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Development of new high-speed electronic devices using 1D quantum structures

Research Project

Project/Area Number 17206031
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionWaseda University

Principal Investigator

HORIKOSHI , Yoshiji  Waseda University, 理工学術院, 教授 (60287985)

Co-Investigator(Kenkyū-buntansha) 大泊 巌 (大泊 厳)  早稲田大学, 理工学術院, 教授 (30063720)
三浦 道子  広島大学, 工学部, 教授 (70291482)
品田 賢宏  早稲田大学, 生命医療工学研究所, 講師 (30329099)
河原塚 篤  早稲田大学, 生命医療工学研究所, 講師 (40329082)
小野満 恒二  早稲田大学, 理工学術院, 助手 (30350466)
Co-Investigator(Renkei-kenkyūsha) OHDOMARI Iwao  早稲田大学, 理工学術院, 教授 (30063720)
MIURA Michiko  広島大学, 工学部, 教授 (70291482)
SHINADA Takahiro  早稲田大学, 高等研究所, 准教授 (30329099)
KAWAHARAZUKA Atsushi  早稲田大学, 高等研究所, 准教授 (40329082)
NISHINAGA Jiro  早稲田大学, 理工学術院, 助教 (90454058)
Project Period (FY) 2005 – 2008
Project Status Completed (Fiscal Year 2008)
Budget Amount *help
¥50,440,000 (Direct Cost: ¥38,800,000、Indirect Cost: ¥11,640,000)
Fiscal Year 2008: ¥5,720,000 (Direct Cost: ¥4,400,000、Indirect Cost: ¥1,320,000)
Fiscal Year 2007: ¥5,850,000 (Direct Cost: ¥4,500,000、Indirect Cost: ¥1,350,000)
Fiscal Year 2006: ¥13,650,000 (Direct Cost: ¥10,500,000、Indirect Cost: ¥3,150,000)
Fiscal Year 2005: ¥25,220,000 (Direct Cost: ¥19,400,000、Indirect Cost: ¥5,820,000)
Keywords分子線エピタキシー(MBE) / マイグレーション・エンハンストエピタキシー(MEE) / III-V族化合物半導体 / 半導体ナノ構造 / 弾道電子デバイス / フラーレン / MBE / MEE / バリスティック / 巨大磁気抵抗 / 高周波デバイス / 選択エピタキシャル成長 / ナノチャネル / 希薄磁性半導体
Research Abstract

半導体ナノ構造を駆使することにより、素子の高速化、低消費電力化実現のための研究を進めてきた。まず分子線エピタキシャル成長法により、結晶品質、および構造精度の高いナノ構造を製作するための選択エピタキシャル成長技術の確立、さらにナノスケールの精度を持つ反応性イオンエッチング技術の確立を行った。これによって弾道電子を用いたトランジスター、磁気抵抗効果デバイス、二次元フォトニック結晶など、種々のデバイス構造を試作し、所期の特性を確認した。

Report

(5 results)
  • 2008 Annual Research Report   Final Research Report ( PDF )
  • 2007 Annual Research Report
  • 2006 Annual Research Report
  • 2005 Annual Research Report
  • Research Products

    (84 results)

All 2009 2008 2007 2006 2005

All Journal Article (42 results) (of which Peer Reviewed: 25 results) Presentation (39 results) Book (2 results) Patent(Industrial Property Rights) (1 results)

  • [Journal Article] Effect of the MgO substrate on the growth of GaN2009

    • Author(s)
      R. Suzuki. A. Kawaharazuka., Y. Horikoshi
    • Journal Title

      J. Cryst. Growth 311

      Pages: 2021-2024

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Growth of GaN with warm ammonia by molecular beam epitaxy2009

    • Author(s)
      A. Kawaharazuka, T. Yoshizaki, K. H. PIoog, Y. Horikoshi
    • Journal Title

      J. Cryst. Growth 311

      Pages: 2025-2028

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] The effects of rapid thermal annealing of doubled quantum dots grown by molecular beam epitaxy2009

