• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

High brightness yellow and red LEDs with p-side down structure by using polarization-induced tunneling junction

Research Project

Project/Area Number 16K17533
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeMulti-year Fund
Research Field Optical engineering, Photon science
Research InstitutionNational Institute of Advanced Industrial Science and Technology (2017-2018)
Nagoya Institute of Technology (2016)

Principal Investigator

Zhang Kexiong  国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 産総研特別研究員 (80774463)

Project Period (FY) 2016-04-01 – 2019-03-31
Project Status Completed (Fiscal Year 2018)
Budget Amount *help
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2017: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2016: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
KeywordsGaN / LED / Polarization Engineering / Tunneling Junction / polarization / tunneling junction / Long Wavelength / Polarization Effect / Semiconductor Device / 2-dimensional hole gas / エピタキシャル / 量子井戸 / 電子デバイス・機器 / 電子・電気材料 / 結晶成長
Outline of Final Research Achievements

The theory of polarization engineering was applied into the design of device structure of InGaN/GaN LED. At the end of the project, new device processing and epitaxial structure for long wavelength LED was developed.

Academic Significance and Societal Importance of the Research Achievements

This research propose a novel device structure with advanced device theory toward the issue of developing high efficiency red and yellow InGaN/GaN LED.
The research has great potential in overcome the basic problem of InGaN/GaN LED to mitigate "the green gap".

Report

(4 results)
  • 2018 Annual Research Report   Final Research Report ( PDF )
  • 2017 Research-status Report
  • 2016 Research-status Report
  • Research Products

    (12 results)

All 2019 2018 2017 2016

All Journal Article (4 results) (of which Int'l Joint Research: 3 results,  Peer Reviewed: 4 results,  Acknowledgement Compliant: 2 results,  Open Access: 1 results) Presentation (5 results) (of which Int'l Joint Research: 3 results) Funded Workshop (3 results)

  • [Journal Article] Demonstration of fully vertical GaN-on-Si Schottky diode2017

    • Author(s)
      Zhang K.、Mase S.、Nakamura K.、Hamada T.、Egawa T.
    • Journal Title

      Electronics Letters

      Volume: 53 Issue: 24 Pages: 1610-1611

    • DOI

      10.1049/el.2017.3166

    • Related Report
      2017 Research-status Report
    • Peer Reviewed
  • [Journal Article] The investigation of interfacial chemical state and band alignment in sputter-deposited CaF2/p-GaN heterojunction by angle-resolved X-ray photoelectron spectroscopy2016

    • Author(s)
      Kexiong Zhang, Meiyong Liao, Masatomo Sumiya, Yasuo Koide, Liwen Sang
    • Journal Title

      Journal of Applied Physics

      Volume: 120 Issue: 18 Pages: 185305-185305

    • DOI

      10.1063/1.4967394

    • Related Report
      2016 Research-status Report
    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] Electrical hysteresis in p-GaN metal-oxide- semiconductor capacitor with atomic-layer-deposited Al2O3 as gate dielectric2016

    • Author(s)
      Kexiong Zhang, Meiyong Liao, Masataka Imura, Toshihide Nabatame, Akihiko Ohi, Masatomo Sumiya, Yasuo Koide, and Liwen Sang
    • Journal Title

      Applied Physics Express

      Volume: 9 Issue: 12 Pages: 121002-121002

    • DOI

      10.7567/apex.9.121002

    • Related Report
      2016 Research-status Report
    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas2016

    • Author(s)
      Kexiong Zhang, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Liwen Sang
    • Journal Title

      Scientific Reports

      Volume: 6 Issue: 1

    • DOI

      10.1038/srep23683

    • Related Report
      2016 Research-status Report
    • Peer Reviewed / Open Access / Int'l Joint Research
  • [Presentation] Fabrication of InGaN/GaN Nanopillars byNeutral Beam Etching: Towards Directional Micro-LED in Top-down Structure2019

    • Author(s)
      Kexiong Zhang
    • Organizer
      JSAP 2019 spring meeting
    • Related Report
      2018 Annual Research Report
  • [Presentation] Nanocolumns of InGaN/GaN MQWs Fabricated by Neutral Beam Etching for Directional Micro-LEDs2018

    • Author(s)
      Kexiong Zhang
    • Organizer
      JSAP 2018 autumn meeting
    • Related Report
      2018 Annual Research Report
  • [Presentation] Nanocolumns of InGaN/GaN MQWs Fabricated by Neutral Beam Etching for Directional Micro-LEDs2018

    • Author(s)
      Kexiong Zhang
    • Organizer
      The International Workshop on Nitride Semiconductors 2018
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] InGaN/GaN Heterostructure P-Channel Metal-Oxide-Semiconductor Field Effect Transistor by Using Polarization-Induced Two-Dimensional Hole Gas2016

    • Author(s)
      Kexiong Zhang, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, and Liwen Sang
    • Organizer
      International Workshop on Nitride Semiconductors (IWN 2016)
    • Place of Presentation
      Orlando, Florida, USA
    • Year and Date
      2016-10-02
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research
  • [Presentation] The investigation of GaN-based P-Channel Metal-Oxide-Semiconductor Field Effect Transistor2016

    • Author(s)
      Kexiong Zhang, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, and Liwen Sang
    • Organizer
      The international workshop on UV materials and devices (IWUMD-2016)
    • Place of Presentation
      Peking University, Beijing, China.
    • Year and Date
      2016-07-27
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research
  • [Funded Workshop] The International Workshop on Nitride Semiconductors 20182018

    • Related Report
      2018 Annual Research Report
  • [Funded Workshop] International Workshop on Nitride Semiconductors (IWN 2016)2016

    • Place of Presentation
      Orlando, Florida,USA
    • Year and Date
      2016-10-02
    • Related Report
      2016 Research-status Report
  • [Funded Workshop] The international workshop on UV materials and devices (IWUMD-2016)2016

    • Place of Presentation
      Peking University, Beijing, China
    • Year and Date
      2016-07-27
    • Related Report
      2016 Research-status Report

URL: 

Published: 2016-04-21   Modified: 2020-03-30  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi