Making the well-defined contacts between molecules and substrates in nm scale and their electronic properties
| Project/Area Number |
17069009
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| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
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| Allocation Type | Single-year Grants |
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| Review Section |
Science and Engineering
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| Research Institution | The University of Tokyo |
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Principal Investigator |
YOSHINOBU Jun The University of Tokyo, 物性研究所, 教授 (50202403)
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| Co-Investigator(Kenkyū-buntansha) |
YAMASHITA Yoshiyuki 東京大学, 物性研究所, 助手 (00302638)
YOSHIMOTO Shinya 東京大学, 物性研究所, 助教 (90507831)
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| Project Period (FY) |
2005 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥109,400,000 (Direct Cost: ¥109,400,000)
Fiscal Year 2009: ¥10,200,000 (Direct Cost: ¥10,200,000)
Fiscal Year 2008: ¥11,200,000 (Direct Cost: ¥11,200,000)
Fiscal Year 2007: ¥23,300,000 (Direct Cost: ¥23,300,000)
Fiscal Year 2006: ¥38,700,000 (Direct Cost: ¥38,700,000)
Fiscal Year 2005: ¥26,000,000 (Direct Cost: ¥26,000,000)
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| Keywords | 表面 / 分子 / 走査トンネル顕微鏡 / 電気伝導 / 吸着 / 光電子分光 / 赤外吸収分光 / シリコン / アルキル基 / 単層膜 / STS / トンネル物性 / STM / 電子エネルギー損失分光 / 走査型トンネル顕微鏡 / X線吸収分光 / X線発光分光 |
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| Research Abstract |
We have fabricated the well-defined molecule-substrate contact systems in nm scale and investigated the structural and electronic properties. We elucidated the mechanism of cycloaddition of alkene on Si(100)c(4x2). We have characterized the alkyl monolayer attached to the Si(111) surface using infrared absorption spectroscopy and investigated the electron transport properties using a mercury electrode. As a model system for a metal electrode in water, we investigated water adsorption on Rh(111). In addition, we investigated the adsorbed states and electronic properties of DBP-S and F4-TCNQ molecules on Cu(100). The weak interaction between cyclohexane and Rh(111) was studied using infrared absorption spectroscopy and elucidated the softening mechanism of CH stretching vibration.
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Report
(6 results)
Research Products
(65 results)
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[Journal Article] Direct Observation of Sitespecific Valence Electronic Structure at Interface: SiO2/Si Interface2006
Author(s)
Y. Yamashita, S. Yamamoto, K. Mukai, J. Yoshinobu, Y. Harada, T. Tokushima, T. Takeuchi, Y. Takata, S. Shin, K. Akagi,, S. Tsuneyuki
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Journal Title
Phys. Rev. B. 73
Pages: 45336-45336
Related Report
Peer Reviewed
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[Journal Article] Direct Observation of Site-specific Valence Electronic Structure at Interface : SiO_2/Si Interface2006
Author(s)
Y.Yamashita, S.Yamamoto, K.Mukai, J.Yoshinobu, Y.Harada, T.Tokushima, T.Takeuchi, Y.Takata, S.Shin, K.Akagi, S.Tsuneyuki
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Journal Title
Phys.Rev.B. 73
Pages: 45336-45336
Related Report
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