    • Author(s)
      S. Suraprapapioh, Y. M. Shen, Y. Fainman, Y. Horikoshi, C. W. Tu
    • Journal Title

      J. Cryst. Growth 311

      Pages: 1791-1794

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Crystallne and electrical characteristics of C60-doped GaAs films2009

    • Author(s)
      J. Nishinaga, T. Takada, T. Hayashi, Y. Horikoshi
    • Journal Title

      J. Cryst. Growth 311

      Pages: 2232-2235

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] RHEED intensity oscillation of C60 layer epitaxial growth2009

    • Author(s)
      J. Nishinaga, A. Kawaharazuka, Y. Horikoshi
    • Journal Title

      J. Cryst. Growth 311

      Pages: 2227-2231

    • NAID

      120001351265

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Investigation of C60 Epitaxial Growth Mechanism on GaAs Substrates2009

    • Author(s)
      J. Nishinaga, A. Kawaharazuka, Y. Horikoshi
    • Journal Title

      Jpn. J. Appl. Phys. 48

    • NAID

      120001351264

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Area selective epitaxy of GaAs by migration-enhanced epitaxy with As2 and As4 arsenic sources2008

    • Author(s)
      A. Kawaharazuka, I. Yoshiba, and Y. Horikoshi
    • Journal Title

      Appl. Surf. Sci. 255

      Pages: 737-739

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Area selective epitaxy of GaAs by migration-enhanced epitaxy with As2 and As4 arsenic sources2008

    • Author(s)
      A. Kawaharazuka, I. Yoshiba, Y. Horikoshi
    • Journal Title

      Appl. Surf. Sci. 255

      Pages: 737-739

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] RHEED intensity oscillations of C60 growth on GaAs substrates2008

    • Author(s)
      J. Nishinaga, A. Kawaharazuka, Y. Horikoshi
    • Journal Title

      Appl. Surf. Sci. 255

      Pages: 682-684

    • NAID

      120001351263

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] High resolution X-ray photoelectron speotrosoopy of beta gallium oxide films deposited by ultra high vacuum radio frequency magnetron sputtering2008

    • Author(s)
      T. Takeuohi, H. Ishikawa, N. Takeuchi, Y. Horikoshi
    • Journal Title

      Thin Solid Films 516

      Pages: 4593-4597

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Area-selective epitaxial growth of GaAs on GaAs (111)A substrates by Migration-Enhanced Epitaxy2007

    • Author(s)
      Uehara, T. Iwai, I. Yoshiba, and Y. Horikoshi
    • Journal Title

      Jpn. J. Appl. Phys 46

      Pages: 496-501

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Area selective growth of GaAs by migration-enhanced epitaxy2007

    • Author(s)
      Y. Horikoshi, T. Uehara, T. Iwai, and I. Yoshiba
    • Journal Title

      Phys. Stat. Sol. B 244

      Pages: 2697-2706

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Low-temperature transport and ferromagnetism in GaAs-based structures with Mn2007

    • Author(s)
      V.A.Kulbachinskii
    • Journal Title

      J.Exp.Theo.Phys. 105

      Pages: 170-173

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Area selective growth of GaAs by migration-enhanced epitaxy2007

    • Author(s)
      Y.Horikoshi
    • Journal Title

      Phys.Stat.Sol.B 244

      Pages: 2697-2706

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Amorphous CuxGa1-x0 Films Deposition by Ultrahigh Vacuum Radio Frequency Magnetron Sputtering2007

    • Author(s)
      H.Ishikawa
    • Journal Title

      Jpn.J.Appl.Phys 46

      Pages: 2527-2529

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Characteristics of multvalent impurity doped C60 films grown by MBE2007

    • Author(s)
      J.Nishinaga
    • Journal Title

      J.Crystal Growth 301-302

      Pages: 687-691

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Enhanced magnetization by modulated Mn delta doping in GaAs2007

    • Author(s)
      K.Yanagisawa
    • Journal Title

      J.Crysta Growth 301-302

      Pages: 634-637

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Be and Mg co-doping in GaN2007

