
      坂本裕則、馬ベイ, 森田健, 石谷善博
    • Organizer
      第5回結晶成長未来塾
    • Place of Presentation
      東京農工大学小金井キャンパス(東京),
    • Related Report
      2016 Research-status Report
  • [Remarks] 量子デバイス研究室

    • URL

      http://photonics.te.chiba-u.jp/jisseki.html

    • Related Report
      2016 Research-status Report

URL: 

Published: 2016-04-21   Modified: 2020-03-30  

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