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Development of purely-electronic resistive switching devices based on field-induced Mott transition

Research Project

Project/Area Number 16K18073
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeMulti-year Fund
Research Field Electronic materials/Electric materials
Research InstitutionHokkaido University

Principal Investigator

Fukuchi Atsushi  北海道大学, 情報科学研究科, 助教 (00748890)

Project Period (FY) 2016-04-01 – 2019-03-31
Project Status Completed (Fiscal Year 2018)
Budget Amount *help
¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
Fiscal Year 2018: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2017: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2016: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Keywords酸化物エレクトロニクス / 金属絶縁体転移 / 抵抗変化メモリ / エピタキシャル成長 / 強相関電子系 / エピタキシャル薄膜 / 固相エピタキシャル成長法 / 抵抗変化型メモリ / ルテニウム酸化物 / モット転移 / 酸化物薄膜 / 強相関電子材料 / 強相関エレクトロニクス / 電子・電気材料 / 先端機能デバイス / ナノ材料 / マイクロ・ナノデバイス
Outline of Final Research Achievements

For metal-insulator transition in strongly correlated materials, increasing attention has been paid to the electronics applications, such as resistive switching memory based on the stable and controllable changes in the electrical resistance. In addition, some recent studies have suggested the occurrence of a new type of metal-insulator transition in such materials: “field-induced” metal-insulator transition where the transition is induced by purely electrical effects not by thermal effects through Joule heating. To clarify the mechanism and develop the applications, growth of epitaxial thin films and fabrication of device structures were performed for the electrical-type metal-insulator transition materials in the present study. Growth of single-crystalline epitaxial thin films was successfully achieved for Ca2RuO4, which is one of the most actively studied materials. Moreover, a field-induced resistive transition was clearly demonstrated in the epitaxial films of Ca2RuO4.

Academic Significance and Societal Importance of the Research Achievements

電場誘起型の金属絶縁体転移物質は、固体物理学的に未解明の現象を多く含む興味深い物質群であるとともに、電子デバイス応用に対しても高い可能性を持つ事が指摘されているが、良質な薄膜の作製が困難であるために、物性理解やデバイス開発が進展されていない状況にある。本研究では電場誘起型の金属絶縁体物質として近年注目を集めているCa2RuO4において、良質な薄膜の成長に初めて成功し、また薄膜での電場誘起型転移の観測にも成功した。これらの結果は、金属絶縁体転移に関わる多くの未解明現象の解明と、将来的にはメモリ素子の飛躍的な性能向上にもつながる事が期待される、重要な成果である。

Report

(4 results)
  • 2018 Annual Research Report   Final Research Report ( PDF )
  • 2017 Research-status Report
  • 2016 Research-status Report
  • Research Products

    (64 results)

All 2019 2018 2017 2016

All Journal Article (8 results) (of which Int'l Joint Research: 2 results,  Peer Reviewed: 7 results,  Acknowledgement Compliant: 1 results) Presentation (55 results) (of which Int'l Joint Research: 24 results,  Invited: 6 results) Book (1 results)

  • [Journal Article] Smooth Interfacial Scavenging for Resistive Switching Oxide via the Formation of Highly Uniform Layers of Amorphous TaOx2018

    • Author(s)
      Tsurumaki-Fukuchi Atsushi、Nakagawa Ryosuke、Arita Masashi、Takahashi Yasuo
    • Journal Title

      ACS Applied Materials & Interfaces

      Volume: 10 Issue: 6 Pages: 5609-5617

    • DOI

      10.1021/acsami.7b15384

    • Related Report
      2017 Research-status Report
    • Peer Reviewed
  • [Journal Article] EELS Analysis of Oxygen Scavenging Effect in a Resistive Switching Structure of Pt/Ta/SrTiO3/Pt2018

    • Author(s)
      Tsurumaki-Fukuchi Atsushi、Nakagawa Ryosuke、Arita Masashi、Takahashi Yasuo
    • Journal Title

      MRS Advances

      Volume: - Issue: 33 Pages: 1-6

    • DOI

      10.1557/adv.2018.12

    • Related Report
      2017 Research-status Report
    • Peer Reviewed
  • [Journal Article] Electrical Characteristics of Single-Electron Transistor Made of Fe-MgF2 Single-Layer Granular Thin Films2018