    • Author(s)
      A.Kawaharazuka
    • Journal Title

      J.Crystal Growth 301-302

      Pages: 414-416

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] ZnO epitaxial films grown by flux-modulated RF-MBE2007

    • Author(s)
      K.Hirano
    • Journal Title

      J.Crystal Growth 301-302

      Pages: 370-372

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Characterization of heavily Sn-doped GaAs grown by migration-enhanced epitaxy2007

    • Author(s)
      T.Chavanapanee
    • Journal Title

      J.Crystal Growth 301-302

      Pages: 225-229

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Area selective epitaxy of GaAs with AlGaAs native oxide mask by molecular beam epitaxy2007

    • Author(s)
      I.Yoshiba
    • Journal Title

      J.Crystal Growth 301-302

      Pages: 190-193

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Transconductance enhancement of nanowire field-effect transistors by built-up stress induced during thermal oxidation2007

    • Author(s)
      A.Seike
    • Journal Title

      Appl.Phys.Lett 91

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Protein Adsorption on Self-Assembled Monolayers Induced by Surface Water Molecule2007

    • Author(s)
      Y.Kanari
    • Journal Title

      Jpn.J.Appl.Phys 46-98

      Pages: 6303-6308

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Strain Distribution around SiO2/Si Interface in Si Nanowires:A molecular Dynamics Study.2007

    • Author(s)
      H.Ohta
    • Journal Title

      Jpn.J.Appl.Phys 46

      Pages: 3277-3282

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Surface modification of silicon with single ion irradiation2007

    • Author(s)
      I.Ohdomari
    • Journal Title

      Appl.Surf.Sci 254

      Pages: 242-246

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Growth mechanism of GaAs microdisk structures by Area-Selective Epitaxy using Migration-Enhanced Epitaxy2007

    • Author(s)
      T.Iwai, T.Toda, T.Uehara, I.Yoshiba, Y.Horikoshi
    • Journal Title

      Jpn. J. Appl. Phys. 46

      Pages: 514-517

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Electrical and surface composition properties of phosphorus implantation in Mg-doped GaN2006

    • Author(s)
      K.T.Liu, Y.K.Su, R.W.Chuang, S.J.Chang, Y.Horikosh
    • Journal Title

      Microelectronics Journal Vol. 37(5)

      Pages: 417-420

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Transparent RuOx contacts on n-ZnO2006

    • Author(s)
      T.K.Lin, S.J.Chang, K.T.Lam, Y.S.Sun, Y.Horikoshi
    • Journal Title

      J. Electrochem. Soc. Vol. 153(7)

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Electrical and structural properties of heavily Ge-doped GaAs grown by molecular-beam epitaxy2006

    • Author(s)
      T.Chavanapranee, D.Ichiryu, Y.Horikoshi
    • Journal Title

      Jpn. J. Appl. Phys. Vol. 45(6A)

      Pages: 4921-4925

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Molecular beam epitaxial growth of ZnMgO/ZnO/ZnMgO single quantum well structure on Si(111) substrate2006

    • Author(s)
      M.Fujita, T.Kosaka, Y.Deesirapipat, Y.Horikoshi
    • Journal Title

      J. Vac. Sci. Technol. B. Vol. 24(3)

      Pages: 1668-1670

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Nanoscale selective area epitaxy of C60 crystals on GaAs by molecular beam epitaxy2006

    • Author(s)
      J.Nishinaga, T.Aihara, T.Toda, F.Matsutani, Y.Horikoshi
    • Journal Title

      J. Vac. Sci. Technol. B. Vol. 24(3)

      Pages: 1587-1590

    • NAID

      120001351262

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Heavily Sn-doped GaAs with abrupt doping profiles grown by migration-enhanced epitaxy at low temperatures2006

    • Author(s)
      T.Chavanapranee, Y.Horikoshi
    • Journal Title

      J. Appl. Phys. Vol. 100(5)

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Area-selective epitaxial growth of GaAs on GaAs(111)A substrates by Migration-Enhanced Epitaxy2006

