| Project/Area Number |
16K17520
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
TSUCHIYA Takashi 国立研究開発法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, 主任研究員 (70756387)
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| Research Collaborator |
TERABE Kazuya 国立研究開発法人・物質・材料研究機構, 国際ナノアーキテクトニクス拠点, MANA主任研究者 (60370300)
HIGUCHI Tohru 東京理科大学, 理学部第一部応用物理学科, 准教授 (80328559)
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| Project Period (FY) |
2016-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2017: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2016: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
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| Keywords | 固体イオニクス / 抵抗変化メモリ / 不揮発性メモリ / ナノイオニクス / 酸化還元トランジスタ / 原子スイッチ / 抵抗変化型メモリ / 酸化物薄膜 / イオニクス / 電子デバイス・機器 / マイクロ・ナノデバイス |
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| Outline of Final Research Achievements |
Resistive random access memory devices with field effect transistor structure were fabricated to improve operation performance and to derive novel functions related to nanoionic phenomena. H+ and electron mixed conducting WO3-based redox transistor showed reversible resistance switching due to H+ insertion/desertion. Furthermore, it showed nonvolatile and characteristic resistance switching which can be applied to develop novel neuromorphic device. SrVO3-based redox transistors were fabricated by using H+ or Li+ conducting solid electrolytes. Although similar electronic carrier doping behavior due to the monovalent cation was expected, the two devices showed completely different electronic conduction characteristic. While the H+ device showed relatively large drain current enhancement (9%), the Li+ device showed very small one (0.2%). The result indicated that used H+ or Li+ gives different effect on the local environment near V4+ ions (V-O-V angle).
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