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Control of Polarization-Induced Electric Field in Nitride-Semiconductor-Based Devices

Research Project

Project/Area Number 16K18074
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeMulti-year Fund
Research Field Electronic materials/Electric materials
Research InstitutionTohoku University

Principal Investigator

Tanikawa Tomoyuki  東北大学, 金属材料研究所, 講師 (90633537)

Research Collaborator MATSUOKA takashi  
Project Period (FY) 2016-04-01 – 2019-03-31
Project Status Completed (Fiscal Year 2018)
Budget Amount *help
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2018: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2017: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2016: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Keywords変調分光 / 窒化物半導体 / 分極電界 / 有機金属気相成長 / 極性・分極 / InGaN / 発光ダイオード / 高電子移動度トランジスタ / 有機金属気相成長法 / 分極 / トランジスタ
Outline of Final Research Achievements

InGaN-based light-emitting diodes on GaN films with various crystal orientation were fabricated, and internal electric fields were evaluated using a electroreflectance method. Electroreflectance signals were originated from internal electric fields applied in GaN barrier and InGaN well layers. From the signal phase and the signal period, direction and intensity of electric fields could experimentally be measured.
N-polar InGaN/AlGaN/GaN-based heterostructure field-effect transistors were fabricated and concentration of two-dimensonal electron gas was investigated. first, GaN/AlGaN/GaN structures were fabricated and alloy composition and thickness of AlGaN were optimized. Two dimensional electron gas in N-polar GaN/AlGaN/GaN had a high density of two-dimensional electron gas with 1E13 cm-2. InGaN channel could enhance the electron density. When InN alloy composition of was 0.11, electron concentration was twice.

Academic Significance and Societal Importance of the Research Achievements

窒化物半導体などの次世代半導体材料は強い分極を有し、誘電体的性質がデバイス性能を左右する。このような観点でデバイス開発を俯瞰すると、分極効果を定量評価する技術が必要といえる。本研究ではInGaN/GaN発光ダイオードとGaN/AlGaN/GaNヘテロ接合電界効果トランジスタを例として、デバイス動作時の電界強度を定量評価する技術と分極効果を制御する技術について研究を展開した。その結果、分極電界の定量評価に変調分光法が有用であることを示し、混晶などの分極不連続量の制御により電子の偏りを制御できることを示した。これらの成果は、発光デバイスや電子デバイスの性能改善に向けて役立つ知見といえる。

Report

(4 results)
  • 2018 Annual Research Report   Final Research Report ( PDF )
  • 2017 Research-status Report
  • 2016 Research-status Report
  • Research Products

    (25 results)

All 2019 2018 2017 2016 Other

All Journal Article (7 results) (of which Int'l Joint Research: 1 results,  Peer Reviewed: 7 results,  Open Access: 1 results) Presentation (17 results) (of which Int'l Joint Research: 11 results,  Invited: 2 results) Remarks (1 results)

  • [Journal Article] Multiphoton-Excitation Photoluminescence as a Tool for Defect Characterization of GaN Crystal2019

    • Author(s)
      Tanikawa Tomoyuki
    • Journal Title

      Materia Japan

      Volume: 58 Issue: 3 Pages: 144-149

    • DOI

      10.2320/materia.58.144

    • NAID

      130007606778

    • ISSN
      1340-2625, 1884-5843
    • Year and Date
      2019-03-01
    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Observation of Threading Dislocation in Thick GaN Crystal Using Inelastically Scattered Electron2018

    • Author(s)
      Kiguchi Takanori、Shiraishi Takahisa、Konno Toyohiko J.、Tanikawa Tomoyuki
    • Journal Title

      Materia Japan

      Volume: 57 Issue: 12 Pages: 615-615

    • DOI

      10.2320/materia.57.615

    • NAID

      130007538920

    • ISSN
      1340-2625, 1884-5843
    • Year and Date
      2018-12-01
    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Crystal Growth Technology of N-polar Nitride Semiconductors by Metalorganic Vapor Phase Epitaxy2018