    • Author(s)
      T.Uehara, T.Iwai, I.Yoshiba, Y.Horikoshi
    • Journal Title

      Jpn. J. Appl. Phys. 46

      Pages: 496-501

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Magnesium/nitrogen and beryllium/nitrogen coimplantation into GaN2005

    • Author(s)
      K.T.Liu, Y.K.Su, S.J.Chang, Y.Horikoshi
    • Journal Title

      J.Appl.Phys. 98

      Pages: 73702-73702

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Effects of MgO-buffer layer on the structural and optical properties of polycrystalline ZnO films grown on glass substrate2005

    • Author(s)
      Y.Deesirapipat, M.Fujita, M.Sasajima, C.Antarasena, Y.Horikoshi
    • Journal Title

      Jpn.J.Appl.Phys.PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44

      Pages: 5150-5155

    • Related Report
      2005 Annual Research Report
  • [Journal Article] C and N co-implantation in Be-doped GaN2005

    • Author(s)
      K.T.Liu, Y.K.Su, R.W.Chuang, S.J.Chang, Y.Horikoshi
    • Journal Title

      SEMICONDUCTOR SCIENCE AND TECHNOLOGY 20

      Pages: 740-744

    • Related Report
      2005 Annual Research Report
  • [Journal Article] ZnO MSM photodetectors with Ru contact electrodes2005

    • Author(s)
      T.K.Lin, S.J.Chang, Y.K.Su, B.R.Huang, M.Fujita, Y.Horikoshi
    • Journal Title

      J.Crystal Growth 281

      Pages: 513-517

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Spatially separated Mn and Be doping for high hole concentration in GaMnAs by using MEE2005

    • Author(s)
      K.Onomitsu, H.Fukui, T.Maeda, Y.Hirayama, Y.Horikoshi
    • Journal Title

      J.Cryst.Growth 278

      Pages: 699-703

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Mechanical and optical characteristics of Al-doped C60 films2005

    • Author(s)
      J.Nishinaga, T.Aihara, H.Yamagata, Y.Horikoshi
    • Journal Title

      J.Crystal Growth 278

      Pages: 633-637

    • NAID

      120001351261

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Molecular abeam epitaxial growth of hexagonal ZnMgO films on Si(111) substrates using thin MgO buffer Layer2005

    • Author(s)
      M.Fujita, M.Sasajima, Y.Deesirapipat, Y.Horikoshi
    • Journal Title

      J.Crystal Growth 278

      Pages: 293-298

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Crack-free ZnO layer growth on glass substrates by MgO-buffer Layer2005

    • Author(s)
      Y.Deesirapipat, C.Antarasena, M.Fujita, M.Sasajima, Y.Horikoshi
    • Journal Title

      Inst.Phys.Conf.Ser. 184

      Pages: 307-310

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Growth and UV-A sensor applications of MgCdS/ZnCdS superlattices2005

    • Author(s)
      M.Kobayashi, J.Ueno, M.Enami, S.Katsuta, A.Ichiba, Y.Horikoshi
    • Journal Title

      J.Crystal Growth 278

      Pages: 273-277

    • Related Report
      2005 Annual Research Report
  • [Presentation] GaAs結晶中へのC60ドーピングによる電子トラッピング効果2009

    • Author(s)
      西永慈郎, 林剛史, 菱田清, 堀越佳治
    • Organizer
      第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学
    • Related Report
      2008 Annual Research Report
  • [Presentation] 透過電子顕微鏡による多価金属・フラーレン複合体の構造解析2009

    • Author(s)
      西永慈郎, 杉本敬哉, 堀越佳治
    • Organizer
      第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学
    • Related Report
      2008 Annual Research Report
  • [Presentation] In-Plane構造デバイスの製作と電気的特性2009

    • Author(s)
      小松崎優治, 東千博, 京極智輝, 小野満恒二, 河原塚篤, 堀越佳治
    • Organizer
      第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学
    • Related Report
      2008 Annual Research Report
  • [Presentation] Ga203-SiO2界面電子状態の高分解XPSによる評価2009

