| Project/Area Number |
16K18096
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
Liu Jiangwei 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 独立研究者 (30732119)
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| Project Period (FY) |
2016-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2017: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2016: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
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| Keywords | ダイヤモンド / 電界効果トランジスタ / MOSFET / Diamond / triple-gate / multi-gate / fin-type / field-effect transistor / Triple-gate / Fin-type |
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| Outline of Final Research Achievements |
Excellent physical properties of semiconductor diamond make it a promising candidate for high-power and high-frequency electronic device. However, lack of large-area single-crystal diamond wafers hinders electronic devices for practical applications. This issue leads us to downscale diamond electronic devices. Triple-gate metal-oxide-semiconductor field-effect transistor (MOSFET) architecture offers a way to extend device downscaling and increase device output current. Here, we design and fabricate a hydrogenated diamond (H-diamond) triple-gate MOSFET. The triple-gate MOSFET’s output current is much higher than that of the planar-type device, and the on/off ratio and subthreshold swing are more than 10e8 and as low as 110 mV/dec, respectively. The fabrication of these H-diamond triple-gate MOSFETs will drive diamond electronic device development forward towards practical applications.
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