    • Author(s)
      谷川 智之、プラスラットスック キャッティウット、木村 健司、窪谷 茂幸、松岡 隆志
    • Journal Title

      Journal of the Japanese Association for Crystal Growth

      Volume: 45 Issue: 1 Pages: n/a

    • DOI

      10.19009/jjacg.3-45-1-01

    • NAID

      130006727544

    • ISSN
      0385-6275, 2187-8366
    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] N-polar GaN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor formed on sapphire substrate with minimal step bunching2018

    • Author(s)
      K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, T. Suemitsu, T. Matsuoka
    • Journal Title

      Applied Physics Express

      Volume: 11 Issue: 1 Pages: 015503-015503

    • DOI

      10.7567/apex.11.015503

    • NAID

      210000136090

    • Related Report
      2017 Research-status Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Three-dimensional imaging of threading dislocations in GaN crystals using two-photon-excitation photoluminescence2018

    • Author(s)
      T. Tanikawa, K. Ohnishi, M. Kanoh, T. Mukai, T. Matsuoka
    • Journal Title

      Applied Physics Express

      Volume: 11 Issue: 3 Pages: 031004-031004

    • DOI

      10.7567/apex.11.031004

    • NAID

      210000136118

    • Related Report
      2017 Research-status Report
    • Peer Reviewed / Open Access
  • [Journal Article] Absolute Technique for Measuring Internal Electric Fields in InGaN/GaN Light-Emitting Diodes by Electroreflectance Applicable to All Crystal Orientations2017

    • Author(s)
      T. Tanikawa, K. Shojiki, R. Katayama, S. Kuboya, T. Matsuoka, Y.
    • Journal Title

      Applied Physics Express

      Volume: 10

    • NAID

      210000135940

    • Related Report
      2017 Research-status Report
    • Peer Reviewed
  • [Journal Article] Large Stokes-like shift in N-polar (000-1) InGaN/GaN multiple-quantum-well light-emitting diodes2016

    • Author(s)
      T. Tanikawa, K. Shojiki, S .Kuboya, R. Katayama, and T. Matsuoka
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 55 (5S) Issue: 5S Pages: 05FJ03-05FJ03

    • DOI

      10.7567/jjap.55.05fj03

    • Related Report
      2016 Research-status Report
    • Peer Reviewed
  • [Presentation] Evaluation of deep levels in N-polar GaN epitaxial layers by photo-current DLTS: An approach to reveal the self-compensation effect of Mg doping in p-type GaN2018

    • Author(s)
      H. Okamoto, H. Suzuki, R. Nonoda, and T. Tanikawa
    • Organizer
      4th Intensive Discussion on Growth of Nitride Semiconductors (IDGN-4)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Reverse-bias-induced virtual gate phenomenon in N-polar GaN HEMTs2018

    • Author(s)
      T. Suemitsu,Kiattiwut Prasertsuk,T. Tanikawa,T. Kimura,S. Kuboya,and T. Matsuoka
    • Organizer
      2018 MRS Fall Meeting
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Defect structure analysis of N-polar InGaN/GaN quantum-well structure2018

    • Author(s)
      T. Kiguchi, Y. Kodama, T. Shiraishi, T. J. Konno, and T. Tanikawa
    • Organizer
      International Workshop on Nitride Semiconductors (IWN2018)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] High-temperature carrier dynamics responsible for a non-radiative process in InGaN nanodisks fabricated by top-down nanotechnology2018

    • Author(s)
      Y. Chen,T. Kiba,J. Takayama,A. Higo,T. Tanikawa,S. Samukawa,and A. Murayama
    • Organizer
      12th International Conference on Excitonic and Photonic Processes in Condensed Matter and Nano Materials (EXCON 2018)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Influence of Self Absorption in Two-Photon-Excitation Photoluminescence of GaN2018

    • Author(s)
      T. Tanikawa,T. Fujita,K. Kojima,S. F. Chichibu,and T. Matsuoka
    • Organizer
      The 19th International Conference on Metalogranic Vapor Phase Epitaxy (ICMOVPE-XIX)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Growth of Indium-Including Nitride Semiconductors2018

