High brightness yellow and red LEDs with p-side down structure by using polarization-induced tunneling junction
| Project/Area Number |
16K17533
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Optical engineering, Photon science
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| Research Institution | National Institute of Advanced Industrial Science and Technology (2017-2018)
Nagoya Institute of Technology (2016) |
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Principal Investigator |
Zhang Kexiong 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 産総研特別研究員 (80774463)
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| Project Period (FY) |
2016-04-01 – 2019-03-31
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| Project Status |
Completed (Fiscal Year 2018)
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| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2017: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2016: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Keywords | GaN / LED / Polarization Engineering / Tunneling Junction / polarization / tunneling junction / Long Wavelength / Polarization Effect / Semiconductor Device / 2-dimensional hole gas / エピタキシャル / 量子井戸 / 電子デバイス・機器 / 電子・電気材料 / 結晶成長 |
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| Outline of Final Research Achievements |
The theory of polarization engineering was applied into the design of device structure of InGaN/GaN LED. At the end of the project, new device processing and epitaxial structure for long wavelength LED was developed.
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| Academic Significance and Societal Importance of the Research Achievements |
This research propose a novel device structure with advanced device theory toward the issue of developing high efficiency red and yellow InGaN/GaN LED.
The research has great potential in overcome the basic problem of InGaN/GaN LED to mitigate "the green gap".
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Report
(4 results)
Research Products
(12 results)