    • Author(s)
      Asai Yuki、Honjo Shusaku 、Gyakushi Takayuki、Tsurumaki-Fukuchi Atsushi、Arita Masashi、Takahashi Yasuo
    • Journal Title

      IEICE Technical Report

      Volume: 117 Pages: 1-6

    • Related Report
      2017 Research-status Report
  • [Journal Article] In-situElectron Microscopy of Cu Movement in MoOx/Al2O3Bilayer CBRAM during Cyclic Switching2017

    • Author(s)
      Ishikawa Ryusuke、Hirata Shuichiro、Tsurumaki-Fukuchi Atsushi、Arita Masashi、Takahashi Yasuo、Kudo Masaki、Matsumura Syo
    • Journal Title

      ECS Transactions

      Volume: 80 Issue: 10 Pages: 903-910

    • DOI

      10.1149/08010.0903ecst

    • Related Report
      2017 Research-status Report
    • Peer Reviewed
  • [Journal Article] Observation of Conductive Filament in CBRAM at Switching Moment2017

    • Author(s)
      Muto Satoshi、Yonesaka Ryota、Tsurumaki-Fukuchi Atsushi、Arita Masashi、Takahashi Yasuo
    • Journal Title

      ECS Transactions

      Volume: 80 Issue: 10 Pages: 895-902

    • DOI

      10.1149/08010.0895ecst

    • Related Report
      2017 Research-status Report
    • Peer Reviewed
  • [Journal Article] (Invited) Evaluation of Coupled Triple Quantum Dots with Compact Device Structure2017

    • Author(s)
      Takahashi Yasuo、Uchida Takafumi、Tsurumaki-Fukuchi Atsushi、Arita Masashi、Fujiwara Akira
    • Journal Title

      ECS Transactions

      Volume: 80 Issue: 4 Pages: 173-180

    • DOI

      10.1149/08004.0173ecst

    • Related Report
      2017 Research-status Report
    • Peer Reviewed
  • [Journal Article] Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices2017

    • Author(s)
      Y. Yang, Y. Takahashi, A. Tsurumaki-Fukuchi, M. Arita, M. Moors, M. Buckwell, A. Mehonic, A. Kenyon
    • Journal Title

      Journal of Electroceramics

      Volume: - Issue: 1-4 Pages: 73-93

    • DOI

      10.1007/s10832-017-0069-y

    • Related Report
      2016 Research-status Report
    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] Capacitance evaluation of compact silicon triple quantum dots by simultaneous gate voltage sweeping2016

    • Author(s)
      T. Uchida, M. Jo, A. Tsurumaki-Fukuchi, M. Arita, A. Fujiwara, Y. Takahashi
    • Journal Title

      Journal of Applied Physics

      Volume: 120 Issue: 23 Pages: 234502-234502

    • DOI

      10.1063/1.4972197

    • Related Report
      2016 Research-status Report
    • Peer Reviewed / Int'l Joint Research
  • [Presentation] Fast and uniform interface reactions of tantalum oxide and their applications into memory devices2019

    • Author(s)
      A. Tsurumaki-Fukuchi, M. Arita, and Y. Takahashi
    • Organizer
      the 2019 Collaborative Conference on Materials Research (CCMR2019)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] 単層Fe-MgF2グラニュラー薄膜単電子トランジスタにおける等周期クーロン振動特性の解析2019

    • Author(s)
      瘧師 貴幸, 浅井 佑基, 福地 厚, 有田 正志, 高橋 庸夫
    • Organizer
      第66回応用物理学会春季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] 高抵抗動作を目指したCu上部電極型Ta2O5-d抵抗変化多値メモリ2019

    • Author(s)
      李 遠霖, 福地 厚, 有田 正志, 高橋 庸夫, 森江 隆
    • Organizer
      第66回応用物理学会春季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] 低電流動作時のCu/MoOx/Al2O3 CBRAMにおけるCu-CFの観察2019

