Measurement of local carrier relaxation by combined AFM/STM
Project/Area Number |
16K17521
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Research Category |
Grant-in-Aid for Young Scientists (B)
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Allocation Type | Multi-year Fund |
Research Field |
Thin film/Surface and interfacial physical properties
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Research Institution | Chiba University |
Principal Investigator |
Inami Eiichi 千葉大学, 大学院工学研究院, 特任講師 (40420418)
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Project Period (FY) |
2016-04-01 – 2018-03-31
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Project Status |
Completed (Fiscal Year 2017)
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Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2017: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2016: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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Keywords | 走査トンネル顕微鏡 / 原子間力顕微鏡 / 薄膜・表面界面物性 / 表面・界面物性 / 走査プローブ顕微鏡 / 太陽電池 |
Outline of Final Research Achievements |
Based on combined scanning tunneling microscopy and atomic force microscopy, we have developed time-resolved-scanning probe microscopy to measure the dynamics of local electron/hole-relaxation. The principle of our method has been verified, using semiconductor surface as the test sample. It was revealed that our system can detect the tip-sample electrostatic force modulated by the local transient electron/hole. On the other hand, the experiment on the metal surface revealed that the modulation is due to the electron/hole within the probe tip. That is, at present, our system detects the relaxation of electron/hole within the probe tip, not the sample surface.
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Report
(3 results)
Research Products
(34 results)
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[Presentation] ナノクラスターを利用した室温スイッチ素子の創成2016
Author(s)
稲見 栄一, 濱田 幾太郎, 上田 啓市, 阿部 真之, 森田 清三, 杉本 宜昭
Organizer
分子研研究会 表面科学の最先端技術と分子科学 -第7回真空・表面科学若手研究会-
Place of Presentation
自然科学研究機構 分子科学研究所 明大寺キャンパス
Year and Date
2016-12-02
Related Report
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