    • Author(s)
      竹内登志男, 市村陽介, 杉本大輔, 堀越佳治
    • Organizer
      第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学
    • Related Report
      2008 Annual Research Report
  • [Presentation] 学生実験「太陽電池の光照射強度依存性」2009

    • Author(s)
      竹内登志男, 佐藤道夫, 西永慈郎, 河原塚篤, 堀越佳治
    • Organizer
      第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学
    • Related Report
      2008 Annual Research Report
  • [Presentation] Compound semiconductor nanostructures and their future applications2008

    • Author(s)
      Y. Horikoshi
    • Organizer
      International Workshop on Next Generation Electronics 2008 (IWNE 2008)
    • Place of Presentation
      Tainan, Taiwan
    • Related Report
      2008 Final Research Report
  • [Presentation] Nanotechnology; Yesterday, Today, and Tomorrow2008

    • Author(s)
      Y.Horikoshi
    • Organizer
      The 1st China Jiangsu Conference for International Technology Transfer & Commercialization
    • Place of Presentation
      Nanjing, China
    • Related Report
      2008 Final Research Report
  • [Presentation] Compound semiconductor nanostruotures and their future applications2008

    • Author(s)
      Y. Horikoshi
    • Organizer
      International Workshop on Next Generation Electronics 2008 (IWNE 2008)
    • Place of Presentation
      Tainan, Taiwan
    • Related Report
      2008 Annual Research Report
  • [Presentation] Nanoteohnology ; Yesterday, Today, and Tomorrow2008

    • Author(s)
      Y. Horikoshi
    • Organizer
      The 1st China Jiangsu Conference for International Technology Transfer & Commercialization
    • Place of Presentation
      Nanjing, China
    • Related Report
      2008 Annual Research Report
  • [Presentation] RHEED intensity oscillation of C60 growth on GaAs substrates2008

    • Author(s)
      J. Nishinaga, A. Kawaharazuka, Y. Horikoshi
    • Organizer
      15th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      Vancouver, Canada
    • Related Report
      2008 Annual Research Report
  • [Presentation] Crystalline and electrical characteristics of C60-doped GaAs films2008

    • Author(s)
      J. Nishinaga, T. Takada, T. Hayashi, Y. Horikoshi
    • Organizer
      15th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      Vancouver, Canada
    • Related Report
      2008 Annual Research Report
  • [Presentation] Growth of GaN with warm ammonia2008

    • Author(s)
      A. Kawaharazuka, T. Yoshizaki, K. H. PIoog, Y. Horikoshi
    • Organizer
      15th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      Vancouver, Canada
    • Related Report
      2008 Annual Research Report
  • [Presentation] Effect of the MgO substrate on the growth of GaN2008

    • Author(s)
      R. Suzuki, A. Kawaharazuka, Y. Horikoshi
    • Organizer
      15th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      Vancouver, Canada
    • Related Report
      2008 Annual Research Report
  • [Presentation] High resolution x-ray photoeleotron speotroscopy of beta-gallium oxide-based thin films deposited by ultrahigh vacuum radio frequency magnetron sputtering2008

    • Author(s)
      T. Takeuchi, N. Takeuchi, Y. lchimura, Y. Horikoshi
    • Organizer
      7th lnternational Conference on Coating on Glass and Plastics
    • Place of Presentation
      Eindhoven, Netherlands
    • Related Report
      2008 Annual Research Report
  • [Presentation] 化合物半導体Self-Switching Diodeの製作プロセスと特性2008

    • Author(s)
      小松崎優治, 東 干博, 京極智輝, 小野満恒二, 山口浩司, 堀越佳治
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学
    • Related Report
      2008 Annual Research Report
  • [Presentation] GaAs高指数面基板上C60結晶薄膜のX線回折測定2008

    • Author(s)
      西永慈郎, 林 剛史, 河原塚篤, 堀越佳治
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学
    • Related Report
      2008 Annual Research Report
  • [Presentation] RF-MBE法で成長したGaNの結晶性のドーピング効果2008

