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Development of high-performance InAs quantum cascade lasers

Research Project

Project/Area Number 17206029
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionTohoku University

Principal Investigator

OHNO Hideo  Tohoku University, Research Institute of Electrical Communication, Professor, 電気通信研究所, 教授 (00152215)

Co-Investigator(Kenkyū-buntansha) OHTANI Keita  Tohoku University, Research Institute of Electrical Communication, Research Associate, 電気通信研究所, 助手 (40333893)
Project Period (FY) 2005 – 2006
Project Status Completed (Fiscal Year 2006)
Budget Amount *help
¥36,140,000 (Direct Cost: ¥27,800,000、Indirect Cost: ¥8,340,000)
Fiscal Year 2006: ¥18,980,000 (Direct Cost: ¥14,600,000、Indirect Cost: ¥4,380,000)
Fiscal Year 2005: ¥17,160,000 (Direct Cost: ¥13,200,000、Indirect Cost: ¥3,960,000)
KeywordsQuantum-cascade laser / Intersubband transition / InAs / AlSb / THz / Mid-infrared / 量子カスケードレーザ
Research Abstract

In order to develop low-threshold current density, high-power and high-temperature quantum-cascade lasers (QCLs), we fabricated InAs-based QCLs by molecular beam epitaxy and investigated laser characteristics, especially their relationship with the band structure of an active region. The summary of the research results is as follows:
1、Low-threshold current density operation
We demonstrated low-threshold current density (0.4 kA/cm^2) operation at liquid-nitrogen temperature by employing InAs/Al_<0.2>Ga_<0.8>Sb superlattice active layers. The emission wavelength was 10 μm, which was in close agreement with the designed wavelength. This is among the lowest threshold current density of QCLs operating in the mid-infrared spectrum region.
2、Room-temperature operation
We demonstrated the room-temperature operation of InAs-based QCLs emitting at 8.9 μm. In order to decrease thermal carrier leakage from the active layer, a diagonal intersubband transition was used. The observed threshold current density at 300 K was 12.0 kA/cm^2 and maximum operation temperature was 305 K.
3.High-power operation
In order to increase the dynamic range of the operation current, a scheme to increase the doping concentration in the injection layers was employed. The observed room-temperature threshold current density was 4.0 kA/cm^2, which is the lowest threshold current density in InAs-based QCLs. We demonstrated the output optical peak power above 1 W at liquid-nitrogen temperature and 125 mW at room-temperature.
4.High-temperature operation
Structure dependence on optical gain coefficient and its influence on the maximum operation temperature were investigated. We found that the active layer which exhibits the maximum optical gain coefficient presents the highest operation temperature. The observed maximum operation temperature was +100 ℃, which is the highest operation temperature in InAs-based QCLs.

Report

(3 results)
  • 2006 Annual Research Report   Final Research Report Summary
  • 2005 Annual Research Report
  • Research Products

    (10 results)

All 2007 2006 2005

All Journal Article (9 results) Patent(Industrial Property Rights) (1 results)

  • [Journal Article] Room-temperature InAs/AlSb quantum-cascade laser operating at 8.9 μm2007

    • Author(s)
      K.Ohtani
    • Journal Title

      Electronics Letters Vol. 49、 No. 3

      Pages: 520-522

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Room-temperature InAs/AlSb quantum cascade laser operating at 8.9 μm2007

    • Author(s)
      K.Ohtani
    • Journal Title

      Electronics Letters Vol.49, No.3

      Pages: 520-522

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Room-temperature InAs/AlSb quantum-cascade laser operating at 8.9 μm2007

    • Author(s)
      K.Ohtani, K.Fujita, H.Ohno
    • Journal Title

      Electronics Letters Vol. 49, No. 3

      Pages: 520-522

    • Related Report
      2006 Annual Research Report
  • [Journal Article] InAs quantum cascade lasers based on coupled quantum well structures2005

    • Author(s)
      K.Ohtani
    • Journal Title

      Japanese Journal of Applied Physics Vol. 44, No. 4B

      Pages: 2572-2574

    • NAID

      10015704914

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Mid-infrared InAs/AlGaSb superlattice quantum cascade lasers2005

    • Author(s)
      K.Ohtani
    • Journal Title

      Applied Physics Letters Vol. 87

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] InAs quantum cascade lasers based on coupled quantum well structures2005

    • Author(s)
      K.Ohtani
    • Journal Title

      Japanese Journal of Applied Physics Vol.44, No.4B

      Pages: 2572-2574

    • NAID

      10015704914

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Mid-infrared InAs/AlGaSb superlattice quantum cascade lasers2005

    • Author(s)
      K.Ohtani
    • Journal Title

      Applied Physics Letters Vol.87

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Mid-infrared InAs/AlGaSb superlattice quantum cascade lasers2005

    • Author(s)
      K.Ohtani, K.Fujita, H.Ohno
    • Journal Title

      Applied Physics Letters 87

    • Related Report
      2005 Annual Research Report
  • [Journal Article] InAs quantum cascade lasers based on coupled quantum well structures2005

    • Author(s)
      K.Ohtani, K.Fujita, H.Ohno
    • Journal Title

      Japanese Journal of Applied Physics 44

      Pages: 2572-2574

    • NAID

      10015704914

    • Related Report
      2005 Annual Research Report
  • [Patent(Industrial Property Rights)] 量子カスケードレーザ2006

    • Inventor(s)
      森安嘉貴, 大野英男, 大谷啓太
    • Industrial Property Rights Holder
      森安嘉貴, 大野英男, 大谷啓太
    • Industrial Property Number
      2006-203239
    • Filing Date
      2006
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Annual Research Report 2006 Final Research Report Summary

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Published: 2005-04-01   Modified: 2016-04-21  

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