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Direct production of silicon crystals for solar cells from the melt of silicon alloys using self-shape maintaining characteristics of a crystal

Research Project

Project/Area Number 17206072
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Material processing/treatments
Research InstitutionThe University of Tokyo

Principal Investigator

SUZUKI Toshio  The University of Tokyo, Graduate School of Engineering, Professor (70115111)

Co-Investigator(Kenkyū-buntansha) MORITA Kazuki  Institute of Industry Science, 生産技術研究所御, 教授 (00210170)
IKEDA Minoru  The University of Tokyo, Graduate School of Engineering, Research assistant (50167243)
SHIBUTA Yasushi  The University of Tokyo, Graduate School of Engineering, Assistant Professor (90401124)
Project Period (FY) 2005 – 2007
Project Status Completed (Fiscal Year 2007)
Budget Amount *help
¥48,750,000 (Direct Cost: ¥37,500,000、Indirect Cost: ¥11,250,000)
Fiscal Year 2007: ¥7,930,000 (Direct Cost: ¥6,100,000、Indirect Cost: ¥1,830,000)
Fiscal Year 2006: ¥20,930,000 (Direct Cost: ¥16,100,000、Indirect Cost: ¥4,830,000)
Fiscal Year 2005: ¥19,890,000 (Direct Cost: ¥15,300,000、Indirect Cost: ¥4,590,000)
Keywordssilicon / solar cell / crystal growth / 融液成長 / フェーズフィールドモデル / フェーズフイールドモデル
Research Abstract

The research was aimed to demonstrate the possibility of the new production process of plate or rod silicon crystals by crystal pulling from the melt of silicon-based alloys, which would be conducted at low temperature and need less energy consumption than usual processes. As model experiments, the crystal pulling was performed using Si-45wt%Ni alloy. The preferred orientation for silicon crystal growth at low undercooling was a <211> crystallographic direction and a seed crystal plate with a <211> direction was used in the experiments. When the melt was undercooled, facet dendrites grew along the free surface of the melt and thus it was difficult to grow a plate silicon crystal. When the melt was slightly superheated, silicon crystals epitaxially grown to the seed crystal were successfully pulled up under the conditions of superheating from one to five degrees Celsius and pulling velocity under 0.015 mm per minute. The obtained crystals were classified into three types of needle-, rod- and corn-shape-crystal in their shapes. Some of needle- and rod-crystals contained Si-Ni eutectics inside. The temperature distribution estimated in the seed and the growing crystal showed that the crystal was grown in thermally steady state. The wetting behavior of the melt to the crystal played an important role for the stable crystal pulling. The examination of the growth condition in detail showed that a silicon multi-crystal was stably grown in the range of growth velocity under 0.03 mm per minute. From the crystallographic examination revealed the re-entrant corner mechanism was dominant in the crystal pulling process. It was concluded that the crystal pulling from the melt of silicon-based alloys was practically possible. It was also suggested that a new solar cell system would be possible by combining a rod-crystal and a parabolic mirror.

Report

(4 results)
  • 2007 Annual Research Report   Final Research Report Summary
  • 2006 Annual Research Report
  • 2005 Annual Research Report
  • Research Products

    (12 results)

All 2008 2007 2006 2005

All Journal Article (10 results) (of which Peer Reviewed: 4 results) Presentation (2 results)

  • [Journal Article] TWo-dimensional facet clystal growth of silicon from undercooled melt of Si-Ni alloy2007

    • Author(s)
      T. Suzuki, S. G Kim, W. T. Kim
    • Journal Title

      Mater. Sci. Eng. A 449-451

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Faceted Crystal Growth of Silicon from Undercooled Melt of Si-20mass%Ni Alloy2007

    • Author(s)
      T. Takazawa, M. Ikeda, T. Suzuki
    • Journal Title

      Materials Transactions 48

    • NAID

      10019853113

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Annual Research Report 2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Two-dimensional facet crystal growth of silicon from undercooled melt of Si-Ni alloy2007

    • Author(s)
      T. Suzuki, S. G. Kim, W. T. Kim
    • Journal Title

      Mater. Sci. Eng. A Vol.449-451

      Pages: 99-104

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Faceted Crystal Growth of Silicon from Undercooled Melt of Si-20mass%Ni Alloy2007

    • Author(s)
      T. Takazawa, M. Ikeda, T. Suzuki
    • Journal Title

      Materials Transactions Vol.48

      Pages: 2285-2288

    • NAID

      10019853113

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] Two-dimensional facet crystal growth of silicon from undercooled melt of Si-Ni alloy2007

    • Author(s)
      T. Suzuki, S. G. Kim, W. T. Kim
    • Journal Title

      Mater. Sci. Eng. A 449-451

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Two-dimensional facel crystal growth of silicon from undercooled melt of Si-Ni alloy2007

    • Author(s)
      T.Suzuki, S.G.Kim, W.T.Kim
    • Journal Title

      Materials Science and Engineering A 449-451

      Pages: 99-104

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Solidification Refining of Si at Low Temperature Utilizing the Si-Al Solvent2006

    • Author(s)
      吉川健, 森田一樹
    • Journal Title

      溶融塩及び高温化学 49

      Pages: 135-143

    • Related Report
      2006 Annual Research Report
  • [Journal Article] ランダムウォークアルゴリズムを用いたフェーズフィールド解析の高速化2005

    • Author(s)
      小口かなえ, 鈴木俊夫
    • Journal Title

      日本金属学会誌 69

    • NAID

      130004455636

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Final Research Report Summary
    • Peer Reviewed
  • [Journal Article] Improvement of computational efficiency in phase-field simulations By using a random-walk algorism2005

    • Author(s)
      K. Oguchi, T. Suzuki
    • Journal Title

      J. Japan Inst. Metals Vol.69

      Pages: 801-803

    • NAID

      130004455636

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary
  • [Journal Article] ランダムウォークアルゴリズムを用いたフェーズフィールド解析の高速化2005

    • Author(s)
      小口かなえ, 鈴木俊夫
    • Journal Title

      日本金属学会誌 69・8

      Pages: 801-803

    • NAID

      130004455636

    • Related Report
      2005 Annual Research Report
  • [Presentation] Si-Ni合金融液からの単結晶シリコンロッド育成2008

    • Author(s)
      小山琢実、池田実、鈴木俊夫
    • Organizer
      (社)日本鉄鋼協会第155回春期講演大会
    • Place of Presentation
      武蔵工業大学
    • Year and Date
      2008-03-27
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2007 Annual Research Report 2007 Final Research Report Summary
  • [Presentation] Growth of silicon single crystal rod from the melt of Si-Ni alloy2007

    • Author(s)
      T. Koyama, M. Ikeda, T. Suzuki
    • Organizer
      155th Spring Meeting, Iron and Steel Institute of Japan
    • Place of Presentation
      Musashi Insitute of Technology
    • Year and Date
      2007-03-03
    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2007 Final Research Report Summary

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Published: 2005-04-01   Modified: 2016-04-21  

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