    • Author(s)
      石川 竜介, 有馬 克紀, 福地 厚, 有田 正志, 高橋 庸夫, 工藤 昌輝, 松村 晶
    • Organizer
      第66回応用物理学会春季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] CBRAMのフォーミング過程におけるTEMその場観察2019

    • Author(s)
      武藤 恵, 酒井 慎弥, 福地 厚, 有田 正志, 高橋 庸夫
    • Organizer
      第66回応用物理学会春季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] 界面エンジニアリング効果によるPt/Nb:SrTiO3接合の伝導特性の制御2019

    • Author(s)
      蔦 佑輔, 福 地厚, 有田 正志, 高橋 庸夫
    • Organizer
      第54回応用物理学会北海道支部学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] Ag/WOx/Pt平面型CBRAMにおける金属イオン移動のTEMその場観察2019

    • Author(s)
      酒井 慎弥, 武藤 恵, 福地 厚, 有田 正志, 高橋 庸夫
    • Organizer
      第54回応用物理学会北海道支部学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] 単層FeMgF2グラニュー単電子トンジスタにおける等周期クーロン振動の解析2019

    • Author(s)
      瘧師 貴幸, 浅井 佑基, 福地 厚, 有田 正志, 高橋 庸夫
    • Organizer
      第54回応用物理学会北海道支部学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] Observations on the interfacial redox reactions in metal-oxide memristive devices2018

    • Author(s)
      A. Tsurumaki-Fukuchi, M. Arita, and Y. Takahashi
    • Organizer
      EMN Meeting on Titanium-Oxides
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Double-gate single-electron transistor characteristics of single-layer Fe-MgF2 granular films2018

    • Author(s)
      T. Gyakushi, Y. Asai, A. Tsurumaki-Fukuchi, M. Arita and Y. Takahashi
    • Organizer
      the 31st International Microprocesses and Nanotechnology Conference (MNC2018)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Shape change dynamics of Cu filament in double layer CBRAM2018

    • Author(s)
      R. Ishikawa, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi, M. Kudo, and S. Matsumura
    • Organizer
      the 31st International Microprocesses and Nanotechnology Conference (MNC2018)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Analog memory devices for time-domain weighted-sum calculation circuits2018

    • Author(s)
      K. Yamashita, M. Harada, T. Morie, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi, S. Samukawa
    • Organizer
      the 15th International Conference on Flow Dynamics (ICFD2018)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Multilevel memory characteristics of Ta/Ta2O5-d ReRAM for the application of neural network2018

    • Author(s)
      Y. Li, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi, H. Ando, T. Morie, and S. Samukawa
    • Organizer
      the 15th International Conference on Flow Dynamics (ICFD2018)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Enhanced defect formation at metal/oxide interfaces and its application to resistive memory devices2018

    • Author(s)
      A. Tsurumaki-Fukuchi, M. Arita, and Y. Takahashi
    • Organizer
      the 7th International Symposium on Transparent on Conductive Materials (TCM2018)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] ダブルゲートFe-MgF2単電子トランジスタの作製と評価2018

    • Author(s)
      瘧師 貴幸, 浅井 佑基, 福地 厚, 有田 正志, 高橋 庸夫
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] 単層Fe-MgF2 グラニュラー薄膜を用いた単電子トランジスタの特性評価2018

    • Author(s)
      浅井 佑基, 瘧師 貴幸, 福地 厚, 有田 正志, 高橋 庸夫
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] TaOx界面層を用いたPt/Nb:SrTiO3接合の伝導特性制御2018

    • Author(s)
      蔦 佑輔, 福地 厚, 有田 正志, 高橋 庸夫
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] Cu上部電極を用いたTa2O5-d 抵抗変化型多値メモリ特性の実現2018

    • Author(s)
      李 遠霖, 勝村 玲音, M. Grönroos, 福地 厚, 有田 正志, 高橋 庸夫, 安藤 秀幸, 森江 隆
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] Cu/MoOx/Al2O3 CBRAMの微小領域におけるフィラメント形状観察2018

    • Author(s)
      石川 竜介, 福地 厚, 有田 正志, 高橋 庸夫, 工藤 昌輝, 松村 晶
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] Tunnel Magnetocapacitance in Single-layered Fe/MgF2 Granular Films2018

