| Budget Amount *help |
¥86,450,000 (Direct Cost: ¥66,500,000、Indirect Cost: ¥19,950,000)
Fiscal Year 2009: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2008: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2007: ¥6,240,000 (Direct Cost: ¥4,800,000、Indirect Cost: ¥1,440,000)
Fiscal Year 2006: ¥15,860,000 (Direct Cost: ¥12,200,000、Indirect Cost: ¥3,660,000)
Fiscal Year 2005: ¥56,030,000 (Direct Cost: ¥43,100,000、Indirect Cost: ¥12,930,000)
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| Research Abstract |
AlGaN is becoming promising semiconductors for developing violet to deep-ultraviolet light emitting semiconductor devices. The AlGaN has a large optical gain to achieve the lasing in this spectral region, as if the AlGaN has anisotropic optical property. Then, the shortest lasing of 228.9nm was demonstrated, for the first time, at room temperature under optical pumping by our experiment. And, extremely promising result as highly doped p-type AlGaN was demonstrated by carbon-doped AlGaN grown by low-pressure metal organic vapor phase epitaxy. The maximum hall-concentration that we have achieved was 3x10^<18>[cm^<-3>].
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