| Project/Area Number |
16K21061
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Device related chemistry
Electronic materials/Electric materials
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| Research Institution | Japan Advanced Institute of Science and Technology |
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Principal Investigator |
Sakai Heisuke 北陸先端科学技術大学院大学, 先端科学技術研究科, 助教 (30580401)
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| Project Period (FY) |
2016-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2017: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2016: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Keywords | 有機トランジスタ / 有機センサ / フレキシブルデバイス / 有機感圧センサ / 低電圧駆動 / 電子デバイス・機器 / 電子・電気材料 |
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| Outline of Final Research Achievements |
We developed a prototype of low-voltage pressure sensor by integrating an low-voltage operation organic field-effect transistor (OFET) and a sensing capacitor, which were fabricated by means of the solution process. Next, the piezoelectric polymer film was stacked onto the low-voltage OFET, and then the novel pressure sensor named Dual-gate OFET based pressure sensor was successfully fabricated. This device operated at 5 V and the change of the drain current as a function of pressure load was more than 2 order of magnitude. Then, we attempted to develop a flexible dual-gate OFET based pressure sensor. And the improvement of OFET performance was simultaneously addressed. Consequently, the pressure response of the device was successfully obtained at operation voltage of 3V.
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