Heavy-ion induced current in Tunnel FET
| Project/Area Number |
16K18094
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Nihon University |
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Principal Investigator |
WU Yan 日本大学, 理工学部, 助手 (80736455)
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| Research Collaborator |
IWANAMI Yuta
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| Project Period (FY) |
2016-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2017: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2016: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Keywords | TFET / 重イオン照射 / SOI構造 / 寄生バイポーラ効果 / ソフトエラー / Single event effect / SOI / Parasitic bipolar effect |
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| Outline of Final Research Achievements |
This study focused TFET as a radiation hardened device. The TFET has been developed to improve the sub-threshold slope, and is consisted by p-i-n type, as source-channel-drain region, with applying reverse bias. So it is expected that the radiation induced electrons and holes in channel region are drifted to drain and source, respectively, and that the parasitic bipolar effects can be reduced by TFET. We evaluated the heavy-ion induced transient current and collected charge in conventional FET and TFET, and also discussed the single event transient on TFET CMOS devices.
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Report
(3 results)
Research Products
(5 results)