    • Author(s)
      吉田直人, 鈴木遼太郎, 河原塚篤, 堀越佳冶
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学
    • Related Report
      2008 Annual Research Report
  • [Presentation] NH3-MBE法によるGaN成長におけるNH3加熱の効果2008

    • Author(s)
      吉崎 忠
    • Organizer
      第55回応用物理学関係連合講演会
    • Place of Presentation
      日本大学
    • Related Report
      2007 Annual Research Report
  • [Presentation] RFマグネトロンスパッタリング法によるZnO結晶薄膜の作製とその結晶性評価2008

    • Author(s)
      市村 洋介
    • Organizer
      第55回応用物理学関係連合講演会
    • Place of Presentation
      日本大学
    • Related Report
      2007 Annual Research Report
  • [Presentation] RHEED強度振動によるGaAs(001)基板上C60結晶成長の解析2008

    • Author(s)
      西永 慈郎
    • Organizer
      第55回応用物理学関係連合講演会
    • Place of Presentation
      日本大学
    • Related Report
      2007 Annual Research Report
  • [Presentation] C60-doped GaAs薄膜の成長と結晶学的特性2008

    • Author(s)
      西永 慈郎
    • Organizer
      第55回応用物理学関係連合講演会
    • Place of Presentation
      日本大学
    • Related Report
      2007 Annual Research Report
  • [Presentation] MBE growth of ZnO by using RF plasma-activated oxygen and ozone as oxygen sources2007

    • Author(s)
      Y. Horikoshi
    • Organizer
      International Workshop on Widegap Semiconductors
    • Place of Presentation
      National Cheng Kung University, Taiwan
    • Related Report
      2008 Final Research Report
  • [Presentation] MBE growth of ZnO by using RF plasma-activated oxygen and ozone as oxygen sources2007

    • Author(s)
      Y. Horikoshi
    • Organizer
      International Workshop on Widegap Semiconductors
    • Place of Presentation
      Taiwan
    • Related Report
      2007 Annual Research Report
  • [Presentation] RHEED intensity oscillations of C60 growth2007

    • Author(s)
      J. Nishinaga
    • Organizer
      11th International Conference on the Formation of Semiconductor Interfaces
    • Place of Presentation
      Brazil
    • Related Report
      2007 Annual Research Report
  • [Presentation] Area selective epitaxy of GaAs by migratien-enhanced epitaxy with As2 and As4 arsenic sorces2007

    • Author(s)
      A. Kawaharazuka
    • Organizer
      11th International Conference on the Formation of Semiconductor Interfaces
    • Place of Presentation
      Brazil
    • Related Report
      2007 Annual Research Report
  • [Presentation] RFマグネトロンスパッタリング法によるCuGaO2結晶薄膜の作製と子の物性評価2007

    • Author(s)
      竹内 史和
    • Organizer
      第68回応用物理学会学術講演会
    • Place of Presentation
      北海道工業大学
    • Related Report
      2007 Annual Research Report
  • [Presentation] 化合物半導体Self-Switching Diodeにおける製聾プロセスの検討2007

    • Author(s)
      小松崎 優治
    • Organizer
      第68回応用物理学会学術講演会
    • Place of Presentation
      北海道工業大学
    • Related Report
      2007 Annual Research Report
  • [Presentation] オゾンソースMBE法によるa面サファイア基板上のZnO結晶成長2007

    • Author(s)
      大西 潤哉
    • Organizer
      第68回応用物理学会学術講演会
    • Place of Presentation
      北海道工業大学
    • Related Report
      2007 Annual Research Report
  • [Presentation] MEE法によるGaAs撰択成長におけるAs分子種の効果2007

    • Author(s)
      河原 塚篤
    • Organizer
      第68回応用物理学会学術講演会
    • Place of Presentation
      北海道工業大学
    • Related Report
      2007 Annual Research Report
  • [Presentation] MBE法によるGaAs(111)A基板上へのInAs薄膜成長と電気的特性2007