    • Author(s)
      T. Matsuoka,S. Kuboya,and T. Tanikawa
    • Organizer
      The 19th International Conference on Metalogranic Vapor Phase Epitaxy (ICMOVPE-XIX)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Reverse bias annealing effects in N-polar GaN/AlGaN/GaN MIS-HEMTs2018

    • Author(s)
      T. Suemitsu, K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, and T. Matsuoka
    • Organizer
      Compound Semiconductor Week 2018
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] MOVPEによる窒素極性窒化物半導体成長2018

    • Author(s)
      松岡隆志,谷川智之,窪谷茂幸
    • Organizer
      第47回結晶成長国内会議 (JCCG-47)
    • Related Report
      2018 Annual Research Report
    • Invited
  • [Presentation] InGaN/GaNヘテロ構造のRF-MBE成長における格子緩和過程のその場観察:格子極性の影響2018

    • Author(s)
      谷川智之,山口智広,藤川誠司,佐々木拓生,高橋正光,松岡隆志
    • Organizer
      第47回結晶成長国内会議 (JCCG-47)
    • Related Report
      2018 Annual Research Report
  • [Presentation] 窒素極性GaN MIS-HEMTにおける逆バイアスアニールの効果2018

    • Author(s)
      末光哲也,Prasertsuk Kiattiwut,谷川智之,木村健司,窪谷茂幸,松岡隆志
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] MOVPE窒素極性成長による窒化物半導体の新展開2018

    • Author(s)
      松岡隆志,窪谷茂幸,谷川智之,加納聖也
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] N極性InGaN/GaN量子井戸構造における構造の不均一性2018

    • Author(s)
      木口賢紀,白石貴久,兒玉裕美子,今野豊彦,谷川智之
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] MOVPE Growth of N-polar GaN/AlGaN/GaN Inverted HEMT Structures and Their Electrical Properties2017

    • Author(s)
      K. Prasertsuk, T. Tanikawa, T. Kimura, A. Miura, S. Kuboya, T. Suemitsu, and T. Matsuoka
    • Organizer
      3rd Intensive Discussion on Growth of Nitride Semiconductor (IDGN-3)
    • Place of Presentation
      東北大学金属材料研究所
    • Year and Date
      2017-01-16
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research
  • [Presentation] 有機金属気相成長法によるN極性InGaNチャンネルHEMT構造の作製2017

    • Author(s)
      田中真二,プラスラットスック・キャッティウット,木村健司,谷川智之,末光哲也,松岡隆志
    • Organizer
      第134回東北大学金属材料研究所講演会
    • Related Report
      2017 Research-status Report
  • [Presentation] Reduction of gate leakage current in N-polar GaN metal-insulator-semiconductor high electron mobility transistors2017

    • Author(s)
      K. Prasertsuk, T. Tanikawa, T. Kimura, A. Miura, S. Kuboya, T. Suemitsu, and T. Matsuoka
    • Organizer
      2017 Annual Meeting of Excellent Graduate Schools for Materials Integration Center and Materials Science Center
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research
  • [Presentation] N-polar GaN/AlGaN/GaN MIS-HEMTs on sapphire substrates with small off-cut for flat interface by MOVPE2017

    • Author(s)
      K. Prasertsuk, T. Tanikawa, T. Kimuram T. Suemitsu, and T. Matsuoka
    • Organizer
      Compound Semiconductor Week 2017
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research
  • [Presentation] MOVPE Growth of N-polar GaN/AlxGa1-xN/GaN Heterostructure on Small Off-cut Substrate for Flat Interface2016

    • Author(s)
      K. Prasertsuk, S. Tanaka, T. Tanikawa, K. Shojiki, T. Kimura, A. Miura, R. Nonoda, F. Hemmi, S. Kuboya, R. Katayama, T. Suemitsu, and T. Matsuoka
    • Organizer
      Compound Semiconductor Week 2016
    • Place of Presentation
      富山国際会議場
    • Year and Date
      2016-06-26
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research
  • [Remarks] 松岡研究室

    • URL

      http://www.matsuoka-lab.imr.tohoku.ac.jp/

    • Related Report
      2016 Research-status Report

URL: 

Published: 2016-04-21   Modified: 2020-03-30  

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