    • Author(s)
      R. Msiska, S. Honjo, Y. Asai, M. Arita, A. Tsurumaki-Fukuchi, Y. Takahashi, N. Hoshino, T. Akutagawa, O. Kitakami, M. Fujioka, J. Nishii, and H. Kaiju
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] Study on tunnel magnetocapacitance in Fe/MgF2 Nanogranular films2018

    • Author(s)
      R. Msiska, S. Honjo, Y. Asai, M. Arita, A. Tsurumaki-Fukuchi, Y. Takahashi, N. Hoshino, T. Akutagawa, O. Kitakami, M. Fujioka, J. Nishii, and H. Kaiju
    • Organizer
      第4回マテリアルズ・インフォマティクス基礎研究会
    • Related Report
      2018 Annual Research Report
  • [Presentation] Study on interfacial redox reactions of tantalum as a good scavenger material in ReRAM devices2018

    • Author(s)
      A. Tsurumaki-Fukuchi, M. Arita, and Y. Takahashi
    • Organizer
      the 2018 International Conference on Solid State Devices and Materials (SSDM2018)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] In-situ electron microscopy to investigate resistive RAM operations2018

    • Author(s)
      M. Arita, A. Tsurumaki-Fukuchi, and Y. Takahashi
    • Organizer
      the 2018 Collaborative Conference on Materials Research (CCMR2018)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] In-situ TEM investigation on instability of ReRAM switching2018

    • Author(s)
      S. Muto, S. Sakai, A. Tsurumaki-Fukuchi, M. Arita, and Y. Takahashi
    • Organizer
      EMRS 2018 Spring Meeting
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Investigation for multilevel memory vapability of ReRAM using Ta2O5-d insulator2018

    • Author(s)
      Y. Li, R. Katsumura, M. K. Grönroos, A. Tsurumaki-Fukuchi, M. Arita, H. Ando, T. Morie, and Y. Takahashi
    • Organizer
      2018 Silicon Nanoelectronics Workshop (SNW2018)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 電流経路TEM観察のための簡易型EBACシステムの試作2018

    • Author(s)
      藤田 順, 福地 厚, 有田 正志, 高橋 庸夫
    • Organizer
      日本顕微鏡学会第74回学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] Oxygen distribution around filament in Ta-O resistive RAM fabricated using 40 nm CMOS technology2018

    • Author(s)
      M. Arita, A. Tsurumaki-Fukuchi, Y. Takahashi, Z. Wei, S. Muraoka, S. Ito, and S. Yoneda
    • Organizer
      2018 IEEE 10th International Memory Workshop (IMW 2018)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 固相エピタキシャル成長法による常圧成長Ca2RuO4薄膜の伝導特性2018

    • Author(s)
      安田 将太、福地 厚、有田 正志、高橋 庸夫
    • Organizer
      第65回応用物理学会春季学術講演会
    • Related Report
      2017 Research-status Report
  • [Presentation] CBRAMの動作不安定性に関するTEMその場観察2018

    • Author(s)
      武藤 恵、酒井 慎弥、福地 厚、有田 正志、高橋 庸夫
    • Organizer
      第65回応用物理学会春季学術講演会
    • Related Report
      2017 Research-status Report
  • [Presentation] 酸素欠陥を導入したTa2O5-δ抵抗変化型多値メモリ特性の検討2018

    • Author(s)
      李 遠霖、勝村 玲音、Mika Gronroos、福地 厚、有田 正志、高橋 庸夫、安藤 秀幸、森江 隆
    • Organizer
      第65回応用物理学会春季学術講演会
    • Related Report
      2017 Research-status Report
  • [Presentation] 単層Fe-MgF2グラニュラー薄膜を用いた単電子トランジスタの電気特性2018

    • Author(s)
      浅井 佑基、本庄 周作、瘧師 貴幸、福地 厚、有田 正志、高橋 庸夫
    • Organizer
      電子情報通信学会電子デバイス研究会
    • Related Report
      2017 Research-status Report
  • [Presentation] 固相エピタキシャル成長法による金属性Ca2RuO4薄膜の作製2018

