| Project/Area Number |
16K17517
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | The University of Tokyo |
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Principal Investigator |
Lin Kuan-Ting 東京大学, 生産技術研究所, 特任助教 (70772309)
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| Project Period (FY) |
2016-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2017: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2016: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
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| Keywords | Near-field microscopy / THz image / Noise image / Graphene / Current crowding effect / 走査プローブ顕微鏡 |
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| Outline of Final Research Achievements |
Detecting non-equilibrium dynamics of charge carrier in nano-device has remained to be a challenge for decades. To solve this technical issue, we used a passive THz scattering-type scanning near-field microscope (SNOM) to realize the detection.
In the graphene device, we imaged excess noise by probing electromagnetic evanescent waves (~20 THz) near the surface. In the metallic device, we imaged thermally excited evanescent wave. According to the simulation, the near-field intensity is consistent with the simulation of the current density distribution. The detected hot-position is due to the current-crowding effect. In GaAs semiconductor device, the near-field signal extending out of the constriction region was detected in non-linear region. This result originates from energy dissipation of hot electron. To sum up, the THz SNOM is proved to be powerful equipment for studying carrier dynamics in nano-device and expected for application in device industry and novel material study.
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