    • Author(s)
      原田 亮平
    • Organizer
      第68回応用物理学会学術講演会
    • Place of Presentation
      北海道工業大学
    • Related Report
      2007 Annual Research Report
  • [Presentation] RF-MBE法によるBe,Mg空間分離ドープp型GaNの成長2007

    • Author(s)
      長井 健一郎
    • Organizer
      第68回応用物理学会学術講演会
    • Place of Presentation
      北海道工業大学
    • Related Report
      2007 Annual Research Report
  • [Presentation] A New Kinetic Equation for Thermal Oxidation of Silicon Replacing the Deal-Grove Equation2007

    • Author(s)
      T. Watanabe
    • Organizer
      9th International Symposium on Silicon Nitride,Silicon Dioxide Thin Insulating Films and Emerging Dielectrics
    • Place of Presentation
      Chicago,USA
    • Related Report
      2007 Annual Research Report
  • [Presentation] nm-scale modification of solid surfaces for novel function creation2007

    • Author(s)
      I. Ohdomari
    • Organizer
      11th International conference on the Formation of Semiconductor Interfaces
    • Place of Presentation
      Brazil
    • Related Report
      2007 Annual Research Report
  • [Presentation] Prospects for Regeneration of Si Technology2007

    • Author(s)
      I. Ohdomari
    • Organizer
      9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
    • Place of Presentation
      Tokyo,Japan
    • Related Report
      2007 Annual Research Report
  • [Presentation] General Kinetic Theory for Thermal Oxidation of Silicon2007

    • Author(s)
      T. Watanabe
    • Organizer
      9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
    • Place of Presentation
      Tokyo,Japan
    • Related Report
      2007 Annual Research Report
  • [Presentation] Interface Structure of an Organosilane Monolayer/SiO2 Substrate; a Grand Canonical Monte Carlo Simulation Study2007

    • Author(s)
      H. Yamamoto
    • Organizer
      9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
    • Place of Presentation
      Tokyo,Japan
    • Related Report
      2007 Annual Research Report
  • [Presentation] Selectivity improvement in protein patterning with hydroxy-terminated self-assembled monoiayer template2007

    • Author(s)
      T. Miyake
    • Organizer
      9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
    • Place of Presentation
      Tokyo,Japan
    • Related Report
      2007 Annual Research Report
  • [Presentation] Optimization of Zero-Mode Waveguide for Single Molecule imaging by Computational Optics Simulation2007

    • Author(s)
      R. Akahori
    • Organizer
      9th Internationa.Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
    • Place of Presentation
      Tokyo,Japan
    • Related Report
      2007 Annual Research Report
  • [Presentation] Fabrication of High-Density Nanoetchpit Array by Eiectron Beam LithograPhy Using Alkylsilane Monolayer Resist2007

    • Author(s)
      M. Nakamoto
    • Organizer
      9th International Conference on Atomically Controlled Surfaces, interfaces and Nanostructures
    • Place of Presentation
      Tokyo,Japan
    • Related Report
      2007 Annual Research Report
  • [Book] "Epitaxial growth of undoped and multivalent impurity-doped C60 films by molecular beam epitaxy", Progress in Fullerene Research2007

    • Author(s)
      J. Nishinaga and Y. Horikoshi(分担執筆)
    • Publisher
      Nova Science Publishers
    • Related Report
      2008 Final Research Report
  • [Book] Progress in Fullerene Research2007

    • Author(s)
      J.Nishinaga, Y.Horikoshi
    • Total Pages
      21
    • Publisher
      Nova Science Publishers
    • Related Report
      2007 Annual Research Report
  • [Patent(Industrial Property Rights)] 半導体における不純物ドーピング法2007

    • Inventor(s)
      堀越佳治,河原塚篤,田辺達也,中西文毅,森大樹
    • Industrial Property Rights Holder
      住友電気工業(株)
    • Industrial Property Number
      2007-024659
    • Filing Date
      2007-02-02
    • Related Report
      2008 Final Research Report

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Published: 2005-04-01   Modified: 2016-04-21  

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