    • Author(s)
      安田 将太、福地 厚、有田 正志、高橋 庸夫
    • Organizer
      第53回応用物理学会北海道支部学術講演会
    • Related Report
      2017 Research-status Report
  • [Presentation] 反応性スパッタ法により作製したTiOx系ReRAMの多値特性2018

    • Author(s)
      福本 泰士、福地 厚、有田 正志、高橋 庸夫
    • Organizer
      第53回応用物理学会北海道支部学術講演会
    • Related Report
      2017 Research-status Report
  • [Presentation] 超平坦a-TaOx薄膜を用いた抵抗変化メモリ動作における導電性フィラメントの直接観察2017

    • Author(s)
      福地 厚, 有田 正志, 片瀬 貴義, 太田 裕道, 高橋 庸夫
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜, 横浜
    • Year and Date
      2017-03-16
    • Related Report
      2016 Research-status Report
  • [Presentation] ナノギャップ型抵抗変化メモリにおけるギャップ間金属移動の動的観察2017

    • Author(s)
      武藤 恵、酒井 慎弥、福地 厚、有田 正志、高橋 庸夫
    • Organizer
      平成29年度日本顕微鏡学会北海道支部学術講演会
    • Related Report
      2017 Research-status Report
  • [Presentation] Investigations on Oxygen Scavenging Effect at Metal/Oxide Interfaces for Reliable Memory Applications2017

    • Author(s)
      R. Nakagawa, A. Tsurumaki-Fukuchi, M. Arita, and Y. Takahashi
    • Organizer
      2017 MRS Fall Meeting & Exhibit
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research
  • [Presentation] ReRAM Switching in Planar-Type Structures of Ag/WOx/Pt Studied by in-Situ TEM2017

    • Author(s)
      S. Sakai, S. Muto, A. Tsurumaki-Fukuchi, M. Arita, and Y. Takahashi
    • Organizer
      the 29th Internat. Microprocesses and Nanotechno. Conf. (MNC 2017)
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research
  • [Presentation] Single Electron Transistor Characteristics of Fe-MgF2 Single-Layer Granular Films2017

    • Author(s)
      Y. Asai, S. Honjo, A. Tsurumaki-Fukuchi, M. Arita, and Y. Takahashi
    • Organizer
      the 29th Internat. Microprocesses and Nanotechno. Conf. (MNC 2017)
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research
  • [Presentation] Realization of Analog Memory Using Ta2O5 Based ReRAM for the Application of Neural Network2017

    • Author(s)
      Y. Li, R. Katsumura, M. K. Gronroos, A. Tsurumaki-Fukuchi, M. Arita, H. Andoh, and T. Morie
    • Organizer
      the 14th International Conference on Flow Dynamics (ICFD2017)
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research
  • [Presentation] In-Situ Electron Microscopy of Cu Movement in MoOx/Al2O3 Bilayer CBRAM during Cyclic Switching Process2017

    • Author(s)
      R. Ishikawa, S. Hirata, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi, M. Kudo, and S. Matsumura
    • Organizer
      the 232nd ECS Meeting
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research
  • [Presentation] Observation of Conductive Filament in CBRAM at Switching Moment2017

    • Author(s)
      S. Muto, R. Yonesaka, A. Tsurumaki-Fukuchi, M. Arita, and Y. Takahashi
    • Organizer
      the 232nd ECS Meeting
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research
  • [Presentation] Evaluation of Coupled Triple Quantum Dots with Compact Device Structure2017

    • Author(s)
      Y. Takahashi, T. Uchida, A. Tsurumaki-Fukuchi, M. Arita, and A. Fujiwara
    • Organizer
      the 232nd ECS Meeting
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research / Invited
  • [Presentation] In-situ Observation of Cu Residuals in Resistance Switching Failure of MoOx/Al2O3 CBRAM2017

    • Author(s)
      M. Arita, R. Ishikawa, S. Hirata, A. Turumaki-Fukuchi, and Y. Takahashi
    • Organizer
      2017 Internat. Conf. Sol. Stat. Dev. Mater. (SSDM 2017)
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research
  • [Presentation] Fe-MgF2グラニュラー膜における単電子トランジスタ特性の評価2017

    • Author(s)
      浅井 佑基、本庄 周作、福地 厚、有田 正志、高橋 庸夫
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Related Report
      2017 Research-status Report
  • [Presentation] ナノスケールReRAM/CBRAMデバイスのIn-situ TEM解析2017

    • Author(s)
      高橋 庸夫、福地 厚、有田 正志
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Related Report
      2017 Research-status Report
    • Invited
  • [Presentation] Ag/WOx/Pt平面型抵抗変化メモリのTEMその場観察2017

    • Author(s)
      酒井 慎弥、武藤 恵、福地 厚、有田 正志、高橋 庸夫
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Related Report
      2017 Research-status Report
  • [Presentation] 金属/酸化物接合における界面金属層による酸素欠陥生成効果の評価2017

    • Author(s)
      中川 良祐、福地 厚、有田 正志、高橋 庸夫
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Related Report
      2017 Research-status Report
  • [Presentation] RRAM Device Operation Investigated using In-situ TEM2017

    • Author(s)
      M. Arita, A. Tsurumaki-Fukuchi, and Y. Takahashi
    • Organizer
      Non-Volatile Memory Technology Symposium 2017 (NVMTS2017)
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research
  • [Presentation] Evaluation of Multilevel Memory Capability of ReRAM Using Ta2O52017

    • Author(s)
      Y. Li, R. Katsumura, M. K. Grönroos, A. Tsurumaki‐Fukuchi, M. Arita, H. Ando, T. Morie, and Y. Takahashi
    • Organizer
      Silicon Nanoelectronics Workshop 2017
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research
  • [Presentation] In-situ TEM法によるMoOx/Al2O3 抵抗変化メモリのデバイス劣化観察2017

    • Author(s)
      石川 竜介、平田 周一郎、福地 厚、 有田 正志、高橋 庸夫
    • Organizer
      第73回日本顕微鏡学会学術講演会
    • Related Report
      2017 Research-status Report
  • [Presentation] 反応性スパッタ法により作製したTiOx系ReRAMの電気特性評価2017

    • Author(s)
      福本 泰士, 勝村 玲音, 福地 厚, 有田 正志, 高橋 庸夫
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜, 横浜
    • Related Report
      2016 Research-status Report
  • [Presentation] MoOx/Al2O3CBRAMの繰返しスイッチ過程におけるCu移動の直接観察2017

    • Author(s)
      平田 周一郎, 石川 竜介, 福地 厚, 有田 正志, 高橋 庸夫, 工藤 昌輝, 松村 晶
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜, 横浜
    • Related Report
      2016 Research-status Report
  • [Presentation] Switching operation of double-layer conductive bridging RAM investigated using in-situ transmission electron microscopy2016

    • Author(s)
      M. Arita, S. Hirata, A. Takahashi, T. Hiroi, M. Jo, A. Tsurumaki-Fukuchi, Y. Takahashi
    • Organizer
      2016 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Tsukuba Internat. Cong. Center, Tsukuba
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research
  • [Presentation] 高均一TaOx薄膜を用いた抵抗変化動作の局所的評価2016

    • Author(s)
      福地 厚, 有田 正志, 片瀬 貴義, 太田 裕道, 高橋 庸夫
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ,新潟
    • Related Report
      2016 Research-status Report
  • [Presentation] Investigation of resistive switching memory effect in a-TaOx films with atomically flat surface2016

    • Author(s)
      A. Tsurumaki-Fukuchi, M. Arita, T. Katase, H. Ohta
    • Organizer
      24th International Colloquium on Scanning Probe Microscopy
    • Place of Presentation
      Hawaii Convention Center, Honolulu, HI, USA
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research
  • [Book] Memristor and Memristive Neural Networks2018

    • Author(s)
      Masashi Arita, Atsushi Tsurumaki-Fukuchi and Yasuo Takahashi
    • Total Pages
      314
    • Publisher
      In Tech
    • ISBN
      9789535139485
    • Related Report
      2018 Annual Research Report

URL: 

Published: 2016-04-21   Modified: 2020-03-30  

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